We report the growth and magnetic characterizations of La0.7Ba0.3MnO3 and La0.7Sr0.3MnO3 films on SrTiO3-buffered Si (100) and Si (111) substrates by pulsed-laser deposition. The structural studies show the epitaxial nature of the films. The microscopic studies show that the films consist of nanocrystalline particles. All films display sharp magnetic and electrical transitions associated with the colossal magnetoresistance behavior at and above room temperature, illustrating the superior quality of the films

Dadson, J.B.

Hunter, D.

Lasley, B.

Lord, K.

Pradhan, Aswini K.

Rakhimov, Rakhim R.

Sellmyer, David J.

Williams, T.M.

Zhang, Jun

Zhang, K.

English

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University of Nebraska - Lincoln 
DigitalCommons@University of Nebraska - Lincoln 
David Sellmyer Publications Research Papers in Physics and Astronomy 
4-15-2006 
Self-assembled nanocrystalline epitaxial manganite films on 
SrTiO3/Si heterostructures 
D. Hunter 
Center for Materials Research, Norfolk State University, Norfolk, Virginia 
J.B. Dadson 
Center for Materials Research, Norfolk State University, Norfolk, Virginia 
K. Zhang 
Center for Materials Research, Norfolk State University, Norfolk, Virginia 
B. Lasley 
Center for Materials Research, Norfolk State University, Norfolk, Virginia 
K. Lord 
Center for Materials Research, Norfolk State University, Norfolk, Virginia 
See next page for additional authors 
Follow this and additional works at: https://digitalcommons.unl.edu/physicssellmyer 
 Part of the Physics Commons 
Hunter, D.; Dadson, J.B.; Zhang, K.; Lasley, B.; Lord, K.; Williams, T.M.; Rakhimov, Rakhim R.; Pradhan, 
Aswini K.; Zhang, Jun; and Sellmyer, David J., "Self-assembled nanocrystalline epitaxial manganite films 
on SrTiO3/Si heterostructures" (2006). David Sellmyer Publications. 8. 
https://digitalcommons.unl.edu/physicssellmyer/8 
This Article is brought to you for free and open access by the Research Papers in Physics and Astronomy at 
DigitalCommons@University of Nebraska - Lincoln. It has been accepted for inclusion in David Sellmyer Publications 
by an authorized administrator of DigitalCommons@University of Nebraska - Lincoln. 
Authors 
D. Hunter, J.B. Dadson, K. Zhang, B. Lasley, K. Lord, T.M. Williams, Rakhim R. Rakhimov, Aswini K. Pradhan, 
Jun Zhang, and David J. Sellmyer 
This article is available at DigitalCommons@University of Nebraska - Lincoln: https://digitalcommons.unl.edu/
physicssellmyer/8 
Self-assembled nanocrystalline epitaxial manganite films
on SrTiO3/Si heterostructures
D. Hunter, J. B. Dadson, K. Zhang, B. Lasley, K. Lord, T. M. Williams, R. R. Rakhimov,
and A. K. Pradhana
Center for Materials Research, Norfolk State University, 700 Park Avenue, Norfolk, Virginia 23504
J. Zhang and D. J. Sellmyer
Department of Physics and Astronomy and Center for Materials Research and Analysis,
University of Nebraska, Lincoln, Nebraska 68588-0113
Presented on 2 November 2005; published online 18 April 2006
We report the growth and magnetic characterizations of La0.7Ba0.3MnO3 and La0.7Sr0.3MnO3 films
on SrTiO3-buffered Si 100 and Si 111 substrates by pulsed-laser deposition. The structural
