Update on scribe–cleave–passivate (SCP) slim edge technology for silicon sensors: Automated processing and radiation resistance
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Abstract
We pursue scribe–cleave–passivate (SCP) technology for making “slim edge” sensors. The goal is to
reduce the inactive region at the periphery of the devices while maintaining their performance. In this
paper we report on two aspects of the current efforts. The first one involves fabrication options for mass
production. We describe the automated cleaving tests and a simplified version of SCP post-processing of
n-type devices. Another aspect is the radiation resistance of the passivation. We report on the radiation
tests of n- and p-type devices with protons and neutrons