Akasaki, Isamu

Chen, Yuntian

Fadil, Ahmed

Iida, Daisuke

Iwaya, Motoaki

Kamiyama, Satoshi

Kopylov, Oleksii

Ou, Haiyan

Ou, Yiyu

Takeuchi, Tetsuya

Online Research Database In Technology

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Downloaded from orbit.dtu.dk on: Dec 19, 2017Enhanced internal quantum efficiency of green emission GaInN/GaN multiple quantumwells by surface plasmon couplingIida, Daisuke; Chen, Yuntian; Ou, Yiyu; Fadil, Ahmed; Kopylov, Oleksii; Iwaya, Motoaki; Takeuchi,Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Ou, HaiyanPublication date:2013Link back to DTU OrbitCitation (APA):Iida, D., Chen, Y., Ou, Y., Fadil, A., Kopylov, O., Iwaya, M., ... Ou, H. (2013). Enhanced internal quantumefficiency of green emission GaInN/GaN multiple quantum wells by surface plasmon coupling. Abstract from2013 JSAP-MRS Joint Symposia, Kyoto, Japan.Enhanced internal quantum efficiency of green emission GaInN/GaN multiple quantum wells by surface plasmon coupling  Daisuke Iida1, Yuntian Chen2, Yiyu Ou2, Ahmed Fadil2, Oleksii Kopylov2, Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Isamu Akasaki1,3, and Haiyan Ou2  1 Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi Tempaku, Nagoya 468-8502, Japan.  E-mail: dft0tfi16@meijo-u.ac.jp 2 DTU Fotonik, Technical University of Denmark, Ørsteds Plads 343, Kgs. Lyngby 2800, Denmark 3 Akasaki Research Center, Nagoya University, Furo-cho Chikusa, Nagoya 464-8603, Japan   1. Introduction  The GaInN-material based light-emitting diodes (LEDs) technology appears to be an excellent candidate in sol-id-state platform. Improving the LEDs performance within the green gap is challenging, and is also a major focus in the research efforts of GaInN-based LEDs. The c-plane growth of LEDs have a large piezoelectric field in quantum well (QW) due to quantum confined Stark effect (QCSE)[1]. The large piezoelectric field is one of the most critical factors which limit internal quantum efficiency (IQE) in the green gap. In this study, we investigated the enhancement of IQE of green emission QW with coupling the localized surface plasmon (LSP)[2]. Surface plasmon channel is very fast recombination process compared with original path[2]. It is very expected the technique for en-hancing IQE. Then, we defined the IQE of GaInN/GaN QWs with LED structure by temperature dependence of photoluminescence (PL).   2. Experiment and results LED structures were grown by metalorganic vapor phase epitaxy (MOVPE) in a horizontal flow reactor. This LED structure has optimized thin p-GaN layer for coupling LSP to QWs, with expects to enhance the light emission of QWs with coupling LSP. The PL measurement setup could turn the output power density from 1.1 to 756 W/cm2. PL meas-urement was carried out with the excitation and collection via the backside of the polished sapphire substrate. The Ag nanoparticles (AgNPs) are fabricated by electron beam evaporation and thermal annealing. Desirable LSP frequen-cies are able to obtain by adjusting the thickness of the de-posited Ag thin-film.  Figure 1 shows the estimation of IQE with various excita-tion power densities by temperature dependence of PL. We defined the IQE by the PL intensity ratio at room and low temperatures. It indicates that AgNPs are significantly af-fected the IQE enhancement of the LEDs by LSP coupling. It found that the IQE is improved from 19.4 to 26.2, 26.5, and 44.1 % using AgNPs (4 nm), AgNPs (9.5 nm), and AgNPs (17 nm) at 756 W/cm2, respectively. The IQE en-hancement is attributed to a fast radiative recombination rate through surface plasmon channel.        3. Conclusions We investigated that the IQE of GaInN/GaN QWs LEDs with AgNPs is enhanced by QW-LSP coupling. We achieved that the IQE is improved from 19.4 to 44.1% us-ing AgNPs (17 nm) at 756 W/cm2. This technique expects to boost efficiency in an electrical driven.   Acknowledgements This work was partially supported by a Strategic Young Researcher Overseas Visits Program for Accelerating Brain Circulation from Japan Society for the Promotion of Sci-ence, the Program for the Strategic Research Foundation at Private Universities, 2012–2016, supported by the Ministry of Education, Culture, Sports, Science and Technology, and the Scandinavia-Japan Sasakawa Foundation. Y. Chen acknowledges financial support from the Danish Research Council for Technology and Production Sciences (grant numbers 10093787).  References [1] T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys. 36, (1997) L382 [2] K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, A. Mukai, A. Scherer, Nature Materials 3, (2004), 601. Figure 1. Estimated IQE as function of excitation power density. Ag deposition thicknesses are (a) 4nm, (b) 9.5nm and (c) 17nm, respectively. 100 101 102 1030102030405060Excitation power density (W/cm2)  Internal quantum efficiency,I RT/ILT x 100 (%)Sample (a)Sample (b)Sample (c)w/o AgNPsλ = ~530nm@RT

Enhanced internal quantum efficiency of green emission GaInN/GaN multiple quantum wells by surface plasmon coupling

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Enhanced internal quantum efficiency of green emission GaInN/GaN multiple quantum wells by surface plasmon coupling

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