MASUDA Yoichiro

English

MASUDA, Yoichiro

増田, 陽一郎

マスダ, ヨウイチロウ

Hachinohe Institute of Technology Repository / 八戸工業大学学術リポジトリ

Preparation and Ferroelectric Propertiesof Pb(Zr,Ti)03 Films bySol―Gel PrOcessingYoichiroよ′生ASUDAAbstractPb(ZrゎTil_x)03(PZT)11lms were prepared on Ni metal plates by the sol gel process usingrapid thermal annealing(RTA) The PZT ilnis were investigated by X―ray dirractio (XRD),X―ray photoelectron spectroscopy(XPS)and electron probe micro analysis(EPMA) Theelectrical properties such as dielectric constant,remanent polarization,coercive Field and leak―age current were measured for PZT ilm with Zr/Ti ratiO(70/30,50/50)on Ni metal substratesAs the PZT Filrns are treated in PbO atmOsphere at 750°C for lh,the dielectric cOnstant andremanent polarizatiOn increased  This result can be explained by the fact that the increase inferrOelectricity Of the PZT I11ln is caused by the electric polarizability of lead iOnIntroductionFerrOelectric nllns are currently investigated as highly potential rnaterials fOr apphcationsto micro devices such as capacitor for dynamic random access memory(DRAM),non―volatilerandom access memory(NVRAM),self learning metal ferroelectric semicOnductor(MFS)andmany kinds of sensOr  ]ヽfany kinds of preparation techniques to forni ferroelectric lillns havebeen reported,such as sputteringl,2,3),metal organic chemical vapor depositiOn(ⅣIOCVD)4,5,6),laser ablation and7,8)sol_gel processing9'10).  In this study,覇πe Ⅵr  report the processing of thesol―gel rnethod using rapid thermal annealing(RTA)and crystal and electrical characteriza‐tions for lead zirconate titanate(PZT)nllns fabricated by the sol―gel rnethOdExperimental ProcedureLead zirconate titanate(PZT)ilms having four kinds atomic ratios for P/Z/T aS 100/50/50,100/70/30,115/50/50 and l15/70/30、vere synthesized.  Figure l iHustrates the preparationof precursor solution and PZT nlln using a sOl―gel process. Lead acetate Pb(CI13COO)2・31120(KantO Chemical Co lnc,99%),zirconyl nitrate ZrO(N03)22H20(Kanto Chemical CO.Inc99%)titanium tetra―n―butoxide,monomer(C4H90)4Ti(KantO Chemical Co.inc,97%)wereused as raw materials_  Acetic acid CH9C00H and  distilled 、vater 、vere used as solven s.Triethylene glycol C6H1404 MraS used as an additive in Order tO prevent cracking and tO increasesurface smoothness of the nlm.  Experilnental steps involved in the preparation are as fomows平成7年10月16日受理電気工学科・教授-12-

Preparation and Ferroelectric Properties of Pb(Zr,Ti)O3 Films by Sol-Gel Processing

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Preparation and Ferroelectric Properties of Pb(Zr,Ti)O3 Films by Sol-Gel Processing

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