In search for new materials for nanoelectronics, many efforts have been put into development of chem-istry and physics of graphene, and, more recently, of other inorganic layered compounds having a bandgap (h-BN, MoS2 etc.). Here we introduce a new view on the family of transition metal trichalcogenides MQ3 (M=Ti, Zr, Nb, Ta; Q=S, Se), which were earlier considered as quasi-one-dimensional systems, and demon-strate that they also may be regarded as layered species suitable for exfoliation by a chemical method. Stable, concentrated colloidal dispersions of high-quality crystalline NbS3 and NbSe3 nanoribbons down to mono- and few-layer-thick are prepared by ultrasonic treatment of the bulk compound in several common organic solvents (DMF, NMP, CH3CN, iPrOH, H2O/EtOH). The dispersions and thin films prepared from them by vacuum filtration or spraying are characterized by a set of physical-chemical methods. Current-voltage characteristics of the NbS3 films show that charge carrier mobility is as high as 1200 – 2400 cm2V-1s-1, exceeding that of MoS2 and making NbQ3 promising potential candidates for field-effect transistors.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3522

Antonova, I.V.

Artemkina, S.B.

Fedorov, V.E.

Grayfer, E.D.

Medvedev, M.V.

Mironov, Y.V.

Romanenko, A.I.

Electronic Sumy State University Institutional Repository

PROCEEDINGS OF THE INTERNATIONAL CONFERENCE  NANOMATERIALS: APPLICATIONS AND PROPERTIES Vol. 2 No 1, 01NTF34(3pp) (2013)   2304-1862/2013/2(1)01NTF34(3) 01NTF34-1  2013 Sumy State University Transition Metal Trichalcogenides as Novel Layered Nano Species  V.E. Fedorov1, S.B. Artemkina1, E.D. Grayfer1, Y.V. Mironov1, A.I. Romanenko1, I.V. Antonova2,  M.V. Medvedev3  1 Nikolaev Institute of Inorganic Chemistry, Siberian Branch of Russian Academy of Science,  3,  Acad. Lavrentiev prospect, 630090, Novosibirsk, Russian Federation 2 Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Science,  13, Acad. Lavrentiev prospect, 630090, Novosibirsk, Russian Federation 3 Samsung Advanced Institute of Technology, Suwon, South Korea  (Received 10 June 2013; published online 02 September2013)  In search for new materials for nanoelectronics, many efforts have been put into development of chem-istry and physics of graphene, and, more recently, of other inorganic layered compounds having a bandgap (h-BN, MoS2 etc.). Here we introduce a new view on the family of transition metal trichalcogenides MQ3 (M=Ti, Zr, Nb, Ta; Q=S, Se), which were earlier considered as quasi-one-dimensional systems, and demon-strate that they also may be regarded as layered species suitable for exfoliation by a chemical method. Stable, concentrated colloidal dispersions of high-quality crystalline NbS3 and NbSe3 nanoribbons down to mono- and few-layer-thick are prepared by ultrasonic treatment of the bulk compound in several common organic solvents (DMF, NMP, CH3CN, iPrOH, H2O/EtOH). The dispersions and thin films prepared from them by vacuum filtration or spraying are characterized by a set of physical-chemical methods. Current-voltage characteristics of the NbS3 films show that charge carrier mobility is as high as 1200 – 2400 cm2V-1s-1, exceeding that of MoS2 and making NbQ3 promising potential candidates for field-effect transistors.  