Preparing MoS2 films in mild conditions, using deposition of suspended MoS2 nanoplatelets onto the substrate is described. For this purpose, the nanosized MoS2 particles were obtained via restacking of MoS2 single layers produced by chemical exfoliation of bulk MoS2 crystals in liquid media. X-Ray diffraction study of the films showed that the basal planes of MoS2 crystallites are mainly oriented in the plane paral-lel to the substrate. Atomic force microscopy examination revealed the dependence of the film surface to-pography, as well as the roughness characteristics on the film thickness, which varied in the range of 0.03-2.2 m. Optical absorption spectra of the obtained MoS2 films were found to contain the same absorption bands as the spectra of thin natural MoS2 single crystals. Dark conductivity of the films was determined to be ~ 10–3 S∙сm–1 at 300 K. The present MoS2 films were found to be photosensitive in the range of 300-800 nm, providing the maximum value of photocurrent under photoexcitation at ~ 440 nm.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3505

Golub, A.S.

Ivanova, O.P.

Klimenko, I.V.

Krinichnaya, E.P.

Lenenko, N.D.

Zhuravleva, T.S.

SocioEconomic Challenges Journal (Sumy State University)

PROCEEDINGS OF THE INTERNATIONAL CONFERENCE  
NANOMATERIALS: APPLICATIONS AND PROPERTIES 
Vol. 2 No 1, 01NTF02(3pp) (2013) 
 
 
2304-1862/2013/2(1)01NTF02(3) 01NTF02-1  2013 Sumy State University 
Nanostructured Films of Semiconducting Molybdenum Disulfide Obtained  
Through Exfoliation-Restacking Method 
 
A.S. Golub1,*, N.D. Lenenko1, E.P. Krinichnaya2, O.P. Ivanova2, I.V. Klimenko2, T.S. Zhuravleva2,† 
 
1 A.N. Nesmeyanov Institute of Organoelement Compounds, Russian Academy of Sciences, ul. Vavilova 28, Moscow 
119991, Russia 
2 N.M. Emanuel Institute of Biochemical Physics, Russian Academy of Sciences, ul. Kosygina 4, Moscow 119334, 
Russia 
 
(Received 24 April 2013; published online 29 August 2013) 
 
Preparing MoS2 films in mild conditions, using deposition of suspended MoS2 nanoplatelets onto the 
substrate is described. For this purpose, the nanosized MoS2 particles were obtained via restacking of MoS2 
single layers produced by chemical exfoliation of bulk MoS2 crystals in liquid media. X-Ray diffraction 
study of the films showed that the basal planes of MoS2 crystallites are mainly oriented in the plane paral-
lel to the substrate. Atomic force microscopy examination revealed the dependence of the film surface to-
pography, as well as the roughness characteristics on the film thickness, which varied in the range of 0.03-
2.2 m. Optical absorption spectra of the obtained MoS2 films were found to contain the same absorption 
bands as the spectra of thin natural MoS2 single crystals. Dark conductivity of the films was determined to 
be ~ 10–3 S∙сm–1 at 300 K. The present MoS2 films were found to be photosensitive in the range of 300-800 
nm, providing the maximum value of photocurrent under photoexcitation at ~ 440 nm.  
 
Keywords: Molybdenum Disulfide, Exfoliation, Thin Films, Surface Structure, Photoconductivity. 
 
 PACS number(s): 68.55.J-. 73.50.Pz, 81.15.Lm 
 
 
                                               
* golub@ineos.ac.ru 
† zhur@deom.chph.ras.ru 
1. INTRODUCTION 
 
Thin-film materials are widely used in modern elec-
tronics. The problems of obtaining the semiconductors 
in the film form in mild conditions is thus the subject of 
current interest. It can be a major challenge to find 
conditions for preparing the films from insoluble and 
non-volatile compounds like molybdenum disulfide. 
Indeed, MoS2 is a semiconducting material, which was 
shown to hold promise for designing TFTs [1], photoac-
tive electrodes [2] and solar cells characterizing by a 
high solar-to-electric energy conversion efficiency [3]. 
The material is available in nature as a mineral, photo-
corrosion-resistant and non-toxic. However, the meth-
ods previously tested for the synthesis of MoS2 films, 
including CVD and bath deposition techniques, electro-
deposition, and sulfiding the precursors, often results 
in law-ordered films or requires the high temperature 
conditions [4].  
 
