Darby, B.L.

Doyle, B.L.

Hansen, Ole

Jones, K.S.

Kontos, A.

Lin, R.

Nielsen, P.F.

Petersen, Dirch Hjorth

Yates, B.R.

The residual implanted dose of ultra-shallow B+ implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23% due to ion backscattering for 2 keV implants in Ge. The electrical characterization of ultra-shallow B+ implants at 2 keV to a dose of 5.0×1014 cm-2 at beam currents ranging from 0.4 to 6.4 mA has been studied using micro Hall effect measurements after annealing at 400°C for 60 s. It has been shown that the sheet number increases with beam current across the investigated range with electrical activation being 76% higher at 6.4 mA as compared to 0.4mA. However, at 6.4 mA, the electrically active fraction remained low at 11.4%. Structural characterization revealed that the implanted region remained crystalline and amorphization is not able to explain the increased activation. The results suggest the presence of a stable B:Ge cluster whose formation is altered by point defect recombination during high flux implantation which results in increased B activation. © The Electrochemical Society.</p

Online Research Database In Technology

Effect of B+ Flux on the electrical activation of ultra-shallow B+ implants in Ge

The residual implanted dose of ultra-shallow B+ implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23% due to ion backscattering for 2 keV implants in Ge. The electrical characterization of ultra-shallow B+ implants at 2 keV to a dose of 5.0×1014 cm-2 at beam currents ranging from 0.4 to 6.4 mA has been studied using micro Hall effect measurements after annealing at 400˚C for 60 s. It has been shown that the sheet number increases with beam current across the investigated range with electrical activation being 76% higher at 6.4 mA as compared to 0.4mA. However, at 6.4 mA, the electrically active fraction remained low at 11.4%. Structural characterization revealed that the implanted region remained crystalline and amorphization is not able to explain the increased activation. The results suggest the presence of a stable B:Ge cluster whose formation is altered by point defect recombination during high flux implantation which results in increased B activation.</jats:p

Bradley R Yates

Blake L Darby

Dirch H Petersen

Ole Hansen

Rong Lin

Peter F Nielsen

Barney L Doyle

Alex Kontos

Kevin S Jones

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ECS Transactions

Effect of B+ Flux on the Electrical Activation of Ultra-Shallow B+ Implants in Ge

http://orbit.dtu.dk/ws/files/70012563/ECS_Trans._2013_Yates_543_9.pdf

Effect of B<sup>+</sup> Flux on the electrical activation of ultra-shallow B<sup>+</sup> implants in Ge

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