Keywords: Niobium Trichalcogenides, Nanocrystals, Colloids, Semiconductors, Thin films   PACS numbers: 72.80.Ga; 72.20.Ee   1. INTRODUCTION  Discovery of graphene has prompted a great interest in other inorganic layered compounds. Although graphene possesses extremely high carrier mobility and other re-markable properties, zero energy gap retards its applica-tion in logic electronics. In search for suitable materials, some well-known layered materials including h-BN, tran-sition metal dichalcogenides MQ2 (M=Nb, Ta, Mo, W; Q=S, Se), and Bi2Q3, were reconsidered in the context of the present-day knowledge of low-dimensional systems [1-13]. In the present work we focused on the niobium trichalcogenides NbQ3 (Q=S, Se). During several decades, trichalcogenides of niobium and tantalum have attracted considerable attention in the fundamental research as quasi-one-dimensional systems with intriguing structural and electronic properties including Peierls instability, formation of charge density waves and some related unu-sual phenomena [14-15]. Although NbQ3 were considered traditionally as quasi-one-dimensional (1D) systems be-cause of their high anisotropic electronic and chain-like structural properties, they may also be regarded as mem-bers of the group of layered materials. The crystal struc-tures of MQ3 consist of one-dimensional distorted trigonal (wedge-shaped) prisms with metal atom close to the cen-ter of each prism (Figure 1 a). The prisms are bonded ad-ditionally in two prism layers; thus, the same packing may be considered as a layered structure (Figure 1 b). In contrast to graphene and some of its inorganic an-alogues, very few attempts have been made to exfoliate NbQ3. This may be explained by the fact that NbQ3 crys-tals grow in the form of wires with very narrow widths that makes it difficult to apply mechanical exfoliation techniques. Therefore, we suggest an alternative way to exfoliate NbQ3 in liquid phase and assemble it into thin films suitable for nanotechnology devices. We showed that NbS3, NbSe3 and other trichalcogenides may be efficiently exfoliated down to mono- and few-layers in many common organic solvents resulting in high-quality crystalline nanoribbons stably dispersed in colloids. Liq-uid-phase exfoliation technique is versatile, scalable, and well-suited to obtain NbQ3 thin films on a variety of sub-strates. The process may be potentially extended to all the transition metal trichalcogenide family with their rich variety of properties. Thin films produced from these dispersions possess excellent characteristics of transport and charge carrier mobility making them promising candidates for future electronics.    Fig. 1 – Structure of triclinic niobium trisulfide: a – two wedge-shaped columns of sulfur atoms with paired niobium atoms inside; b – the structure view on crystallographic ac plane demonstrating prism bonding into layers.  2. EXPERIMENTAL  2.1 The Synthesis of NbQ3   The synthesis of triclinic NbS3 and monoclinic NbSe3  V.E. FEDOROV, S.B. ARTEMKINA, E.D. GRAYFER ET AL. PROC. NAP 2, 01NTF34 (2013)   01NTF34-2 was carried out using high temperature ampoule method starting from high purity elements. The stoichiometric mixtures of Nb:Q=1:3 were loaded into ampoules which were evacuated to 10-5 bar, sealed under dynamic vacu-um, heated in electrical furnace at 600°С during 160h, and then cooling to room temperature for 5 h.  2.2 Preparation of Colloidal Dispersions of NbQ3   Bulk powdered samples of NbS3 or NbSe3 (0.5 – 0.7 g) were sonicated in Elmasonic S40 ultrasonic bath (120 W) in 80–100 ml of organic solvents for several hours. The resulting mixtures were centrifuged at 2600 rpm at am-bient temperature to remove large (heavy) particles.   