'Institute of Electrical and Electronics Engineers (IEEE)'
Doi
Abstract
The total-ionizing-dose (TID) radiation tolerance of CMOS temperature sensors is generally limited by the radiation-introduced leakage current in diodes. A dynamic base leakage compensation technique is employed to improve the radiation hardness of the CMOS temperature sensor. The fabricated temperature sensor achieves an accuracy of ±1.7°C from -40°C to 125°C, while the power and area consumption are only 56 μW and 0.07 mm2, respectively. The temperature sensor is assessed with a gamma irradiation experiment with a dose rate of 1 kGy/h, and radiation induced temperature readout drifts are smaller than 0.2% after 1 MGy.status: publishe