2. FILMS ASSEMBLING 
 
An approach here presented implies the use of pecu-
liarities of MoS2 crystal structure to obtain the colloid-
like fragments of the crystals in liquid media and to 
assemble then these fragments in the films on the sub-
strate [5, 6]. 
From the structural standpoint, MoS2 is a layered 
compound containing triatomic-thick S-Mo-S layers 
bound up each to other by van-der-vaals bonds in the 
bulk crystals. Reductive lithiation of bulk crystalline 
MoS2 and following hydration of the resulting layered 
compound Li+(MoS2)- was shown to produce the liquid-
phase dispersions containing (MoS2)x- single layers 
separated by solvent molecules: [Li+ + (MoS2)x- + (1 -
 x)OH-]aq [7]. These single layers can further be ar-
ranged in the ultra-dispersed neutral MoS2 particles, 
containing from several to several tens monolayers of 
MoS2, as evidenced by HRTEM [8]. Because of two-
dimensional character of MoS2 structure, the produced 
particles are anisotropic in shape and their lateral di-
mensions are larger than the side ones. Such morphol-
ogy should favor uniform orientation of the particles 
depositing on the substrates and facilitate forming the 
films.  
The films with various thicknesses (d  0.03–2.2 
μm) were prepared by layer-by-layer putting the sus-
pensions of dispersed MoS2 particles in organic solvents 
onto the polished quartz plates of the size of 
2.0 x 2.5 cm. Then, the films were dried at 20ºC and 
heated at 150ºC in vacuum for 2 hours. For electrical 
and photoelectrical measurements, surface Cu elec-
trodes  of the width and length of 1 and 15-18 mm, re-
spectively, were deposited by vacuum sputtering onto 
the films within the distance of 2 mm from each other. 
 
3. AFM AND XRD CHARACTERIZATION 
 
Powder X-Ray diffraction study of MoS2 films ob-
tained from suspensions showed  that their patterns 
contain broad reflections of 00l series, which dominates 
over the other reflections (Fig. 1). This is consistent 
with preferable orientation of the basal surfaces of 
MoS2 particles in the plane parallel to the substrate 
with the crystallographic c-axis of the particles being 
perpendicular to the substrate. Drying the films at 
150ºC in vacuum leads to noticeable narrowing of the 
00l reflections, that is a sign of increasing the crystal-
 A.S. GOLUB, N.D. LENENKO, E.P. KRINICHNAYA, O.P. IVANOVA ET AL. PROC. NAP 2, 01NTF02 (2013) 
 
 
01NTF02-2 
linity and uniformity of interlayer distances in the par-
ticles constituting the film. Since this treatment doesn’t 
lead to increase of 100 and 10l reflections in intensity, 
one can conclude that structurization of the particles in 
the films is not accompanied by their misalignment 
with respect to the substrate. 
 
10 20 30 40 50 60
c
b
102
101
110
103
105
100
006
002
006
006
002
002
In
te
n
s
it
y
2, degrees
a
 
 
Fig. 1 – XRD patterns of the prepared MoS2 film after deposi-
tion onto substrate (a) and after drying at 150oC (b) as well as 
the pattern of crystalline MoS2 (c). 
 
AFM scans were performed to examine the surface 
topography of the obtained films. Fig. 2 shows 3D im-
ages of the surface structure obtained for the films of 
different thickness (0.03, 0.06 and 1.3 µm), using rela-
tively large surface areas of about 14x14 µm for the 
analysis. It can be seen from these data that, on in-
creasing the thickness, the surface of the films more 
and more deviates from the flat geometry and contain 
more step-layer pyramid-like nanocrystalline elements, 
possessing clearly pronounced faces and differing from 
each other in sizes. In the film with thickness of 1.3 
µm, these elements, reaching 560 nm in height, cover 
all the surface. The tendency of surface microrelief to 
be more developed for the thicker films is consistent 
with the observed changes in roughness parameters of 
the films, including the peak to peak value (Rmax), the 
average (Ra) and root mean square (Rq) roughness. For 
all these characteristics, an abrupt increase of the cor-
responding value upon changing the thickness from 
d  0.03 to d  0.43 m is followed by a gradual ap-
proaching the plateau at d > 0.43 m.  
 