2.3 Preparation of Thin Films of NbQ3  The films of NbS3 and NbSe3 were prepared from colloidal dispersions by their filtration using membrane filters Whatman Anodisc with pore size of 0.02 μm and by spray method.  3. RESULTS AND DISCUSSION   3.1 Preparation and Characterization of NbQ3 Colloidal Dispersions  Bulk samples of triclinic NbS3 and monoclinic NbSe3 were sonicated in a number of organic solvents (DMF, acetone, acetonitrile, water, ethanol, water-ethanol 55/45 vol.% mixture, isopropanol or 1-methyl-2- pyrrolidone) in order to achieve exfoliation. NbQ3 con-centration was determined by filtering the dispersions. and weighing of the filtered mass, or by UV-vis spectral analysis. Dynamic light scattering (DLS) measure-ments yielded an average effective hydrodynamic di-ameter of particles ~150-200 nm. High-resolution TEM images and associated Fourier transforms proved that the particles in dispersions retained good crystallinity with triclinic NbS3 or monoclinic NbSe3 cells undam-aged during liquid-phase exfoliation process.  3.2 Preparation and Characterization of NbQ3 Films  For integration of materials into nanotechnology de-vices it should be in the form of thin films rather than bulk powder. As we have noted earlier, mechanical exfo-liation of NbQ3 appears difficult due to their geometry, and in this work colloidal solutions were used for prepa-ration of thin NbS3 and NbSe3 films. The films were pre-pared by two methods: (i) filtration of colloidal disper-sions through 0.02 o-disc”; and (ii) spraying colloidal dispersions on heated substrates (~ 200–250oC). The later method is more flex-ible as it allows to prepare coatings of different complex configurations. The thin films prepared by both methods are quite smooth and transparent. The films were stud-ied by powder X-ray diffraction (PXRD), X-ray photoelec-tron spectroscopy (XPS), Raman and IR spectroscopies. According to PXRD data, the films are characterized by strongly textured nature with high intensity of 00l Bragg reflections. This fact may be expected from general structural consideration, but experimental evidence of such oriented packing is important. Raman and IR spec-tra of bulk powder NbS3, NbSe3 and thin films prepared from their dispersions are in close agreement with each other and with reported data. All methods, XRD, XPS, IR and Raman spectroscopies, confirm phase composi-tion of the films: they are composed of well-crystallized trichalcogenide nanoparticles, which are highly oriented in the film along 00l planes. The measurement of transport properties of NbS3 films was carried out in the temperature interval of 4.2 – 500K using standard four-probe technique. Resistivity of NbS3 film grows exponentially with temperature de-crease (Figure 2 a). This growth can be fitted by fluctua-tion model of tunneling. The current-voltage characteristics ((Figure 2 b) of thin NbS3 film (~ 0.5–1 µm) deposited from colloidal dis-persions by spray technology on a SiO2/Si substrate were investigated in transistor configuration with the use of Si substrate as a gate. The electron (µe) and hole (µh) mobilities were determined as 1200 – 2400 cm2V-1s-1. High value of carrier mobility in NbS3 film exceeds simi-lar characteristics measured on MoS2 single- and multi-layers mechanically exfoliated from bulk MoS2 crystals. This is an important property for use in field-effect tran-sistors since film production from colloidal solutions is a simpler and more practical technology comparing to me-chanical exfoliation of single crystal samples.    