We report on a very strong, and a rather sharp, photoresistance peak originating from a dimensional magnetoplasmon resonance (MPR) in a high-mobility GaAs/AlGaAs quantum well driven by microwave radiation into a zero-resistance state (ZRS). The analysis of the MPR signal reveals a negative background, providing experimental evidence for the concept of absolute negative resistance associated with the ZRS. When the system is further subject to a dc field, the maxima of microwave-induced resistance oscillations decay away and the system reveals a state with close-to-zero differential resistance. The MPR peak, on the other hand, remains essentially unchanged, indicating robust Ohmic behavior under the MPR conditions
