В  данной работе было проведено моделирование основных параметров 
солнечных элементов, таких как: напряжение холостого хода Voc, плотность 
тока короткого замыкания Jsc, фактор заполнения FF, коэффициент полезного 
действия (КПД) солнечных элементов на основе гетеропереходов ZnTe/CdSe 
и  ZnSe/CdSe, в зависимости от внешних условий: эксплуатационная 
температура, толщины поглощающего и оконного слоев. Были найдены 
начальные характеристики для получения солнечных элементов с оптимальной 
эффективностью преобразования энергии светового излучения.
При цитуванні документа, використовуйте посилання http://essuir.sumdu.edu.ua/handle/123456789/32602In this paper a modeling of the main working parameters, such as: open-circuit 
voltage Voc, short-circuit current density Jsc, fill factor FF, efficiency h of solar cells 
based on ZnTe/CdSe and ZnSe/CdSe hetero-junctions (HJ) depend on the external 
conditions: operation temperature, absorption and window layers thickness. Were determined a basic parameters for obtaining solar cells with  optimal efficiency of 
light irradiation conversion.
При цитировании документа, используйте ссылку http://essuir.sumdu.edu.ua/handle/123456789/3260

Ivashchenko, Maksym Mykolaiovych

Opanasiuk, Anatolii Serhiiovych

Иващенко, Максим Николаевич

Опанасюк, Анатолий Сергеевич

Опанасюк, Анатолій Сергійович

Іващенко, Максим Миколайович

Electronic Sumy State University Institutional Repository

SWorld – 1-12 October  2013 http://www.sworld.com.ua/index.php/ru/conference/the-content-of-conferences/archives-of-individual-conferences/oct-2013 SCIENTIFIC RESEARCH AND THEIR PRACTICAL APPLICATIO N. MO DERN STATE AND WAYS O F DEVELO PMENT ‘2013 Доклад/Физика и математика – Физика, механика и астрономия УДК 538.975 Иващенко М.Н., Опанасюк А.С. МОДЕЛИРОВАНИЕ ОСНОВНЫХ ЭКСПЛУАТАЦИОННЫХ ХАРАКТЕРИСТИК СОЛНЕЧНЫХ ЭЛЕМЕНТОВ НА ОСНОВЕ ГЕТЕРОПЕРЕХОДОВ ZnTe/CdSe И ZnSe/CdSe Сумский государственный университет,  Сумы, Римского-Корсакова 2, 40007  UDC 538.975 Ivashchenko M.M., Opanasyuk A.S. MODELING OF THE MAIN WORKING PARAMETERS OF SOLAR CELLS BASED ON ZnTe/CdSe AND ZnSe/CdSe HETEROJUNCTIONS Sumy State University, Sumy, Rimsky-Korsakov 2, 40007  В данной работе было проведено моделирование основных параметров солнечных элементов, таких как: напряжение холостого хода Voc, плотность тока короткого замыкания Jsc, фактор заполнения FF, коэффициент полезного действия (КПД) h  солнечных элементов на основе гетеропереходов ZnTe/CdSe и ZnSe/CdSe, в зависимости от внешних условий: эксплуатационная температура, толщины поглощающего и оконного слоев. Были найдены начальные характеристики для получения солнечных элементов с оптимальной эффективностью преобразования энергии светового излучения.    Ключевые слова: солнечный элемент, SCAPS-1D, коэффициент полезного действия. In this paper a modeling of the main working parameters, such as: open-circuit voltage Voc, short-circuit current density Jsc, fill factor FF, efficiency h of solar cells based on ZnTe/CdSe and ZnSe/CdSe hetero-junctions (HJ) depend on the external conditions: operation temperature, absorption and window layers thickness. Were determined a basic parameters for obtaining solar cells with optimal efficiency of light irradiation conversion.    Key words: solar cell, SCAPS-1D, efficiency. Nowadays a solar energy usage pays a higher attention of researchers as a perspective way of global energy crisis solution. Among the different methods of a conversion of solar energy into electric a photo-electrical transition is most reviewed.  In recent time for solar cells (SC) manufacturing used single-crystal, polycrystalline and amorphous Si, semiconductor thin films, etc [1]. II-VI semiconductor compounds, such as cadmium selenide (CdSe), zinc selenide (ZnSe), zinc telluride (ZnTe), are considered as a promised materials for economically effective unijunction and tandem photo-convertors because of their band gap (1.70 eV – CdSe, 2.67 eV – ZnSe, 2.26 eV – ZnTe). They may be used as absorber and window layers in solar cells applications. Therefore un-doped CdSe and ZnSe layers have n-type conductivity, ZnTe layer have a p-type [2-3]. For modeling SC characteristics are present several programmable packages: AMPS-1D, ASA, PC-1D, SCAPS-3200. The last software due to its convenience and development is most powerful for our improvement [4]. Abilities of this software allow to consider own properties of semiconductor layers as a recombination processes, which took place in interface boundaries and to determine the main SC characteristics: dark and light I-V curves, spectral distributions of quantum efficiency etc. The optimization of CS construction parameters based on ZnTe/CdSe and ZnSe/CdSe heterojunctions by modeling their main working characteristics using the SCAPS-3200 software package caused the aim of study. In table 1 is present the input parameters for modeling solar cells in SCAPS software. The main construction parameters which affect to the CS efficiency are window and absorber layers thickness. Therefore in this work an influence of these values on CS characteristics was investigated and their optimal values were determined.   