Intra-grain and oligo-grain top-contact organic thin film transistors

Abstract

The properties of intra-grain and oligo-grain transistors without influencing film growth and with little contact effects were studied. Intra-grain devices enabled to extract the intrinsic charge-carrier mobility. Results of organic thin film transistors (OTFT) showed that for small channel lengths, grain boundary barriers were found to dominate the output characteristics of OTFT.status: publishe