Fig. 2 – a – temperature dependence of resistivity vs. reciprocal temperature for NbS3 film in coordinates ln[ (T)] - Tt/(T+TS). The straight line is an approximation by equation σ(T)= σtexp[Tt/(T+TS)], were Tt.= 1384 K (0.12 eV), TS.= 80 K (0.007 eV); b – IDS (VG) characteristics for NbS3 films obtained from an alcohol/water solution measured with used of Si substrate as a gate.  TRANSITION METAL TRICHALCOGENIDES AS NOVEL LAYERED… PROC. NAP 2, 01NTF34 (2013)   01NTF34-3 4. CONCLUSIONS  We have suggested to reconsider transition metal trichalcogenides with quasi-one dimensional electrical properties as novel layered species for nanotechnology and demonstrated their exfoliation in common organic solvents. Thin films of NbS3 in the form of ~ 1 – 4 layer-thick high-quality crystalline nanoribbons with ad-vanced characteristics for field-effect transistors were prepared: electron and hole mobility was estimated as 1200 – 2400 cm2V-1s-1. We believe that this work pre-sents a fresh view on the family of transition metal trichalcogenides and opens up a wealth of new oppor-tunities with potential in future nanoelectronics and other technological areas yet to be discovered.   ACKNOWLEDGEMENTS  The study was financially supported by Samsung Advanced Institute of Technology, Suwon, Korea (GRO Project) and Ministry of Education and Science of Rus-sian Federation (Project-agreements 8030 and 8472). Authors are grateful to Prof. A.I. Bulavchenko for his valuable comments.   REFERENCES  1. K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, A. K. Geim, Proc. Natl. Acad. Sci. U. S. A. 102, No 30, 10451 (2005). 2. H. S. S. Ramakrishna Matte, A. Gomathi, A. K. Manna, D. J. Late, R. Datta, S. K. Pati, C. N. R. Rao, Angew. Chem., Int. Ed. 49, No 24, 4059 (2010). 3. M. Xu, T. Liang, M. Shi, H. Chen, Chem. Rev. 113, No 5, 3766 (2013). 4. A.S. Nazarov, V.N. Demin, E.D. Grayfer, A.I. Bulavchenko, A.T. Arymbaeva, H.-J. Shin, J.-Y. Choi, V. E. Fedorov, Chem. Asian J. 7, No 3, 554 (2012). 5. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. Kis, Nat. Nanotechnol. 6, No 3, 147 (2011). 6. H. Tang, D. Liang, R. L. J. Qiu, X. P. A. Gao, ACS Nano 5, No 9, 7510 (2011). 7. B. Radisavljevic, M. B. Whitwick, A. Kis, ACS Nano 5, No 12, 9934 (2011). 8. J.N. Coleman, M. Lotya, A. O’Neill, S.D. Bergin, P.J. King, U. Khan, K. Young, A. Gaucher, S. De, R. J. Smith, I.V. Shvets, S.K. Arora, G. Stanton, H.-Y. Kim, K. Lee, G. T. Kim, G.S. Duesberg, T. Hallam, J. J. Boland, J. J. Wang, J.F. Donegan, J.C. Grunlan, G. Moriarty, A. Shmeliov, R.J. Nicholls, J.M. Perkins, E.M. Grieveson, K. Theuwissen, D.W. McComb, P.D. Nellist, V. Nicolosi, Science 331, No 6017, 568 (2011). 9. R.J. Smith, P.J. King, M. Lotya, C. Wirtz, U. Khan, S. De, A. O'Neill, G.S. Duesberg, J.C. Grunlan, G. Moriarty, J. Chen, J. Wang, A.I. Minett, V. Nicolosi, J.N. Coleman, Adv. Mater. 23, No 34, 3944 (2011). 10. B. Radisavljevic, M. B. Whitwick, A. Kis, Appl. Phys. Lett. 101, No 4, 043103 (2012). 11. H. Li, Z. Yin, Q. He, H. Li, X. Huang, G. Lu, D. W. H. Fam, A. I. Y. Tok, Q. Zhang, H. Zhang, Small 8, No 1, 63 (2012). 12. Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, M. S. Strano, Nat. Nanotechnol. 7, No 11, 699 (2012). 13. S. Kim, A. Konar, W.-S. Hwang, J. H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J.-B. Yoo, J.-Y. Choi, Y. W. Jin, S. Y. Lee, D. Jena, W. Choi, K. Kim, Nat Commun 3, No,  (2012). 14. V. E. Fedorov, Chalcogenides of the transition metals. Quasi-one-dimensional compounds, (Nauka, Novosibirsk, 1988). 15. V. Y. Pokrovskii, S. G. Zybtsev, M. V. Nikitin, I. G. Gorlova, V. F. Nasretdinova, S. V. Zaitsev-Zotov, Phys. Usp. 56 No 1, 29 (2013).  

