BABA Akira

GOTO Takashi

HIRAI Toshio

MASUDA Yoichiro

MASUMOTO Hiroshi

English

MASUDA, Yoichiro

増田, 陽一郎

マスダ, ヨウイチロウ

増本, 博

3114

マスモト, ヒロシ

MASUMOTO, Hiroshi

馬場, 明

2563

ババ, アキラ

BABA, Akira

後藤, 孝

3115

ゴトウ, タカシ

GOTO, Takashi

平井, 敏雄

3116

ヒライ, トシオ

HIRAI, Toshio

Hachinohe Institute of Technology Repository / 八戸工業大学学術リポジトリ

Tungsten―Bronze Ba2]NaNb5015 and Layer一StructuredBi4Ti3012 Ferroelectric Thin Fil■lsYoichiro MASUDAホI,HiroshiruASUMOTO・2,Akira BABAキ1,Takashi GOTO・2,AND Toshio HIRAIホ2AbstractPolycrystanine and epitaxial ttllns of a layer―structured erroel ctric Bi4Ti3012(BIT)inperovskite phase and tungsten―bronze typed Ba2NaNbs015(BNN)have been deposited onsapphire and aluHina substrates by ECR plasma and RF magnetron sputtering using a sinteredceramic target.The substrate temperature higher than 550℃was necessav to grow BIT ilmsin the perOvskite phase without post themal anneahng  BIT■llns、vere epitaxiany gr。、vn oC,A and R surfaces of a sapphire single crystal. The deposition ratio of BNN Iilm(Ba:Na:Nb)depended on the sputtering gas pressure  The dielectric,ferroelectric and optical propertiesOf these■llns are discussedINTRODUCT10NRecently,considerable attention has been centered on the development in Filln technologiesof ferroelectric materials for many useful electronic and optical devices such as opticalmemory,display,non linear,DRAM and nonv01atile memOry devices(FRAM),beCause thesematerials have excenent dielectric, piezoelectric and optical prOperties.  Presently, severalattempts have been lnade to forln layer structured ferroelectric Bi4Ti3012(BIT)and tungstenbronze typed ferroelectric Ba2NaNb5015(BNN)thin 11lnュs by ECR and RF planar magnetronsputtering using a ceramic target.  So far many electrical properties of the modined hot_forging BIT cera■lics h ve been mainly studied.1) It is known that RF sputtering enables theepitaxial gro、vth f BIT illn on single crystanine、/1 O substr tes and the preferred orientationis c―axis on Si substrates2,9,4).  The present paper describes the epitaxial groヽアヽ h of BIT王1llnson sapphire substrates by the ECR plasma sputtering,deposition of BNN filris on Pt/A1203substrates by the RF magnetrOn sputtering method and dielectric, ferroelectric, optical andcrystanographiC properties,EXPERIMENTAL PROCEDUREAn electron cyclotron resonance(ECR)plasma sputtering apparatus(SunlitOmo WIetal平成5年10月15日受理事1八戸工業大学 教授Ⅲl八戸工業大学電気工学科Ⅲ2東北大学金属材料研究所中2東北大学金属材料研究所牟2東北大学金属材料研究所技師補助手助教授教授―- 17 -―

Tungsten-Bronze Ba2NaNb5O15 and Layer-Structured Bi4Ti3O12 Ferroelectric Thin Films

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Tungsten-Bronze Ba2NaNb5O15 and Layer-Structured Bi4Ti3O12 Ferroelectric Thin Films

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Hachinohe Institute of Technology Repository / 八戸工業大学学術リポジトリ