studies show the epitaxial nature of the films. The microscopic studies show that the films consist
of nanocrystalline particles. All films display sharp magnetic and electrical transitions associated
with the colossal magnetoresistance behavior at and above room temperature, illustrating the
superior quality of the films. © 2006 American Institute of Physics. DOI: 10.1063/1.2162088
Since the discovery of colossal magnetoresistance
CMR,1,2 mixed valence manganites have received consid-
erable research interest1–6 due to their unique resistive and
magnetic properties which facilitate potential applications in
magnetic, magnetoelectronic, photonic devices as well as
spintronic technology. The interplay among the spin, charge,
and orbital degree of freedom in these materials3–6 leads to
many intriguing phenomena, such as metal-insulator transi-
tion, magnetic phase transition, and nanoscale electronic
phase separation leading to percolative electron transport
phenomena in the context of both charge and orbital
ordering.1–9 The perovskite lanthanum-based manganites
R1−xBxMnO3, where R and B are rare-earth and alkaline
metals, respectively films have been grown on single-crystal
oxide substrates, such as SrTiO3 STO, LaAlO3 LAO, and
NdGaO3. Although advances have been made in the prepa-
ration of nano- and microcrystalline manganites10–16 on dif-
ferent substrates, films integrated onto Si and other potential
semiconductors and their physical investigations have not
been possible due to large substrate and film lattice mis-
match, mechanical and chemical disaccords arising from the
structural dissimilarities. Integration of manganites onto
semiconducting materials such as on Si, remains a challeng-
ing task for potential device applications that utilize both
information processing and data storage in the same device.
The recent progresses on direct integration of STO on Si
have opened the possibility to integrate both STO and
R1−xBxMnO3 onto this technologically important semicon-
ductor. Here we report the growth of high-quality epitaxial
La0.7Ba0.3MnO3 LBMO and La0.7Sr0.3MnO3 LSMO films
grown on STO/Si 100/111 heterostructures using pulsed-
laser deposition PLD. The films demonstrate ferromagnetic
properties in the vicinity of room temperature.
Epitaxial LBMO and LSMO nanocrystalline films were
grown on STO-buffered Si substrates both 100 and 111 by
multitarget PLD technique KrF excimer, =248 nm with a
pulse energy density of 1–2 J /cm2. Single-crystalline STO
and high-density LBMO and LSMO targets were used. The
manganite films were deposited with a substrate temperature
of 700–800 °C, keeping oxygen partial pressure within
200–400 mTorr. However, for the growth of STO template
layer on Si, the initial 2-nm-thick STO film was deposited
without using oxygen gas. Subsequently, an 18-nm-thick film
of STO was deposited with oxygen partial pressure of 1
mTorr with laser repetition rate of 3 Hz. Manganite films
having thickness of 50–100 nm were immediately deposited
on STO/Si using a laser repetition rate of 5 Hz. The films
were cooled to room temperature in 1–2 Torr of oxygen par-
tial pressure.
The films were characterized by x-ray diffraction XRD
and atomic force microscopy AFM. Magnetization M
was measured by a superconducting quantum interference