Transition Metal Trichalcogenides as Novel Layered Nano Species

SocioEconomic Challenges Journal (Sumy State University)

PROCEEDINGS OF THE INTERNATIONAL CONFERENCE  
NANOMATERIALS: APPLICATIONS AND PROPERTIES 
Vol. 2 No 1, 01NTF34(3pp) (2013) 
 
 
2304-1862/2013/2(1)01NTF34(3) 01NTF34-1  2013 Sumy State University 
Transition Metal Trichalcogenides as Novel Layered Nano Species 
 
V.E. Fedorov1, S.B. Artemkina1, E.D. Grayfer1, Y.V. Mironov1, A.I. Romanenko1, I.V. Antonova2,  
M.V. Medvedev3 
 
1 Nikolaev Institute of Inorganic Chemistry, Siberian Branch of Russian Academy of Science,  
3,  Acad. Lavrentiev prospect, 630090, Novosibirsk, Russian Federation 
2 Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Science,  
13, Acad. Lavrentiev prospect, 630090, Novosibirsk, Russian Federation 
3 Samsung Advanced Institute of Technology, Suwon, South Korea 
 
(Received 10 June 2013; published online 02 September2013) 
 
In search for new materials for nanoelectronics, many efforts have been put into development of chem-
istry and physics of graphene, and, more recently, of other inorganic layered compounds having a bandgap 
(h-BN, MoS2 etc.). Here we introduce a new view on the family of transition metal trichalcogenides MQ3 
(M=Ti, Zr, Nb, Ta; Q=S, Se), which were earlier considered as quasi-one-dimensional systems, and demon-
strate that they also may be regarded as layered species suitable for exfoliation by a chemical method. 
Stable, concentrated colloidal dispersions of high-quality crystalline NbS3 and NbSe3 nanoribbons down to 
mono- and few-layer-thick are prepared by ultrasonic treatment of the bulk compound in several common 
organic solvents (DMF, NMP, CH3CN, iPrOH, H2O/EtOH). The dispersions and thin films prepared from 
them by vacuum filtration or spraying are characterized by a set of physical-chemical methods. Current-
voltage characteristics of the NbS3 films show that charge carrier mobility is as high as 1200 – 2400 cm2V-
1s-1, exceeding that of MoS2 and making NbQ3 promising potential candidates for field-effect transistors. 
 
Keywords: Niobium Trichalcogenides, Nanocrystals, Colloids, Semiconductors, Thin films 
 
 PACS numbers: 72.80.Ga; 72.20.Ee 
 
 
1. INTRODUCTION 
 
Discovery of graphene has prompted a great interest 
in other inorganic layered compounds. Although graphene 
possesses extremely high carrier mobility and other re-
markable properties, zero energy gap retards its applica-
tion in logic electronics. In search for suitable materials, 
some well-known layered materials including h-BN, tran-
sition metal dichalcogenides MQ2 (M=Nb, Ta, Mo, W; 
Q=S, Se), and Bi2Q3, were reconsidered in the context of 
the present-day knowledge of low-dimensional systems [1-
13]. In the present work we focused on the niobium 
trichalcogenides NbQ3 (Q=S, Se). During several decades, 
trichalcogenides of niobium and tantalum have attracted 
considerable attention in the fundamental research as 
quasi-one-dimensional systems with intriguing structural 
and electronic properties including Peierls instability, 
formation of charge density waves and some related unu-
sual phenomena [14-15]. Although NbQ3 were considered 
traditionally as quasi-one-dimensional (1D) systems be-
cause of their high anisotropic electronic and chain-like 
structural properties, they may also be regarded as mem-
bers of the group of layered materials. The crystal struc-
tures of MQ3 consist of one-dimensional distorted trigonal 
(wedge-shaped) prisms with metal atom close to the cen-
ter of each prism (Figure 1 a). The prisms are bonded ad-
ditionally in two prism layers; thus, the same packing 
may be considered as a layered structure (Figure 1 b). 
In contrast to graphene and some of its inorganic an-
alogues, very few attempts have been made to exfoliate 
NbQ3. This may be explained by the fact that NbQ3 crys-
tals grow in the form of wires with very narrow widths 
that makes it difficult to apply mechanical exfoliation 
techniques. Therefore, we suggest an alternative way to 
exfoliate NbQ3 in liquid phase and assemble it into thin 
films suitable for nanotechnology devices. We showed 
that NbS3, NbSe3 and other trichalcogenides may be 
efficiently exfoliated down to mono- and few-layers in 
many common organic solvents resulting in high-quality 
crystalline nanoribbons stably dispersed in colloids. Liq-
uid-phase exfoliation technique is versatile, scalable, and 
well-suited to obtain NbQ3 thin films on a variety of sub-
strates. The process may be potentially extended to all 
the transition metal trichalcogenide family with their 
rich variety of properties. Thin films produced from 
these dispersions possess excellent characteristics of 
transport and charge carrier mobility making them 
promising candidates for future electronics. 
 
