Journal of Telecommunication, Electronic and Computer Engineering (JTEC)
Abstract
Characterization of nanoscale planar and vertical metal-oxide-semiconductor field effect transistor incorporating dielectric pocket (DP-MOSFET) is demonstrated by using numerical simulation. Vertical MOSFET is one solution to shrink the channel length (L g ) into nanometer regime. The comparison between planar and vertical MOSFET was done to show an advantages of dielectric pocket and each performances in current-voltage analysis. Dielectric pocket is incorporated between the channel and source/drain for suppression of short-channel effects (SCE) and bulk punchthrough. The current-voltage analysis for both structure shows rational value of threshold voltage (V T ), drive current (I ON ), off-state leakage current (I OFF ), subthreshold swing (S) and Drain Induced Barrier Lowering (DIBL). A better control of VT roll-off was also demonstrated by incorporation of DP and better for vertical MOSFET compared to planar MOSFET. Thus, the incorporation of DP will enhance the electrical performance and give a very good control of the SCE for scaling the MOSFET in nanometer regime for future development of nanoelectronics produc
