Sensitivity of CMOS Image sensor and Scaling

Abstract

This thesis focuses on the sensitivity characteristics of CMOS image sensors and scaling trends. We address the sensitivity characteristics of CMOS image sensor in advanced processes. Sensitivity characteristics, espacially spectral sensitivity and quantum efficiency, is measured. We scaled the sensitivity trends in advanced processes, also. In this paper, we show the sensitivity of CMOS image sensor using standard CMOS 0.35μm, 0.6μm, 90nm process technologies. Particularly, the spectral sensitivity and the quantum efficiency are measured. The spectral sensitivity exhibits the relation between the radiant sensitivity and the wave length of the incident light. The quantum efficiency chracterizes the transformation of the incident light on the photodiode sensor into electrical charges. These sensitivity characteristics represent the performance of an image sensor using a standard CMOS process technology. We scaled the trends of sensitivity with advanced processes, also. The sensitivity characteristic of below a 90nm CMOS process technology is scaled by the relationship between the process technology generation and the junction depth. In advanced process, CMOS process technology is hardly use only for image sensor. However, recognization of sensitivity characteristics of image sensor in advanced processes is helpful for technical chip, not for just image sensor. We can also show the roadmap for optimum pixel configuration of image sensor with downscaled processes by modeling the trends of sensitivity.報告番号: ; 学位授与年月日: 2006-09-28 ; 学位の種別: 修士 ; 学位の種類: 修士(工学) ; 学位記番号: ; 研究科・専攻: 工学系研究科電子工学専