 
 
Fig. 1 – Structure of triclinic niobium trisulfide: a – two 
wedge-shaped columns of sulfur atoms with paired niobium 
atoms inside; b – the structure view on crystallographic ac 
plane demonstrating prism bonding into layers. 
 
2. EXPERIMENTAL 
 
2.1 The Synthesis of NbQ3  
 
The synthesis of triclinic NbS3 and monoclinic NbSe3 
 V.E. FEDOROV, S.B. ARTEMKINA, E.D. GRAYFER ET AL. PROC. NAP 2, 01NTF34 (2013) 
 
 
01NTF34-2 
was carried out using high temperature ampoule method 
starting from high purity elements. The stoichiometric 
mixtures of Nb:Q=1:3 were loaded into ampoules which 
were evacuated to 10-5 bar, sealed under dynamic vacu-
um, heated in electrical furnace at 600°С during 160h, 
and then cooling to room temperature for 5 h. 
 
2.2 Preparation of Colloidal Dispersions of 
NbQ3  
 
Bulk powdered samples of NbS3 or NbSe3 (0.5 – 0.7 g) 
were sonicated in Elmasonic S40 ultrasonic bath (120 W) 
in 80–100 ml of organic solvents for several hours. The 
resulting mixtures were centrifuged at 2600 rpm at am-
bient temperature to remove large (heavy) particles.  
 
2.3 Preparation of Thin Films of NbQ3 
 
The films of NbS3 and NbSe3 were prepared from 
colloidal dispersions by their filtration using membrane 
filters Whatman Anodisc with pore size of 0.02 μm and 
by spray method. 
 
3. RESULTS AND DISCUSSION  
 
3.1 Preparation and Characterization of NbQ3 
Colloidal Dispersions 
 
Bulk samples of triclinic NbS3 and monoclinic 
NbSe3 were sonicated in a number of organic solvents 
(DMF, acetone, acetonitrile, water, ethanol, water-
ethanol 55/45 vol.% mixture, isopropanol or 1-methyl-2- 
pyrrolidone) in order to achieve exfoliation. NbQ3 con-
centration was determined by filtering the dispersions. 
and weighing of the filtered mass, or by UV-vis spectral 
analysis. Dynamic light scattering (DLS) measure-
ments yielded an average effective hydrodynamic di-
ameter of particles ~150-200 nm. High-resolution TEM 
images and associated Fourier transforms proved that 
the particles in dispersions retained good crystallinity 
with triclinic NbS3 or monoclinic NbSe3 cells undam-
aged during liquid-phase exfoliation process. 
 