Table 1 Basic parameters used at modeling of SC characteristics based on HJ ZnTe/CdSe and ZnSe/CdSe Parameters Compounds n-CdSe p-ZnTe n-ZnSe Wide band gap (300 K) Eg, eV 1.74 2.39 2.70 Electron affinity c, eV 4.95 3.53 4.09 Dielectric permittivity e 6.10 7.28 5.70 Effective density of states of the conduction band Nc, cm-3 1.75∙1018 2.24∙1018 2.40∙1018 Effective density of states of the valence band  Nv, cm-3 2.10∙1019 1.60∙1019 1.80∙1019 Electron mobility µn, cm2/Volt·c 650 340 500 Hole mobility µp, cm2/Volt·c - 100 30  Modeling was carried out in the range of the absorber layer thickness CdSe d = 1 – 3 mm, window layer ZnTe (ZnSe) thickness d = 0.1 – 0.6 mm, operation temperature T = 280 – 320 K. On fig.1 shown light I-V curves of SC based on ZnTe/CdSe and ZnSe/CdSe HJ modeled at different absorber layers thickness. As a result of a modeling it was carried out, that in case of HJ ZnTe/CdSe at the increasing of the absorber layer thickness from 1.0 to 3.0 mm observed some increasing of h of about 1 % in borderline cases. It may be explain by the presence of larger crystallites in ZnTe film by the increasing of the window layer. During the exploitation solar cell may heat, this factor may significantly impact on their working characteristics. Therefore we investigated an operational temperature influence on I-V curves ZnTe/CdSe and ZnSe/CdSe heterojunctions.  Fig. 1. Light I-V curves simulation of solar cells based on ZnTe/CdSe (a) and ZnSe/CdSe (b) hetero-junction depend on absorber layers thickness   In both cases solar cells modeling was estimated in the range of temperature T =280-320 К. It was determined that at increasing of operation temperature value Voc of SC ZnSe/CdSe decreased that may be explain by temperature dependence of current saturation. A comparison of the photo-convertors characteristics based on ZnTe/CdSe and ZnSe/CdSe heterojunctions shown on table 2.        Table 2 Solar cell modeling parameters with optimal constructional conditions (dCdSe = 3 mm, dZnTe(ZnSe) = 0.1 mm, T = 320 K)   Heterojunction Voc, Volt Jsc, mA/cm2 FF, % h, % ZnTe/CdSe 0.87 24.91 71.02 17.36 ZnSe/CdSe 0.61 15.83 42.34 4.06  The results of quantum efficiency modeling of both hetero-junctions presented on fig. 2. a b  Fig. 2. Numerical modeling of solar cells quantum efficiency based on ZnTe/CdSe (a) and ZnSe/CdSe (b) hetero-junction depend   As fig. 2 shown, the results of modeling are well correlated with theoretical study. In case of HJ ZnTe/CdSe value of QE at increasing of the absorber layer is bigger at the “red boundary” destination point and the maximal value of QE is about 95 %. In case of HJ ZnSe/CdSe the dependence of QE on the thickness of absorber layer is more difficult and is present at the lower values of the wavelength (λ ~ 300 nm).   At the increasing of the ZnТе (ZnSe) layer thickness an absorbance of photons with energy of hν >Eg has a bigger value. Decrease of the photons in absorber layer, which have an energy, bigger than Eg value for ZnTe, leads to decreasing of quantum yield of CS in the range of the wavelength λ > 680 нм.  An analysis of the light I-V curves and quantum efficiency modeling results of SC based on ideal HJ ZnTe/CdSe and ZnSe/CdSe occurs to make the next conclusions: SC efficiency based on ideal anisotropic HJ р-ZnTe/n-CdSe at optimal device construction (absorber layer thickness was dCdSe = 3 mm, window layer thickness was dZnTe = 0.1 mm) at the operation temperature T = 320 K may to increase on value h = 17.36%. This photo-cell has a wide photo-sensitivity area, which is present in the a b range of λ = (516 – 732) nm. SC efficiency based on ideal isotopic HJ n-ZnSe/n-CdSe is generally less and not bigger than h = 5%. Given the fact that the lattice mismatch in р-ZnTe/n-CdSe HJ is less than 1%, it provides an obtaining of the interface near to ideal, is a possibility to obtainо real high-efficiency photo-converters. This fact makes the perspective of their usage as a base (first) element of tandem solar cells.  References: 1. Yan B., Yue G., Xu X., Yang J., Guha S. High efficiency amorphous and nanocrystalline silicon solar cells // Physica Status Solidi A. – 2010. - Vol. 207, № 3. – P. 671 – 677.  2. Kasap S., Capper P. The Springer Handbook of Electronic and Photonic Materials. -  Berlin: Springer, 2007. – 1408 p. 3. Scheer R., Schock H.-W. Chalcogenide Photovoltaics. Physics, Technologies, and Thin Film Devices. - Weinheim: Wiley-VCH, 2011. – 548p. 4. Verschraegen J., Burgelman M. Numerical modeling of intra-band tunneling for heterojunction solar cells in SCAPS // Thin Solid Films. – 2007. – Vol. 515. – P. 6276 – 6279.  