4. FORMATION MECHANISM OF FILMS POLY-
CRYSTALLINE STRUCTURE 
 
Basing on the results of AFM and XRD studies, the 
following mechanism of the formation of these poly-
crystalline films can be proposed. The MoS2 nanoparti-
cles formed in restacking process contain several (3-8 
and more) S-Mo-S layers, as follows from the data ob-
tained previously [8]. Upon deposition of the first por-
tions of suspension onto the smooth surface, the flat 
shape of MoS2 particles promotes their parallel orienta-
tion with respect to the substrate plane. However, dis-
ordering of the packing is growing up on further depo-
sitions. It is caused by the nonequivalence of the thick-
ness of the particles coming from the suspensions, so 
that the surface of the first deposited layer cannot be 
an ideal smooth substrate for the next layer. The 
“scarps” formed in the relief hamper deposition of the 
subsequent nanoparticles in the orientation parallel to 
the substrate. Moreover, the side surface of the “scarps” 
becomes the places for attaching the particles in the 
inclined orientation. So these side steps become the 
centers of “crystallization”, which provides the growth 
of differently oriented nanocrystallites. This results in 
formation of densely packed step-layered structures, 
and their orientation with respect to the substrate 
plane becomes more and more chaotic with increasing 
the films thickness. 
 
1.371 μm (Z)
0.617 μm (Z)
1.334 μm (Z)
14 μm (X)
14 μm (Y)
a
b
c
 
 
Fig. 2 – 3D images of surface topography of MoS2 films. The 
film thickness is 0.03 µm (a), 0.06 µm (b) and 1.3 µm (c). 
 
5. ABSORPTION SPECTRA, DARK- AND PHO-
TO- CONDUCTIVITY OF THE FILMS 
 
Optical absorption spectra of dispersed MoS2 films 
assembled by exfoliation-restacking method and having 
the different thickness (30-170 nm) were measured. 
According to the obtained data, the spectra are in gen-
eral similar to the spectrum of single-crystalline MoS2 
and show the thresholds of absorption bands begining 
at ~700, ~500 and ~350 nm, corresponding to the 1-st, 
2-nd and 3-rd band. (Fig. 3). However, the fine struc-
ture of absorption bands with the maxima excitonic in 
nature is less pronounced in the spectra of the films.  
Decreasing the films thickness to 30 nm does not 
change the spectrum shape, but affects the value of 
optical absorption. 
 NANOSTRUCTURED FILMS OF SEMICONDUCTING MOLYBDENUM… PROC. NAP 2, 01NTF02 (2013) 
 
 
01NTF02-3 
300 400 500 600 700 800
0,0
0,5
1,0
1,5
2,0
0,0
0,5
1,0single crystal
170 nm
120 nm
D

, nm
30 nm
 D

 
 
 
Fig. 3 - Absorption spectra of the dispersed films and single 
crystal of MoS2. 
300 400 500 600 700 800
1
2
3
4
5
6
 ,  nm
I p
h
 /
P
, 
 A
 /
 W
 
 
 
Fig. 4 - Photocurrent spectrum measured in the MoS2 film 
and corrected for the light intensity (d  0.043 μm, applied 
voltage U  15 V). 
 
Dark conductivity of the films with the thickness of 
0.12-2.2 μm measured using surface-type electrodes 
was found to be ~ 10–3 S∙сm–1 at room temperature. 
Similarly to single-crystalline specimens of MoS2, 
the present films were found to exhibit photoconduct-
ing properties. Spectral dependence of the photocurrent 
corrected for the excited light intensity is presented in 
Fig. 4. It can be seen that photocurrent reaches a max-
imum at ~ 440 nm and its position roughly coincides 
with the position of the second band in the absorption 
spectra. It means that the processes attributed to this 
absorption band (direct transitions from the top of the 
valence band and deeper levels into the conduction 
band) are also responsible for the photocurrent. 
Thus, soft chemistry method of the preparation of 
thin semiconducting molybdenum disulfide films using 
nanocrystalline MoS2 has been developed. Contrary to 
the usual high-temperature techniques, the described 
preparation proceeds at room temperature and is fol-
lowed by annealing to 150oC. The obtained results are 
expected to be of interest for researchers dealing with 
films of various layered structure materials. 
 
ACKNOWLEDGMENTS 
 
A.S.G. and N.D.L. acknowledge the support of the 
Russian Foudation for Basic Researches (project No 11-
03-00922a).
 