3.2 Preparation and Characterization of NbQ3 
Films 
 
For integration of materials into nanotechnology de-
vices it should be in the form of thin films rather than 
bulk powder. As we have noted earlier, mechanical exfo-
liation of NbQ3 appears difficult due to their geometry, 
and in this work colloidal solutions were used for prepa-
ration of thin NbS3 and NbSe3 films. The films were pre-
pared by two methods: (i) filtration of colloidal disper-
sions through 0.02 o-
disc”; and (ii) spraying colloidal dispersions on heated 
substrates (~ 200–250oC). The later method is more flex-
ible as it allows to prepare coatings of different complex 
configurations. The thin films prepared by both methods 
are quite smooth and transparent. The films were stud-
ied by powder X-ray diffraction (PXRD), X-ray photoelec-
tron spectroscopy (XPS), Raman and IR spectroscopies. 
According to PXRD data, the films are characterized by 
strongly textured nature with high intensity of 00l Bragg 
reflections. This fact may be expected from general 
structural consideration, but experimental evidence of 
such oriented packing is important. Raman and IR spec-
tra of bulk powder NbS3, NbSe3 and thin films prepared 
from their dispersions are in close agreement with each 
other and with reported data. All methods, XRD, XPS, 
IR and Raman spectroscopies, confirm phase composi-
tion of the films: they are composed of well-crystallized 
trichalcogenide nanoparticles, which are highly oriented 
in the film along 00l planes. 
The measurement of transport properties of NbS3 
films was carried out in the temperature interval of 4.2 – 
500K using standard four-probe technique. Resistivity of 
NbS3 film grows exponentially with temperature de-
crease (Figure 2 a). This growth can be fitted by fluctua-
tion model of tunneling. 
The current-voltage characteristics ((Figure 2 b) of 
thin NbS3 film (~ 0.5–1 µm) deposited from colloidal dis-
persions by spray technology on a SiO2/Si substrate were 
investigated in transistor configuration with the use of 
Si substrate as a gate. The electron (µe) and hole (µh) 
mobilities were determined as 1200 – 2400 cm2V-1s-1. 
High value of carrier mobility in NbS3 film exceeds simi-
lar characteristics measured on MoS2 single- and multi-
layers mechanically exfoliated from bulk MoS2 crystals. 
This is an important property for use in field-effect tran-
sistors since film production from colloidal solutions is a 
simpler and more practical technology comparing to me-
chanical exfoliation of single crystal samples. 
 
 
 
Fig. 2 – a – temperature dependence of resistivity vs. reciprocal temperature for NbS3 film in coordinates ln[ (T)] - Tt/(T+TS). The 
straight line is an approximation by equation σ(T)= σtexp[Tt/(T+TS)], were Tt.= 1384 K (0.12 eV), TS.= 80 K (0.007 eV); b – IDS (VG) 
characteristics for NbS3 films obtained from an alcohol/water solution measured with used of Si substrate as a gate. 
 TRANSITION METAL TRICHALCOGENIDES AS NOVEL LAYERED… PROC. NAP 2, 01NTF34 (2013) 
 
 
01NTF34-3 
4. CONCLUSIONS 
 
We have suggested to reconsider transition metal 
trichalcogenides with quasi-one dimensional electrical 
properties as novel layered species for nanotechnology 
and demonstrated their exfoliation in common organic 
solvents. Thin films of NbS3 in the form of ~ 1 – 4 layer-
thick high-quality crystalline nanoribbons with ad-
vanced characteristics for field-effect transistors were 
prepared: electron and hole mobility was estimated as 
1200 – 2400 cm2V-1s-1. We believe that this work pre-
sents a fresh view on the family of transition metal 
trichalcogenides and opens up a wealth of new oppor-
tunities with potential in future nanoelectronics and 
other technological areas yet to be discovered.  
 
ACKNOWLEDGEMENTS 
 
The study was financially supported by Samsung 
Advanced Institute of Technology, Suwon, Korea (GRO 
Project) and Ministry of Education and Science of Rus-
sian Federation (Project-agreements 8030 and 8472). 
Authors are grateful to Prof. A.I. Bulavchenko for 
his valuable comments. 
 
