'Publishing House for Science and Technology, Vietnam Academy of Science and Technology'
Abstract
We present a theoretical study of roughness-related scatteringmechanisms for electrons in single heterostructures, especilaly in Gaussian-doped ZnO surface quantum wells. We show that besides the conventional scatterings there must existroughness-related mechanisms of charge origin, which stem from fluctuations the electron density and the donor density in the bulk ZnO. The strength of the two charge-origin scattering sources is found to be comparable with the one of the standard one from fluctuations in the barrier position. The effect of the dielectric discontinuity on the scattering mechanisms is discussed