Modeling of the main working parameters of solar cells based on ZnTe/CdSe and ZnSe/CdSe heterojunctions

SocioEconomic Challenges Journal (Sumy State University)

SWorld – 1-12 October  2013 
http://www.sworld.com.ua/index.php/ru/conference/the-content-of-conferences/archives-of-individual-conferences/oct-2013 
SCIENTIFIC RESEARCH AND THEIR PRACTICAL APPLICATIO N. MO DERN STATE AND WAYS O F DEVELO PMENT ‘2013 
Доклад/Физика и математика – Физика, механика и астрономия 
УДК 538.975 
Иващенко М.Н., Опанасюк А.С. 
МОДЕЛИРОВАНИЕ ОСНОВНЫХ ЭКСПЛУАТАЦИОННЫХ 
ХАРАКТЕРИСТИК СОЛНЕЧНЫХ ЭЛЕМЕНТОВ НА ОСНОВЕ 
ГЕТЕРОПЕРЕХОДОВ ZnTe/CdSe И ZnSe/CdSe 
Сумский государственный университет,  
Сумы, Римского-Корсакова 2, 40007  
UDC 538.975 
Ivashchenko M.M., Opanasyuk A.S. 
MODELING OF THE MAIN WORKING PARAMETERS OF SOLAR CELLS 
BASED ON ZnTe/CdSe AND ZnSe/CdSe HETEROJUNCTIONS 
Sumy State University, Sumy, Rimsky-Korsakov 2, 40007 
 
