GaN growth on sapphire by MOCVD - Material for HEMT structures

Abstract

Contains fulltext : 27418.pdf (publisher's version ) (Open Access)This thesis focuses on growth and basic characterization of AlGaN/GaN based high electron mobility structures. In order to provide theoretical background for the presented research, the basic physical properties of III-V nitrides and the characteristics of the HEMT structures are discussed. Additionally, properties of substrates used for GaN epitaxy are describedRU, 05 april 2006Promotor : Larsen, P.K. Co-promotor : Hageman, P.R.VI, 115 p