KORMA, EJ

SNIJDER, J

VERWEY, JF

VISSER, K

MOSFET's with variable channel lengths have been fabricated in both mono- and fine-grained polycrystalline silicon. We present a new method based upon a simple CV technique, to measure the effective channel length and gate oxide thickness. The channel-length reduction of the poly-Si MOSFET's was about 7.8 µm from which an effective lateral diffusion coefficient at 1000°C of phosphorus of 5 × 10 -13 cm 2 /s was calculated. The electron mobility was in the range of 10-20 cm 2 /V.s and the threshold voltage was about 17 V. The MOSFET's in mono-Si have been used as a reference. The results of measurements on these devices are in agreement with literature

Korma, EJ

Visser, K

Snijder, J

Verwey, JF

Proceedings - University of Groningen

Fast determination of the effective channel length and the gate Oxide thickness in polycrystalline Silicon MOSFET's

FAST DETERMINATION OF THE EFFECTIVE CHANNEL LENGTH AND THE GATE OXIDE THICKNESS IN POLYCRYSTALLINE SILICON MOSFETS

FAST DETERMINATION OF THE EFFECTIVE CHANNEL LENGTH AND THE GATE OXIDE THICKNESS IN POLYCRYSTALLINE SILICON MOSFETS

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Proceedings - University of Groningen