This study has shown that hyperspectral photoluminescence (HSPL) imaging may be used for connecting defect-related luminescence (DRL) signals to electrically active oxygen clusters of thermal donors (TDs). Thus, by using the fast and non-destructive method of HSPL imaging at an early stage of production may increase the yield of the Czochralski silicon (CZ-Si) material. The scanned vertical cross-section samples were extracted from two CZ-Si crystals pulled at different velocities. The crystal with the highest pull speed has been concluded to be cleanest with best outlooks for commercial use. The HSPL images show dominant DRL signals for the low pull speed crystal. The highest [Oi] is found close to the seed end of the crystal, and it corresponds well with the strongest DRL signal detected at 0.767 eV, commonly known as the P-line. A spatial vacancy-interstitial dominating transition area has been observed for samples near the seed end. The transition area is concluded to be a denuded area, free of impurities. After the 450˚C heat treatment, the main emission lines for TD-dominated samples were 0.704 eV, 0.725 eV, 0.749 eV, the P-line, 0.789 eV (C-line) and 0.925 eV (H-line). The strongest DRL signals for TD-dominated samples are uniformly distributed as a function of crystal height. A statistical technique called Multivariate Curve Resolution is used within the Python environment to support the findings of the DRL signals. After the heat treatment at 650˚C, the band-to-band signal at 1.12 eV is greatly enhanced, at most for the high pull speed crystal with the lowest [Oi]. The seven DRL emission lines from 0.68 eV to 0.79 eV are replaced with one continuous broad P-line signal. The P-line is connected to TDs, but one hour of thermal annealing may have been too short for TD elimination. In order to confirm this hypothesis, further investigations would be natural to do with different time intervals of the 650˚C heat treatment
