Zinc oxide (ZnO) and Al-doped zinc oxide (AZO) films were in turn deposited on cycloolefin polymer (COP) substrates by means of pulsed laser deposition (PLD) using an ArF excimer laser (λ=193 nm). In the laminated AZO/ZnO structure with ultra-thin layer of AZO (20 nm-thick), resistivity of 1.03×10^ Ω・cm, Hall mobility of 20.1 cm^2/V・s, and carrier density of 2.46×10^ cm^ were obtained. Ga-doped zinc oxide (GZO) thin films were deposited on COP substrates at room temperature by means of PLD using FHG of Nd: YAG laser (λ=266 nm, laser energy density 2～16 mJ/cm^2) at room temperature. As a result, the resistivity was improved from 6.61×10^ Ω・cm to 5.94×10^4 Ω・cm for films annealed at a laser energy density of 12 mJ/cm^2