device SQUID magnetometer with in-plane magnetic field.
Electrical transport was studied by a four-probe a.c. tech-
nique.
The overall crystalline structure was studied by XRD. In
LBMO or LSMO /STO/Si heterostructures, LBMO grew
epitaxially only in 200 direction as shown in Fig. 1. This is
very consistent with the XRD pattern for LBMO or LSMO
grown directly on STO substrate as shown in the inset of Fig.
1 for LBMO/STO film. The XRD patterns illustrate the
highly crystalline and epitaxial nature of the films.
Figure 2 shows the AFM images of LBMO/STO/
Si100/111 and LSMO/STO/Si100/111 which reveal
that the surface is comprised of nanometer-sized particles.
The typical size of the particles is about 20 nm, and the size
distribution is very small, indicating the uniformity of all
particles. The root-mean-square rms surface roughness is
less than 2 nm in all films. Furthermore, the three-
dimensional 3D AFM images of the films reveal nanocone-
like structures which are uniformly distributed over the sur-
face. However, particle size for the LBMO/STO is about
twice larger than the films grown on STO-buffered Si. The
overall growth mode can be considered as Volmer-WeberaElectronic mail: apradhan@nsu.edu
JOURNAL OF APPLIED PHYSICS 99, 08Q307 2006
0021-8979/2006/998/08Q307/3/$23.00 © 2006 American Institute of Physics99, 08Q307-1
Downloaded 13 Nov 2006 to 129.93.16.206. Redistribution subject to AIP license or copyright, see http://jap.aip.org/jap/copyright.jsp
growth in which the energy relaxation takes place via the
formation of 3D islands to minimize the energy. If the strain
energy is large, particularly compressive in nature as in man-
ganites, the system will try to rearrange itself to find a lower-
energy state favoring the formation of 3D islands which may
consist of self-assembled nanocrystalline particles.
The corresponding zero-field resistivity results are also
shown in Figs. 3a and 3b for both LBMO/STO/Si and
LSMO/STO/Si multilayers, respectively. The temperature
dependence of resistivity reveals a remarkable sharp jump at
the metal-insulator transition temperature TMI and is con-
sistent with the magnetic transition.
The temperature dependence of the magnetization is
shown in Fig. 4 for both LBMO and LSMO nanocrystalline
films in a field of 0.1 T with the film surface parallel to the
applied magnetic field. The magnetic transitions inferred
from the zero-field-cooled ZFC magnetization for LBMO
films grown both on Si100 and Si111 are fairly sharp with
Tc=315 K as shown in Fig. 4. The ZFC magnetization for
LSMO on both Si100 and Si111 shows the ferromagnetic
transition of LSMO with Tc=330 K, which is fairly sharp.
The magnetization results clearly show that the magnetic
transitions in the above films are enhanced compared to
those previously reported17 on both LBMO/STO/MgO and
LSMO/STO/MgO films. One of the reasons for such en-
FIG. 1. X-ray diffraction XRD analysis of nanocrystalline LBMO
LSMO /STO/Si films grown by pulsed-laser deposition. The inset shows
the XRD pattern for LBMO/STO film.
FIG. 2. Atomic force microscopic AFM observations of nanocrystalline
films of manganites. a and b are the two-dimensional 2D and 3D AFM
images of LBMO/STO/Si100, respectively. c and d are 2D and 3D
