CORE
🇺🇦
make metadata, not war
Services
Services overview
Explore all CORE services
Access to raw data
API
Dataset
FastSync
Content discovery
Recommender
Discovery
OAI identifiers
OAI Resolver
Managing content
Dashboard
Bespoke contracts
Consultancy services
Support us
Support us
Membership
Sponsorship
Community governance
Advisory Board
Board of supporters
Research network
About
About us
Our mission
Team
Blog
FAQs
Contact us
Quantification of thin gate oxide impact on the switching characteristics of MOSFETs
Authors
Franklin Daniel. Nkansah
Publication date
Publisher
Lehigh Preserve
Abstract
Abstract is not available.
Similar works
Full text
Open in the Core reader
Download PDF
Available Versions
Lehigh University: Lehigh Preserve
See this paper in CORE
Go to the repository landing page
Download from data provider
oai:preserve.lehigh.edu:etd-11...
Last time updated on 17/10/2019
