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Low-Frequency Noise Behavior of nMOSFETs with Different Al2O3 Capping Layer Thickness and TiN Gate
Authors
B.T. Chan
Cor Claeys
+8Â more
Nard Dumoulin-Stuyck
Bogdan Govoreanu
Julien Jussot
Stefan Kubicek
Dan Mocuta
Iuliana Radu
Eddy Simoen
Danghui Wang
Publication date
21 August 2019
Publisher
ICLAB
Doi
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Abstract
Abstract is not available.
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Infoscience - École polytechnique fédérale de Lausanne
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oai:infoscience.epfl.ch:269189
Last time updated on 04/09/2019