Si-rich and N-rich silicon nitride films were deposited at low temperature 300 °C by using plasmaenhanced
chemical vapor deposition (PECVD). The optical and structural properties of these films have
been investigated by ellipsometry, Rutherford backscattering (RBS), transmission electron microscopy
(TEM), Raman spectroscopy (RS) and photoluminescence (PL). The formation of silicon clusters in both Sirich
and N-rich silicon nitride films after annealing at 900 °C and 1000 °C for hour in N2 ambient has been
shown by TEM. Dependency of PL spectra on stoichiometry and post-annealing temperature was analyzed.
The contribution of Si and N-related defects in emitting properties of Si-rich and N-rich SiNx has been
discussed.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3516