A method for measuring extrapolated unity current gain of transistor chips
- Publication date
- Publisher
- Lehigh Preserve
Abstract
A production method for measuring fT of beam lead transistor chips has been developed. The measurement is made on the transistor chips eliminating the need of mounting samples on headers and makingthe measurement in the conventional way. Only measurements at a frequency of 100 megahertz are considered, but the same techniques should apply at frequencies up to 300 megahertz