Polycrystalline diamond (PCD) films have been grown over 100 mm diameter silicon (100) substrate, using microwave plasma chemical vapour deposition (MPCVD) technique. The deposition was carried out inside a 15 cm diameter quartz chamber with microwave power of 15 kW at 915 MHz frequency. Uniform substrate surface temperature of 1050 degrees C with plasma heating was maintained with simultaneous cooling arrangement. The pressure was 110 Torr and the microwave incident power was 8.5 kW. Temperature uniformity and plasma geometry over the substrate are the key parameters for producing uniformly thick MPCVD diamond films of high quality. Thickness uniformity of as-deposited films is +/- 10% across 100 mm diameters with a growth rate of 1 mu m.h(-1). The grown PCD was characterized by X-ray diffractometry (XRD), Raman spectrometry, field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), transmission electron microscopy (TEM) and bright field imaging technique. Experimental results indicate columnar growth of a very densely crystalline PCD with (111) facets of high quality morphology
