Hansen, Thor-Erik

Hansen, Trond Andreas

Jensen, Geir Uri

Kok, Angela

Lietaer, Nicolas

Mielnik, Michal Marek

storås, Preben

English

SINTEF Open

1ICTATLAS meeting 09.01, 2009T. E. Hansen, A. Kok, T. A. Hansen, N. Lietaer,           M. Mielnik, P. Storås, G. U. JensenNext lot of 3-D detectors at SINTEF2ICTSINTEF 3D - 3E0,000,200,400,600,801,001,201,401,601,802,000 10 20 30 40 50 60 70 80Reverse bias (V)Leakage current per pixel (nA)ALTAS 3E chip – average pixel leakage current      calculated from measurement of total leakage current – 2700 pixels3ICTALTAS 4E chip – average pixel leakage current      calculated from measurement of total leakage current – 2700 pixels            4 different chipsSINTEF 3D Prototype0,001,002,003,004,005,000 20 40 60 80 100V Reverse biasnADetector 21Detector 28Detector 42Detector 484ICTInter pixel / strip resistanceMeasured between n-electrodes in neighbouring pixels/strips at 60 V  4E structures: 100-300 MΩ3E structures: 300-500 MΩ2E structures: 600-800 MΩBaby strip:   6.0 - 6.5  GΩ5ICTHit map recorded with SINTEF bump bonded 3D –detector. Americium source6ICTdepletion layerdepletion layerp-active edge p-spray n-electrode p-electrodedepletion layerp-sprayn-substratesaw linedepletion layerp-active edge p-spray n-electrode p-electrodedepletion layerp-sprayp-substratesaw lineWhy n-readout 3D- detectors made on p-substrates are more robustn-substratep-substrate7ICTSecond 3D-run at SINTEFN - readout devices on p-wafers. P-doped active edge acts as depletion stop and not part of pn-junction. More robust!Wafer specifications1. Based on experiences from first run focus on Reduce wafer stress and bow to improve lithography and reduce breakage  Improve on topography2. New AMS 200 ISPEEDER to be used for DRIE etching3. Mask design completed including ATLAS, CMS and Medipix type devices. Processing in progress≥ 10000 Ωcm≤ 12 V≤ 6 V≤ 3.5 V285 µm, 6 pcs2E3E4E200 µm, 17 pcsDepl. Voltage4 - inch8ICTTuning of AMS 200 ISPEEDER “IPROD” for next SINTEF 3D – run14 µm holes through 320 µm thick wafer  bonded to support wafer in 40 min etch timeEtch stop against oxide with no notching14 µm hole320 µm wafersupport waferDetail at bottomEtch stop    at oxide with no notching  9ICTFurther tuning of AMS 200 ISPEEDER “IPROD”after installing high selectivity kit                           Etching Si with ≈1000 selectivity to SiO214 µm holes, 200 and 320 µm deep200 µm deep holeNo problem at wafer edge due to high Si to SiO2 selectivity 320 µm deep holeStill need manual manual protection with photo resist to keep Al mask at edge for protection.10ICTMASK LAYOUT FOR 2nd RUN                              Photo masks ordered November 12, 2008 1E, 2E, 3E, 4E, 5E test structuresMedipix chipsATLAS 1E, 2E, 3E, 4E, 5E chipsCMS type structures, 14.6 % of wafer areaAtlas FE- I chips  2E configuration

Next lot of 3-D detectors at SINTEF

https://sintef.brage.unit.no/sintef-xmlui/bitstream/11250/2429684/2/SINTEF%2bS13876.pdf

Next lot of 3-D detectors at SINTEF

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