AFM images of LBMO/STO/Si111, respectively. The 2D images display
very uniform nanocrystalline nature of the particle with particle size less
than 20 nm. The 3D images reveal the self-assembled inverted nanocone
structures uniformly distributed on the surface. e shows the nanocrystalline
manganite film directly on STO substrate consisting of nanoparticles of
about 40 nm in size.
FIG. 3. The electrical resistivity of a LBMO and b LSMO films on
Si100 and Si111 substrates.
FIG. 4. The temperature dependence of the zero-field-cooled ZFC magne-
tization of LBMO/STO and LSMO/STO film on Si100 and Si111 sub-
strates, indicating the transition temperature at 315 and 330 K, respectively.
08Q307-2 Hunter et al. J. Appl. Phys. 99, 08Q307 2006
Downloaded 13 Nov 2006 to 129.93.16.206. Redistribution subject to AIP license or copyright, see http://jap.aip.org/jap/copyright.jsp
hancement in Tc may be due to the strain relaxation in
LBMO or LSMO films due to their nanocrystalline behavior.
In conclusion, La0.7Ba0.3MnO3 and La0.7Sr0.3MnO3 films
were grown on SrTiO3-buffered Si 100 and Si 111 sub-
strates by pulsed-laser deposition. The films display epitaxial
growth with self-assembled nanocrystalline particles. All
films exhibit magnetic and electrical properties associated
with the colossal magnetoresistance behavior at and above
room temperature. These films may be useful for fabrication
of potential devices.
ACKNOWLEDGMENTS
This work is supported by the NASA and NSF Center
for Research Excellence in Science and Technology
CREST Grant No. HRD-9805059. One of the authors
RRR acknowledges support from the faculty research pro-
gram provided by NASA. Research at the University of Ne-
braska is supported by NSF-MRSEC, ONR, and CMRA.
1S. Jin, T. H. Tiefel, M. McCormack, R. A. Fastnacht, and R. Ramesh,
Science 264, 413 1994.
2R. von Helmholt, J. Wecker, B. Holszapfel, L. Schultz, and K. Samwer,
Phys. Rev. Lett. 71, 2331 1993.
3A. Moreo, S. Yunoki, and E. Dagotto, Science 283, 2034 1999.
4M. Uehara, S. Mori, C. H. Chen, and S.-W. Cheong, Nature London
399, 560 1999.
5A. J. Millis, Nature London 392, 147 1998.
6Y. Tokura and N. Nagosa, Science 288, 462 2000.
7M. B. Salamon and M. Jaime, Rev. Mod. Phys. 73, 583 2001.
8M. Fath, S. Freisem, A. A. Menovsky, Y. Tomoika, J. Aarts, and J. A.
Mydosh, Science 285, 1540 1999.
9J. C. London, N. D. Mathur, and P. A. Midgley, Nature London 420, 797
2002.
10P. Yang, T. Deng, D. Zhao, P. Feng, D. Pine, B. F. Chmelka, G. M.
Whitesides, and G. D. Stucky, Science 282, 2244 1998.
11D. Zhu, H. Zhu, and Y. Zhang, Appl. Phys. Lett. 80, 1634 2002.
12J. J. Urban, L. Ouyang, M.-H. Jo, D. S. Wang, and H. Park, Nano Lett. 4,
1547 2004.
13J. Jiang, L. L. Henry, K. I. Gnansekar, C. Chen, and E. I. Meletis, Nano
Lett. 4, 741 2004.
14V. Moshnyaga et al., Nat. Mater. 2, 247 2004.
15S. Han et al., Nano Lett. 4, 1241 2004.
16J.-H. Kim, S. I. Khartsev, and M. Grishin, Appl. Phys. Lett. 82, 4295
2003.
17A. K. Pradhan, D. Sahu, B. K. Roul, and Y. Feng, J. Appl. Phys. 96, 1170
2004.
08Q307-3 Hunter et al. J. Appl. Phys. 99, 08Q307 2006
Downloaded 13 Nov 2006 to 129.93.16.206. Redistribution subject to AIP license or copyright, see http://jap.aip.org/jap/copyright.jsp