 
REFERENCES 
 
1. D. Lembke, A. Kis, ACS Nano 6, 10070 (2012). 
2. F.A. Frame, F.E. Osterloh, J. Phys. Chem. C 114, 10628 
(2010). 
3. C.-J. Liu,  S.-Y. Tai,  S.-W. Chou,  Y.-C. Yu,  K.-D. Chang,  
S. Wang,  F.S.-S. Chien,  J.-Y. Lin, T.-W. Lin. J. Mater. 
Chem. 22, 21057 (2012).  
4. N. Barreau, J.C. Bernede, J. Phys. D: Appl. Phys. 35, 1197 
(2002). 
5. T.S. Zhuravleva, E.P. Krinichnaya, O.P. Ivanova, 
I.V. Klimenko, A.S. Golub, N.D.°Lenenko, I.A. Misurkin, 
S.V. Titov, Thin Solid Films 520, 3125 (2012). 
6. I.V. Klimenko, A.S. Golub, T.S. Zhuravleva, N.D. Lenenko, 
Yu.N. Novikov, Russ. J. Phys. Chem. A 83, 276 (2009). 
7. R.A. Gordon, D. Yang, E.D. Crozier, D.T. Jiang, 
R.F. Frindt, Phys. Rev. B 65, 125407 (2002). 
8. A.S. Golub, V.I. Zaikovskii, N.D. Lenenko, M. Danot, 
Yu.N. Novikov, Russ. Chem. Bull. 53, 1914 (2004). 
 


English

Nanostructured Films of Semiconducting Molybdenum Disulfide Obtained Through Exfoliation-Restacking Method

