The Impact of Externally Applied Mechanical Stress on Analog and RF Performances of SOI MOSFETs, Journal of Telecommunications and Information Technology, 2009, nr 4

Abstract

This paper presents a complete study of the impact of mechanical stress on the performance of SOI MOSFETs. This investigation includes dc, analog and RF characteristics. Parameters of a small-signal equivalent circuit are also ex- tracted as a function of applied mechanical stress. Piezoresistance coefficientis shown to be a key element in describing the enhancement in the characteristics of the device due to mechanical stress