Self-assembled nanocrystalline epitaxial manganite films on SrTiO\u3csub\u3e3\u3c/sub\u3e/Si heterostructures

DigitalCommons@University of Nebraska

University of Nebraska - Lincoln DigitalCommons@University of Nebraska - Lincoln David Sellmyer Publications Research Papers in Physics and Astronomy 4-15-2006 Self-assembled nanocrystalline epitaxial manganite films on SrTiO3/Si heterostructures D. Hunter Center for Materials Research, Norfolk State University, Norfolk, Virginia J.B. Dadson Center for Materials Research, Norfolk State University, Norfolk, Virginia K. Zhang Center for Materials Research, Norfolk State University, Norfolk, Virginia B. Lasley Center for Materials Research, Norfolk State University, Norfolk, Virginia K. Lord Center for Materials Research, Norfolk State University, Norfolk, Virginia See next page for additional authors Follow this and additional works at: https://digitalcommons.unl.edu/physicssellmyer  Part of the Physics Commons Hunter, D.; Dadson, J.B.; Zhang, K.; Lasley, B.; Lord, K.; Williams, T.M.; Rakhimov, Rakhim R.; Pradhan, Aswini K.; Zhang, Jun; and Sellmyer, David J., "Self-assembled nanocrystalline epitaxial manganite films on SrTiO3/Si heterostructures" (2006). David Sellmyer Publications. 8. https://digitalcommons.unl.edu/physicssellmyer/8 This Article is brought to you for free and open access by the Research Papers in Physics and Astronomy at DigitalCommons@University of Nebraska - Lincoln. It has been accepted for inclusion in David Sellmyer Publications by an authorized administrator of DigitalCommons@University of Nebraska - Lincoln. Authors D. Hunter, J.B. Dadson, K. Zhang, B. Lasley, K. Lord, T.M. Williams, Rakhim R. Rakhimov, Aswini K. Pradhan, Jun Zhang, and David J. Sellmyer This article is available at DigitalCommons@University of Nebraska - Lincoln: https://digitalcommons.unl.edu/physicssellmyer/8 Self-assembled nanocrystalline epitaxial manganite filmson SrTiO3/Si heterostructuresD. Hunter, J. B. Dadson, K. Zhang, B. Lasley, K. Lord, T. M. Williams, R. R. Rakhimov,and A. K. PradhanaCenter for Materials Research, Norfolk State University, 700 Park Avenue, Norfolk, Virginia 23504J. Zhang and D. J. SellmyerDepartment of Physics and Astronomy and Center for Materials Research and Analysis,University of Nebraska, Lincoln, Nebraska 68588-0113Presented on 2 November 2005; published online 18 April 2006We report the growth and magnetic characterizations of La0.7Ba0.3MnO3 and La0.7Sr0.3MnO3 filmson SrTiO3-buffered Si 100 and Si 111 substrates by pulsed-laser deposition. The structuralstudies show the epitaxial nature of the films. The microscopic studies show that the films consistof nanocrystalline particles. All films display sharp magnetic and electrical transitions associatedwith the colossal magnetoresistance behavior at and above room temperature, illustrating thesuperior quality of the films. © 2006 American Institute of Physics. DOI: 10.1063/1.2162088Since the discovery of colossal magnetoresistanceCMR,1,2 mixed valence manganites have received consid-erable research interest1–6 due to their unique resistive andmagnetic properties which facilitate potential applications inmagnetic, magnetoelectronic, photonic devices as well asspintronic technology. The interplay among the spin, charge,and orbital degree of freedom in these materials3–6 leads tomany intriguing phenomena, such as metal-insulator transi-tion, magnetic phase transition, and nanoscale electronicphase separation leading to percolative electron transportphenomena in the context of both charge and orbitalordering.1–9 The perovskite lanthanum-based manganitesR1−xBxMnO3, where R and B are rare-earth and alkalinemetals, respectively films have been grown on single-crystaloxide substrates, such as SrTiO3 STO, LaAlO3 LAO, andNdGaO3. Although advances have been made in the prepa-ration of nano- and microcrystalline manganites10–16 on dif-ferent substrates, films integrated onto Si and other potentialsemiconductors and their physical investigations have notbeen possible due to large substrate and film lattice mis-match, mechanical and chemical