В данной работе было проведено моделирование основных параметров 
солнечных элементов, таких как: напряжение холостого хода Voc, плотность 
тока короткого замыкания Jsc, фактор заполнения FF, коэффициент полезного 
действия (КПД) h  солнечных элементов на основе гетеропереходов ZnTe/CdSe 
и ZnSe/CdSe, в зависимости от внешних условий: эксплуатационная 
температура, толщины поглощающего и оконного слоев. Были найдены 
начальные характеристики для получения солнечных элементов с оптимальной 
эффективностью преобразования энергии светового излучения.    
Ключевые слова: солнечный элемент, SCAPS-1D, коэффициент полезного 
действия. 
In this paper a modeling of the main working parameters, such as: open-circuit 
voltage Voc, short-circuit current density Jsc, fill factor FF, efficiency h of solar cells 
based on ZnTe/CdSe and ZnSe/CdSe hetero-junctions (HJ) depend on the external 
conditions: operation temperature, absorption and window layers thickness. Were 
determined a basic parameters for obtaining solar cells with optimal efficiency of 
light irradiation conversion.    
Key words: solar cell, SCAPS-1D, efficiency. 
Nowadays a solar energy usage pays a higher attention of researchers as a 
perspective way of global energy crisis solution. Among the different methods of a 
conversion of solar energy into electric a photo-electrical transition is most reviewed.  
In recent time for solar cells (SC) manufacturing used single-crystal, 
polycrystalline and amorphous Si, semiconductor thin films, etc [1]. II-VI 
semiconductor compounds, such as cadmium selenide (CdSe), zinc selenide (ZnSe), 
zinc telluride (ZnTe), are considered as a promised materials for economically 
effective unijunction and tandem photo-convertors because of their band gap (1.70 
eV – CdSe, 2.67 eV – ZnSe, 2.26 eV – ZnTe). They may be used as absorber and 
window layers in solar cells applications. Therefore un-doped CdSe and ZnSe layers 
have n-type conductivity, ZnTe layer have a p-type [2-3]. 
For modeling SC characteristics are present several programmable packages: 
AMPS-1D, ASA, PC-1D, SCAPS-3200. The last software due to its convenience and 
development is most powerful for our improvement [4]. Abilities of this software 
allow to consider own properties of semiconductor layers as a recombination 
processes, which took place in interface boundaries and to determine the main SC 
characteristics: dark and light I-V curves, spectral distributions of quantum efficiency 
etc. The optimization of CS construction parameters based on ZnTe/CdSe and 
ZnSe/CdSe heterojunctions by modeling their main working characteristics using the 
SCAPS-3200 software package caused the aim of study. 
In table 1 is present the input parameters for modeling solar cells in SCAPS 
software. 
The main construction parameters which affect to the CS efficiency are window 
and absorber layers thickness. Therefore in this work an influence of these values on 
CS characteristics was investigated and their optimal values were determined. 
 
 
Table 1 
Basic parameters used at modeling of SC characteristics based on HJ 
ZnTe/CdSe and ZnSe/CdSe 
Parameters 
Compounds 
n-CdSe p-ZnTe n-ZnSe 
Wide band gap (300 K) Eg, eV 1.74 2.39 2.70 
Electron affinity c, eV 4.95 3.53 4.09 
Dielectric permittivity e 6.10 7.28 5.70 
Effective density of states of the conduction 
band Nc, cm-3 
1.75∙1018 2.24∙1018 2.40∙1018 
Effective density of states of the valence band  
Nv, cm-3 
2.10∙1019 1.60∙1019 1.80∙1019 
Electron mobility µn, cm2/Volt·c 650 340 500 
Hole mobility µp, cm2/Volt·c - 100 30 
 
Modeling was carried out in the range of the absorber layer thickness CdSe d = 
1 – 3 mm, window layer ZnTe (ZnSe) thickness d = 0.1 – 0.6 mm, operation 
temperature T = 280 – 320 K. 
On fig.1 shown light I-V curves of SC based on ZnTe/CdSe and ZnSe/CdSe HJ 
modeled at different absorber layers thickness. 
As a result of a modeling it was carried out, that in case of HJ ZnTe/CdSe at the 
increasing of the absorber layer thickness from 1.0 to 3.0 mm observed some 
increasing of h of about 1 % in borderline cases. It may be explain by the presence of 
larger crystallites in ZnTe film by the increasing of the window layer. During the 
exploitation solar cell may heat, this factor may significantly impact on their working 
characteristics. Therefore we investigated an operational temperature influence on I-
V curves ZnTe/CdSe and ZnSe/CdSe heterojunctions. 
 Fig. 1. Light I-V curves simulation of solar cells based on ZnTe/CdSe (a) 
and ZnSe/CdSe (b) hetero-junction depend on absorber layers thickness  
 
