Layered tetrel pnictides have shown promise as thermoelectrics (TEs) due to their anisotropic crystal structure and weak van der Waals interactions between layers. The binary GeAs is a p-type semiconductor with a narrow indirect bandgap of 0.57 eV and a high Seebeck coefficient (∼250 μV/K at 300 K). This work probes the limits of the aliovalent substitutions of GeAs to modify charge carrier concentration. GaxGe1-xAs (x = 0.005, 0.01, and 0.02) and GeAs1-ySey (y = 0.01, 0.02, 0.03, and 0.05) samples were synthesized to study the structure-property relationships in this system. Hole doping of GeAs via Ga-substitution increases carrier concentration resulting in the decrease in both resistivity and Seebeck coefficient. Se-substituted samples show more complex behavior related to defect chemistry. Overall, the thermoelectric power factor (S2/ρ) was significantly enhanced (up to 89%) for Ga0.005Ge0.995As as compared to pristine GeAs
