Dusch, Y.

Giordano, Stefano

Logunov, M. V.

Mathurin, T.

Nikitov, S. A.

Osokin, S. A.

Pernod, and P.

Temiryazev, A. G.

Temiryazeva, M. P.

Tiercelin, N.

English

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DOMAIN WALLS IN MAGNETO-ELASTIC
HETEROSTRUCTURES: MODELING AND
EXPERIMENT
M. V. Logunov, S. A. Nikitov, S. A. Osokin, A. G. Temiryazev, M. P.
Temiryazeva, Stefano Giordano, T. Mathurin, Y. Dusch, N. Tiercelin, P.
Pernod
To cite this version:
M. V. Logunov, S. A. Nikitov, S. A. Osokin, A. G. Temiryazev, M. P. Temiryazeva, et al.. DO-
MAIN WALLS IN MAGNETO-ELASTIC HETEROSTRUCTURES: MODELING AND EXPERI-
MENT. International ￿onference ”Mathematical modeling in materials science of electronic compo-
nents” (￿￿MSEC-2019), Oct 2019, Moscou, Russia. pp.139-140. ￿hal-02338025￿
DOMAIN WALLS IN MAGNETO-ELASTIC HETEROSTRUCTURES:  
MODELING AND EXPERIMENT 
M. V. Logunov1,2, S. A. Nikitov1,2,3, S. A. Osokin1,2,3, A. G. Temiryazev2,4, M. P. Temiryazeva2,4, 
S. Giordano2,5, T. Mathurin2,5, Y. Dusch2,5, N. Tiercelin2,5, and P. Pernod2,5 
1Kotel’nikov Institute of Radio Engineering and Electronics of RAS 
2LIA LICS / LEMAC 
3Moscow Institute of Physics and Technology (State University) 
4Fryazino branch of Kotel’nikov Institute of Radio Engineering and Electronics of RAS  
5Univ. Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520 IEMN 
Domain walls, skyrmions and other nanoscale spin structures are considered as key elements 
of future 3D nanodevices of information processing, including nonvolatile memory devices [1]. 
Interest in such structures is also due to the phenomenon of new physical effects associated 
with nanosize, topology and chirality of magnetic elements. In turn, magnetic nanostructures 
with controlled magnetoelastic properties are promising for creating information storage and 
processing devices with record energy consumption [2-4], up to tens of attojoules per one 
elementary operation to change the state of nanoelement’s magnetization. 
The possibility to manipulate domain walls in magnetoelastic nanostripes by means of uniform 
mechanical stresses has been numerically demonstrated [5]. Elastic stresses induced by the 
piezoelectric layer are used to change the magnetic state of the nanostripe (Fig., and.) In this 
case, the domain-wall velocity of the same order of magnitude as when exposed to magnetic 
fields or spin-polarized currents is achieved, and energy consumption is significantly reduced. 
This paper presents the results of modeling and experimental study of the domain structure and 
magnetization reversal processes of magneto-elastic parabolic-shaped nanostripes (Fig., b-d). 
Multilayered magnetostrictive films of TbCo2/FeCo composition were deposited onto 
piezoelectric PMN-PT substrates by RF sputtering using a Leybold Z550 equipment [6]. The 
deposition was made under a magnetic field generated by permanent magnets in order to induce 
a magnetic easy axis anisotropy in the desired direction in the plane of the multilayer film. 
Then, micro- and nanostructures of various shapes were formed in the films by lithography for 
experimental study of magnetization distribution, processes of magnetization reversal, 
formation and movement of domain walls in the films. 
  
                           a                                  b          c                      d                                e 
Fig. Model (a-c) and image (d-e, magnetic force microscopy) of the domain structure in 
magnetoelastic nanostripes of variable width. 
It is shown that in the initial state in the nanostripe, depending on the prehistory of the 
magnetization/demagnetization of the nanostripe, there are two variants for the formation of an 
equilibrium magnetic structure – with asymmetric (Fig. b, d) or symmetrical (Fig. b, e) direction 
of the magnetization vectors at the edges of the nanostripe and, accordingly, with a state close 
to the monodomain, or split of the parabolic-shaped nanostripe into domains. The symmetry 
breaking of the stable magnetization states in the nanostripe can be realized by a static magnetic 
field applied perpendicular to the easy axis of the ferromagnetic. Further change of 
magnetization states allows their manipulation by means of homogeneous mechanical effects 
induced by the application of an electric field to the piezoelectric substrate. 
1. A. Fernandez-Pacheco et al. Nature Comm. 8, 15756 (2017). 
2. N. Tiercelin et al. Appl. Phys. Lett. 99, 192507 (2011). 
3. A. A. Bukharaev et al. Phys. Usp. 61, 1175 (2018). 
4. N. D’Souza et al. Nanotechnology 29, 442001 (2018). 
5. T. Mathurin et al. Phys. Rev. B 95, 140405(R) (2017). 
6. Y. Dusch et al. J. Appl. Phys. 113, 17C719 (2013). 
 


DOMAIN WALLS IN MAGNETO-ELASTIC HETEROSTRUCTURES:MODELING AND EXPERIMENT

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DOMAIN WALLS IN MAGNETO-ELASTIC HETEROSTRUCTURES:MODELING AND EXPERIMENT

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