In both cases solar cells modeling was estimated in the range of temperature T 
=280-320 К. It was determined that at increasing of operation temperature value Voc 
of SC ZnSe/CdSe decreased that may be explain by temperature dependence of 
current saturation. 
A comparison of the photo-convertors characteristics based on ZnTe/CdSe and 
ZnSe/CdSe heterojunctions shown on table 2.        
Table 2 
Solar cell modeling parameters with optimal constructional conditions 
(dCdSe = 3 mm, dZnTe(ZnSe) = 0.1 mm, T = 320 K)   
Heterojunction Voc, Volt Jsc, mA/cm2 FF, % h, % 
ZnTe/CdSe 0.87 24.91 71.02 17.36 
ZnSe/CdSe 0.61 15.83 42.34 4.06 
 
The results of quantum efficiency modeling of both hetero-junctions presented 
on fig. 2. 
a b 
 Fig. 2. Numerical modeling of solar cells quantum efficiency based on 
ZnTe/CdSe (a) and ZnSe/CdSe (b) hetero-junction depend  
 
As fig. 2 shown, the results of modeling are well correlated with theoretical 
study. In case of HJ ZnTe/CdSe value of QE at increasing of the absorber layer is 
bigger at the “red boundary” destination point and the maximal value of QE is about 
95 %. In case of HJ ZnSe/CdSe the dependence of QE on the thickness of absorber 
layer is more difficult and is present at the lower values of the wavelength (λ ~ 300 
nm).   
At the increasing of the ZnТе (ZnSe) layer thickness an absorbance of photons 
with energy of hν >Eg has a bigger value. Decrease of the photons in absorber layer, 
which have an energy, bigger than Eg value for ZnTe, leads to decreasing of quantum 
yield of CS in the range of the wavelength λ > 680 нм.  
An analysis of the light I-V curves and quantum efficiency modeling results of 
SC based on ideal HJ ZnTe/CdSe and ZnSe/CdSe occurs to make the next 
conclusions: 
SC efficiency based on ideal anisotropic HJ р-ZnTe/n-CdSe at optimal device 
construction (absorber layer thickness was dCdSe = 3 mm, window layer thickness was 
dZnTe = 0.1 mm) at the operation temperature T = 320 K may to increase on value h = 
17.36%. This photo-cell has a wide photo-sensitivity area, which is present in the 
a b 
range of λ = (516 – 732) nm. SC efficiency based on ideal isotopic HJ n-ZnSe/n-
CdSe is generally less and not bigger than h = 5%. 
Given the fact that the lattice mismatch in р-ZnTe/n-CdSe HJ is less than 1%, it 
provides an obtaining of the interface near to ideal, is a possibility to obtainо real 
high-efficiency photo-converters. This fact makes the perspective of their usage as a 
base (first) element of tandem solar cells. 
 
References: 
1. Yan B., Yue G., Xu X., Yang J., Guha S. High efficiency amorphous and 
nanocrystalline silicon solar cells // Physica Status Solidi A. – 2010. - Vol. 207, № 3. 
– P. 671 – 677.  
2. Kasap S., Capper P. The Springer Handbook of Electronic and Photonic 
Materials. -  Berlin: Springer, 2007. – 1408 p. 
3. Scheer R., Schock H.-W. Chalcogenide Photovoltaics. Physics, Technologies, 
and Thin Film Devices. - Weinheim: Wiley-VCH, 2011. – 548p. 
4. Verschraegen J., Burgelman M. Numerical modeling of intra-band tunneling 
for heterojunction solar cells in SCAPS // Thin Solid Films. – 2007. – Vol. 515. – P. 
6276 – 6279. 
 


https://essuir.sumdu.edu.ua/bitstream/123456789/32602/1/MODELING%20OF%20THE%20MAIN%20WORKING%20PARAMETERS%20OF%20SOLAR%20CELLS.pdf

Modeling of the main working parameters of solar cells based on ZnTe/CdSe and ZnSe/CdSe heterojunctions

Abstract

Similar works

Full text

Available Versions

Electronic Sumy State University Institutional Repository

SocioEconomic Challenges Journal (Sumy State University)