Noncollinear frustrated magnets are proposed as a new class of spintronic
materials with high magnetoresistance which can be controlled with relatively
small applied voltages. It is demonstrated that their magnetic configuration
strongly depends on position of the Fermi energy and applied voltage. The
voltage induced control of noncollinear frustrated materials (VCFM) can be seen
as a way to intrinsic control of colossal magnetoresistance (CMR) and is the
bulk material counterpart of spin transfer torque concept used to control giant
magnetoresistance in layered spin-valve structures.Comment: 4 pages, 4 figure

Canals, B.

Chshiev, M.

Kalitsov, A.

Lacroix, C.

English

arXiv

International audienceIn our work, we theoretically demonstrated the possibility to control magnetic configurations and magnetoresistance of a wide class of magnetically frustrated materials with applied voltages. This phenomenon may be viewed as the bulk material counterpart of spin-transfer torque and may represent a critical interest both from applications and fundamental points of view. It is shown that the magnetic configuration of bulk magnets strongly depends on position of the Fermi level and applied voltage. We propose this phenomenon for future experimental studies suggesting materials with a strong variation in density of states near the Fermi level for different magnetic configurations

Canals, Benjamin

Lacroix, Claudine

Hal-Diderot

Current-induced switching and magnetoresistance of noncollinear bulk magnetic structures

HAL-CEA

A. Kalitsov

M. Chshiev

B. Canals

C. Lacroix

Crossref

Physical Review B

Hal - Université Grenoble Alpes

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