 
REFERENCES 
 
1. K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. 
Khotkevich, S. V. Morozov, A. K. Geim, Proc. Natl. Acad. 
Sci. U. S. A. 102, No 30, 10451 (2005). 
2. H. S. S. Ramakrishna Matte, A. Gomathi, A. K. Manna, D. 
J. Late, R. Datta, S. K. Pati, C. N. R. Rao, Angew. Chem., 
Int. Ed. 49, No 24, 4059 (2010). 
3. M. Xu, T. Liang, M. Shi, H. Chen, Chem. Rev. 113, No 5, 
3766 (2013). 
4. A.S. Nazarov, V.N. Demin, E.D. Grayfer, A.I. Bulavchenko, 
A.T. Arymbaeva, H.-J. Shin, J.-Y. Choi, V. E. Fedorov, 
Chem. Asian J. 7, No 3, 554 (2012). 
5. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. 
Kis, Nat. Nanotechnol. 6, No 3, 147 (2011). 
6. H. Tang, D. Liang, R. L. J. Qiu, X. P. A. Gao, ACS Nano 5, 
No 9, 7510 (2011). 
7. B. Radisavljevic, M. B. Whitwick, A. Kis, ACS Nano 5, No 
12, 9934 (2011). 
8. J.N. Coleman, M. Lotya, A. O’Neill, S.D. Bergin, P.J. King, 
U. Khan, K. Young, A. Gaucher, S. De, R. J. Smith, I.V. 
Shvets, S.K. Arora, G. Stanton, H.-Y. Kim, K. Lee, G. T. 
Kim, G.S. Duesberg, T. Hallam, J. J. Boland, J. J. Wang, 
J.F. Donegan, J.C. Grunlan, G. Moriarty, A. Shmeliov, R.J. 
Nicholls, J.M. Perkins, E.M. Grieveson, K. Theuwissen, 
D.W. McComb, P.D. Nellist, V. Nicolosi, Science 331, No 
6017, 568 (2011). 
9. R.J. Smith, P.J. King, M. Lotya, C. Wirtz, U. Khan, S. De, 
A. O'Neill, G.S. Duesberg, J.C. Grunlan, G. Moriarty, 
J. Chen, J. Wang, A.I. Minett, V. Nicolosi, J.N. Coleman, 
Adv. Mater. 23, No 34, 3944 (2011). 
10. B. Radisavljevic, M. B. Whitwick, A. Kis, Appl. Phys. Lett. 
101, No 4, 043103 (2012). 
11. H. Li, Z. Yin, Q. He, H. Li, X. Huang, G. Lu, D. W. H. Fam, 
A. I. Y. Tok, Q. Zhang, H. Zhang, Small 8, No 1, 63 (2012). 
12. Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, M. 
S. Strano, Nat. Nanotechnol. 7, No 11, 699 (2012). 
13. S. Kim, A. Konar, W.-S. Hwang, J. H. Lee, J. Lee, J. Yang, 
C. Jung, H. Kim, J.-B. Yoo, J.-Y. Choi, Y. W. Jin, S. Y. Lee, 
D. Jena, W. Choi, K. Kim, Nat Commun 3, No,  (2012). 
14. V. E. Fedorov, Chalcogenides of the transition metals. 
Quasi-one-dimensional compounds, (Nauka, Novosibirsk, 
1988). 
15. V. Y. Pokrovskii, S. G. Zybtsev, M. V. Nikitin, I. G. 
Gorlova, V. F. Nasretdinova, S. V. Zaitsev-Zotov, Phys. 
Usp. 56 No 1, 29 (2013). 
 


English

https://essuir.sumdu.edu.ua/bitstream/123456789/35223/1/princon_2013_2_1_36.pdf

Transition Metal Trichalcogenides as Novel Layered Nano Species

Abstract

Similar works

Full text

Available Versions

Electronic Sumy State University Institutional Repository

SocioEconomic Challenges Journal (Sumy State University)