Current optical space telescopes rely upon silicon Charge Coupled Devices
(CCDs) to detect and image the incoming photons. The performance of a CCD
detector depends on its ability to transfer electrons through the silicon
efficiently, so that the signal from every pixel may be read out through a
single amplifier. This process of electron transfer is highly susceptible to
the effects of solar proton damage (or non-ionizing radiation damage). This is
because charged particles passing through the CCD displace silicon atoms,
introducing energy levels into the semi-conductor bandgap which act as
localized electron traps. The reduction in Charge Transfer Efficiency (CTE)
leads to signal loss and image smearing. The European Space Agency's
astrometric Gaia mission will make extensive use of CCDs to create the most
complete and accurate stereoscopic map to date of the Milky Way. In the context
of the Gaia mission CTE is referred to with the complementary quantity Charge
Transfer Inefficiency (CTI = 1-CTE). CTI is an extremely important issue that
threatens Gaia's performances. We present here a detailed Monte Carlo model
which has been developed to simulate the operation of a damaged CCD at the
pixel electrode level. This model implements a new approach to both the charge
density distribution within a pixel and the charge capture and release
probabilities, which allows the reproduction of CTI effects on a variety of
measurements for a large signal level range in particular for signals of the
order of a few electrons. A running version of the model as well as a brief
documentation and a few examples are readily available at
http://www.strw.leidenuniv.nl/~prodhomme/cemga.php as part of the CEMGA java
package (CTI Effects Models for Gaia).Comment: Accepted by MNRAS on 13 February 2011. 15 pages, 7 figures and 5
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