'Periodica Polytechnica Budapest University of Technology and Economics'
Abstract
The technique of sputter depth profiling by means of secondary ion mass spectrometry
of samples with high resistivity is reviewed. As examples we discuss optical waveguides made
in lithium niobate by titanium indiffusion and implantation and also yttrium iron garnet
waveguides grown by liquid phase epitaxy on gadolinium gallium garnet. Depth profiling of
these waveguide structures has been performed and the necessary precautions to prevent
charging by the primary ion beam are discussed. In some cases, coating with a metallic layer
is adequate, but a more universal method is charge neutralization by an additional electron
beam