Resonant tunneling controlled by laser and constant electric fields

Abstract

We develop the concept of scattering matrix and we use it to perform stable numerical calculations of resonant tunneling of electrons through a multiple potential barrier in a semiconductor heterostructure. Electrons move in two external nonperturbative electric fields: constant and oscillating in time. We apply our algorithm for different strengths and spatial configurations of the fields.Comment: 10 pages, 11 figure