disaccords arising from thestructural dissimilarities. Integration of manganites ontosemiconducting materials such as on Si, remains a challeng-ing task for potential device applications that utilize bothinformation processing and data storage in the same device.The recent progresses on direct integration of STO on Sihave opened the possibility to integrate both STO andR1−xBxMnO3 onto this technologically important semicon-ductor. Here we report the growth of high-quality epitaxialLa0.7Ba0.3MnO3 LBMO and La0.7Sr0.3MnO3 LSMO filmsgrown on STO/Si 100/111 heterostructures using pulsed-laser deposition PLD. The films demonstrate ferromagneticproperties in the vicinity of room temperature.Epitaxial LBMO and LSMO nanocrystalline films weregrown on STO-buffered Si substrates both 100 and 111 bymultitarget PLD technique KrF excimer, =248 nm with apulse energy density of 1–2 J /cm2. Single-crystalline STOand high-density LBMO and LSMO targets were used. Themanganite films were deposited with a substrate temperatureof 700–800 °C, keeping oxygen partial pressure within200–400 mTorr. However, for the growth of STO templatelayer on Si, the initial 2-nm-thick STO film was depositedwithout using oxygen gas. Subsequently, an 18-nm-thick filmof STO was deposited with oxygen partial pressure of 1mTorr with laser repetition rate of 3 Hz. Manganite filmshaving thickness of 50–100 nm were immediately depositedon STO/Si using a laser repetition rate of 5 Hz. The filmswere cooled to room temperature in 1–2 Torr of oxygen par-tial pressure.The films were characterized by x-ray diffraction XRDand atomic force microscopy AFM. Magnetization Mwas measured by a superconducting quantum interferencedevice SQUID magnetometer with in-plane magnetic field.Electrical transport was studied by a four-probe a.c. tech-nique.The overall crystalline structure was studied by XRD. InLBMO or LSMO /STO/Si heterostructures, LBMO grewepitaxially only in 200 direction as shown in Fig. 1. This isvery consistent with the XRD pattern for LBMO or LSMOgrown directly on STO substrate as shown in the inset of Fig.1 for LBMO/STO film. The XRD patterns illustrate thehighly crystalline and epitaxial nature of the films.Figure 2 shows the AFM images of LBMO/STO/Si100/111 and LSMO/STO/Si100/111 which revealthat the surface is comprised of nanometer-sized particles.The typical size of the particles is about 20 nm, and the sizedistribution is very small, indicating the uniformity of allparticles. The root-mean-square rms surface roughness isless than 2 nm in all films. Furthermore, the three-dimensional 3D AFM images of the films reveal nanocone-like structures which are uniformly distributed over the sur-face. However, particle size for the LBMO/STO is abouttwice larger than the films grown on STO-buffered Si. Theoverall growth mode can be considered as Volmer-WeberaElectronic mail: apradhan@nsu.eduJOURNAL OF APPLIED PHYSICS 99, 08Q307 20060021-8979/2006/998/08Q307/3/$23.00 © 2006 American Institute of Physics99, 08Q307-1Downloaded 13 Nov 2006 to 129.93.16.206. Redistribution subject to AIP license or copyright, see http://jap.aip.org/jap/copyright.jspgrowth in which the energy relaxation takes place via theformation of 3D islands to minimize the energy. If the strainenergy is large, particularly compressive in nature as in man-ganites, the system will try to rearrange itself to find a lower-energy state favoring the formation of 3D islands which mayconsist of self-assembled nanocrystalline particles.The corresponding zero-field resistivity results are alsoshown in Figs. 3a and 3b for both LBMO/STO/Si andLSMO/STO/Si multilayers, respectively. The temperaturedependence of resistivity reveals a remarkable sharp jump atthe metal-insulator transition temperature TMI and is con-sistent with the magnetic transition.The temperature dependence of the magnetization isshown in Fig. 4 for both LBMO and LSMO nanocrystallinefilms in a field of 0.1 T with the film surface parallel to theapplied magnetic field. The magnetic transitions inferredfrom the zero-field-cooled ZFC magnetization for LBMOfilms grown both on Si100 and Si111 are