Electronic Sumy State University Institutional Repository

PROCEEDINGS OF THE INTERNATIONAL CONFERENCE  NANOMATERIALS: APPLICATIONS AND PROPERTIES Vol. 2 No 1, 01NTF02(3pp) (2013)   2304-1862/2013/2(1)01NTF02(3) 01NTF02-1  2013 Sumy State University Nanostructured Films of Semiconducting Molybdenum Disulfide Obtained  Through Exfoliation-Restacking Method  A.S. Golub1,*, N.D. Lenenko1, E.P. Krinichnaya2, O.P. Ivanova2, I.V. Klimenko2, T.S. Zhuravleva2,†  1 A.N. Nesmeyanov Institute of Organoelement Compounds, Russian Academy of Sciences, ul. Vavilova 28, Moscow 119991, Russia 2 N.M. Emanuel Institute of Biochemical Physics, Russian Academy of Sciences, ul. Kosygina 4, Moscow 119334, Russia  (Received 24 April 2013; published online 29 August 2013)  Preparing MoS2 films in mild conditions, using deposition of suspended MoS2 nanoplatelets onto the substrate is described. For this purpose, the nanosized MoS2 particles were obtained via restacking of MoS2 single layers produced by chemical exfoliation of bulk MoS2 crystals in liquid media. X-Ray diffraction study of the films showed that the basal planes of MoS2 crystallites are mainly oriented in the plane paral-lel to the substrate. Atomic force microscopy examination revealed the dependence of the film surface to-pography, as well as the roughness characteristics on the film thickness, which varied in the range of 0.03-2.2 m. Optical absorption spectra of the obtained MoS2 films were found to contain the same absorption bands as the spectra of thin natural MoS2 single crystals. Dark conductivity of the films was determined to be ~ 10–3 S∙сm–1 at 300 K. The present MoS2 films were found to be photosensitive in the range of 300-800 nm, providing the maximum value of photocurrent under photoexcitation at ~ 440 nm.   Keywords: Molybdenum Disulfide, Exfoliation, Thin Films, Surface Structure, Photoconductivity.   PACS number(s): 68.55.J-. 73.50.Pz, 81.15.Lm                                                  * golub@ineos.ac.ru † zhur@deom.chph.ras.ru 1. INTRODUCTION  Thin-film materials are widely used in modern elec-tronics. The problems of obtaining the semiconductors in the film form in mild conditions is thus the subject of current interest. It can be a major challenge to find conditions for preparing the films from insoluble and non-volatile compounds like molybdenum disulfide. Indeed, MoS2 is a semiconducting material, which was shown to hold promise for designing TFTs [1], photoac-tive electrodes [2] and solar cells characterizing by a high solar-to-electric energy conversion efficiency [3]. The material is available in nature as a mineral, photo-corrosion-resistant and non-toxic. However, the meth-ods previously tested for the synthesis of MoS2 films, including CVD and bath deposition techniques, electro-deposition, and sulfiding the precursors, often results in law-ordered films or requires the high temperature conditions [4].   2. FILMS ASSEMBLING  An approach here presented implies the use of pecu-liarities of MoS2 crystal structure to obtain the colloid-like fragments of the crystals in liquid media and to assemble then these fragments in the films on the sub-strate [5, 6]. From the structural standpoint, MoS2 is a layered compound containing triatomic-thick S-Mo-S layers bound up each to other by van-der-vaals bonds in the bulk crystals. Reductive lithiation of bulk crystalline MoS2 and following hydration of the resulting layered compound Li+(MoS2)- was shown to produce the liquid-phase dispersions containing (MoS2)x- single layers separated by solvent molecules: [Li+ + (MoS2)x- + (1 - x)OH-]aq [7]. These single layers can further be ar-ranged in the ultra-dispersed neutral MoS2 particles, containing from several to several tens monolayers of MoS2, as evidenced by HRTEM [8]. Because of two-dimensional character of MoS2 structure, the produced particles are anisotropic in shape and their lateral di-mensions are larger than the side ones. Such morphol-ogy should favor uniform orientation of the particles depositing on the substrates and facilitate forming the films.  The films with various thicknesses (d  0.03–2.2 μm) were prepared by layer-by-layer putting the sus-pensions of dispersed MoS2 particles in organic solvents onto the polished quartz plates of the size of 2.0 x 2.5 cm. Then, the films were dried at 20ºC and heated at 150ºC in vacuum for 2 hours. For electrical and photoelectrical measurements, surface Cu elec-trodes  of the width and length of 1 and 15-18 mm, re-spectively, were deposited by vacuum sputtering onto the films within the distance of 2 mm from each other.  3. AFM AND XRD CHARACTERIZATION  Powder X-Ray diffraction study of MoS2 films ob-tained from suspensions showed  that their patterns contain broad reflections of 00l series, which dominates over the other reflections (Fig. 1). This is consistent with preferable orientation of the basal surfaces of MoS2 particles in the plane parallel to the substrate with the crystallographic c-axis of the particles being perpendicular to the substrate. Drying the films at 150ºC in vacuum leads to noticeable narrowing of the 00l reflections, that is a sign of increasing the crystal- A.S. GOLUB, N.D. LENENKO, E.P. KRINICHNAYA, O.P. IVANOVA ET AL. PROC. NAP 2, 01NTF02 (2013)   01NTF02-2 linity and uniformity of interlayer distances in the par-ticles constituting the film. Since this treatment doesn’t lead to increase of 100 and 10l reflections in intensity, one can conclude that structurization of the particles in the films is not accompanied by their misalignment with respect to the substrate.  10 20 30 40 50 60cb102101110103105100006002006006002002Intensity2, degreesa  Fig. 1 – XRD patterns of the prepared MoS2 film after deposi-tion onto substrate (a) and after drying at 150oC (b) as well as the pattern of crystalline MoS2 (c).  