fairly sharp withTc=315 K as shown in Fig. 4. The ZFC magnetization forLSMO on both Si100 and Si111 shows the ferromagnetictransition of LSMO with Tc=330 K, which is fairly sharp.The magnetization results clearly show that the magnetictransitions in the above films are enhanced compared tothose previously reported17 on both LBMO/STO/MgO andLSMO/STO/MgO films. One of the reasons for such en-FIG. 1. X-ray diffraction XRD analysis of nanocrystalline LBMOLSMO /STO/Si films grown by pulsed-laser deposition. The inset showsthe XRD pattern for LBMO/STO film.FIG. 2. Atomic force microscopic AFM observations of nanocrystallinefilms of manganites. a and b are the two-dimensional 2D and 3D AFMimages of LBMO/STO/Si100, respectively. c and d are 2D and 3DAFM images of LBMO/STO/Si111, respectively. The 2D images displayvery uniform nanocrystalline nature of the particle with particle size lessthan 20 nm. The 3D images reveal the self-assembled inverted nanoconestructures uniformly distributed on the surface. e shows the nanocrystallinemanganite film directly on STO substrate consisting of nanoparticles ofabout 40 nm in size.FIG. 3. The electrical resistivity of a LBMO and b LSMO films onSi100 and Si111 substrates.FIG. 4. The temperature dependence of the zero-field-cooled ZFC magne-tization of LBMO/STO and LSMO/STO film on Si100 and Si111 sub-strates, indicating the transition temperature at 315 and 330 K, respectively.08Q307-2 Hunter et al. J. Appl. Phys. 99, 08Q307 2006Downloaded 13 Nov 2006 to 129.93.16.206. Redistribution subject to AIP license or copyright, see http://jap.aip.org/jap/copyright.jsphancement in Tc may be due to the strain relaxation inLBMO or LSMO films due to their nanocrystalline behavior.In conclusion, La0.7Ba0.3MnO3 and La0.7Sr0.3MnO3 filmswere grown on SrTiO3-buffered Si 100 and Si 111 sub-strates by pulsed-laser deposition. The films display epitaxialgrowth with self-assembled nanocrystalline particles. Allfilms exhibit magnetic and electrical properties associatedwith the colossal magnetoresistance behavior at and aboveroom temperature. These films may be useful for fabricationof potential devices.ACKNOWLEDGMENTSThis work is supported by the NASA and NSF Centerfor Research Excellence in Science and TechnologyCREST Grant No. HRD-9805059. One of the authorsRRR acknowledges support from the faculty research pro-gram provided by NASA. Research at the University of Ne-braska is supported by NSF-MRSEC, ONR, and CMRA.1S. Jin, T. H. Tiefel, M. McCormack, R. A. Fastnacht, and R. Ramesh,Science 264, 413 1994.2R. von Helmholt, J. Wecker, B. Holszapfel, L. Schultz, and K. Samwer,Phys. Rev. Lett. 71, 2331 1993.3A. Moreo, S. Yunoki, and E. Dagotto, Science 283, 2034 1999.4M. Uehara, S. Mori, C. H. Chen, and S.-W. Cheong, Nature London399, 560 1999.5A. J. Millis, Nature London 392, 147 1998.6Y. Tokura and N. Nagosa, Science 288, 462 2000.7M. B. Salamon and M. Jaime, Rev. Mod. Phys. 73, 583 2001.8M. Fath, S. Freisem, A. A. Menovsky, Y. Tomoika, J. Aarts, and J. A.Mydosh, Science 285, 1540 1999.9J. C. London, N. D. Mathur, and P. A. Midgley, Nature London 420, 7972002.10P. Yang, T. Deng, D. Zhao, P. Feng, D. Pine, B. F. Chmelka, G. M.Whitesides, and G. D. Stucky, Science 282, 2244 1998.11D. Zhu, H. Zhu, and Y. Zhang, Appl. Phys. Lett. 80, 1634 2002.12J. J. Urban, L. Ouyang, M.-H. Jo, D. S. Wang, and H. Park, Nano Lett. 4,1547 2004.13J. Jiang, L. L. Henry, K. I. Gnansekar, C. Chen, and E. I. Meletis, NanoLett. 4, 741 2004.14V. Moshnyaga et al., Nat. Mater. 2, 247 2004.15S. Han et al., Nano Lett. 4, 1241 2004.16J.-H. Kim, S. I. Khartsev, and M. Grishin, Appl. Phys. Lett. 82, 42952003.17A. K. Pradhan, D. Sahu, B. K. Roul, and Y. Feng, J. Appl. Phys. 96, 11702004.08Q307-3 Hunter et al. J. Appl. Phys. 99, 08Q307 2006Downloaded 13 Nov 2006 to 129.93.16.206. Redistribution subject to AIP license or copyright, see http://jap.aip.org/jap/copyright.jsp

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Self-assembled nanocrystalline epitaxial manganite films on SrTiO\u3csub\u3e3\u3c/sub\u3e/Si heterostructures

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