AFM scans were performed to examine the surface topography of the obtained films. Fig. 2 shows 3D im-ages of the surface structure obtained for the films of different thickness (0.03, 0.06 and 1.3 µm), using rela-tively large surface areas of about 14x14 µm for the analysis. It can be seen from these data that, on in-creasing the thickness, the surface of the films more and more deviates from the flat geometry and contain more step-layer pyramid-like nanocrystalline elements, possessing clearly pronounced faces and differing from each other in sizes. In the film with thickness of 1.3 µm, these elements, reaching 560 nm in height, cover all the surface. The tendency of surface microrelief to be more developed for the thicker films is consistent with the observed changes in roughness parameters of the films, including the peak to peak value (Rmax), the average (Ra) and root mean square (Rq) roughness. For all these characteristics, an abrupt increase of the cor-responding value upon changing the thickness from d  0.03 to d  0.43 m is followed by a gradual ap-proaching the plateau at d > 0.43 m.   4. FORMATION MECHANISM OF FILMS POLY-CRYSTALLINE STRUCTURE  Basing on the results of AFM and XRD studies, the following mechanism of the formation of these poly-crystalline films can be proposed. The MoS2 nanoparti-cles formed in restacking process contain several (3-8 and more) S-Mo-S layers, as follows from the data ob-tained previously [8]. Upon deposition of the first por-tions of suspension onto the smooth surface, the flat shape of MoS2 particles promotes their parallel orienta-tion with respect to the substrate plane. However, dis-ordering of the packing is growing up on further depo-sitions. It is caused by the nonequivalence of the thick-ness of the particles coming from the suspensions, so that the surface of the first deposited layer cannot be an ideal smooth substrate for the next layer. The “scarps” formed in the relief hamper deposition of the subsequent nanoparticles in the orientation parallel to the substrate. Moreover, the side surface of the “scarps” becomes the places for attaching the particles in the inclined orientation. So these side steps become the centers of “crystallization”, which provides the growth of differently oriented nanocrystallites. This results in formation of densely packed step-layered structures, and their orientation with respect to the substrate plane becomes more and more chaotic with increasing the films thickness.  1.371 μm (Z)0.617 μm (Z)1.334 μm (Z)14 μm (X)14 μm (Y)abc  Fig. 2 – 3D images of surface topography of MoS2 films. The film thickness is 0.03 µm (a), 0.06 µm (b) and 1.3 µm (c).  5. ABSORPTION SPECTRA, DARK- AND PHO-TO- CONDUCTIVITY OF THE FILMS  Optical absorption spectra of dispersed MoS2 films assembled by exfoliation-restacking method and having the different thickness (30-170 nm) were measured. According to the obtained data, the spectra are in gen-eral similar to the spectrum of single-crystalline MoS2 and show the thresholds of absorption bands begining at ~700, ~500 and ~350 nm, corresponding to the 1-st, 2-nd and 3-rd band. (Fig. 3). However, the fine struc-ture of absorption bands with the maxima excitonic in nature is less pronounced in the spectra of the films.  Decreasing the films thickness to 30 nm does not change the spectrum shape, but affects the value of optical absorption.  NANOSTRUCTURED FILMS OF SEMICONDUCTING MOLYBDENUM… PROC. NAP 2, 01NTF02 (2013)   01NTF02-3 300 400 500 600 700 8000,00,51,01,52,00,00,51,0single crystal170 nm120 nmD, nm30 nm D   Fig. 3 - Absorption spectra of the dispersed films and single crystal of MoS2. 300 400 500 600 700 800123456 ,  nmI ph /P,  A / W   Fig. 4 - Photocurrent spectrum measured in the MoS2 film and corrected for the light intensity (d  0.043 μm, applied voltage U  15 V).  Dark conductivity of the films with the thickness of 0.12-2.2 μm measured using surface-type electrodes was found to be ~ 10–3 S∙сm–1 at room temperature. Similarly to single-crystalline specimens of MoS2, the present films were found to exhibit photoconduct-ing properties. Spectral dependence of the photocurrent corrected for the excited light intensity is presented in Fig. 4. It can be seen that photocurrent reaches a max-imum at ~ 440 nm and its position roughly coincides with the position of the second band in the absorption spectra. It means that the processes attributed to this absorption band (direct transitions from the top of the valence band and deeper levels into the conduction band) are also responsible for the photocurrent. Thus, soft chemistry method of the preparation of thin semiconducting molybdenum disulfide films using nanocrystalline MoS2 has been developed. Contrary to the usual high-temperature techniques, the described preparation proceeds at room temperature and is fol-lowed by annealing to 150oC. The obtained results are expected to be of interest for researchers dealing with films of various layered structure materials.  ACKNOWLEDGMENTS  A.S.G. and N.D.L. acknowledge the support of the Russian Foudation for Basic Researches (project No 11-03-00922a).  REFERENCES  1. D. Lembke, A. Kis, ACS Nano 6, 10070 (2012). 2. F.A. Frame, F.E. Osterloh, J. Phys. Chem. C 114, 10628 (2010). 3. C.-J. Liu,  S.-Y. Tai,  S.-W. Chou,  Y.-C. Yu,  K.-D. Chang,  S. Wang,  F.S.-S. Chien,  J.-Y. Lin, T.-W. Lin. J. Mater. Chem. 22, 21057 (2012).  4. N. Barreau, J.C. Bernede, J. Phys. D: Appl. Phys. 35, 1197 (2002). 5. T.S. Zhuravleva, E.P. Krinichnaya, O.P. Ivanova, I.V. Klimenko, A.S. Golub, N.D.°Lenenko, I.A. Misurkin, S.V. Titov, Thin Solid Films 520, 3125 (2012). 6. I.V. Klimenko, A.S. Golub, T.S. Zhuravleva, N.D. Lenenko, Yu.N. Novikov, Russ. J. Phys. Chem. A 83, 276 (2009). 7. R.A. Gordon, D. Yang, E.D. Crozier, D.T. Jiang, R.F. Frindt, Phys. Rev. B 65, 125407 (2002). 8. A.S. Golub, V.I. Zaikovskii, N.D. Lenenko, M. Danot, Yu.N. Novikov, Russ. Chem. Bull. 53, 1914 (2004).  

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Nanostructured Films of Semiconducting Molybdenum Disulfide Obtained Through Exfoliation-Restacking Method

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