Jia, Hao

Wu, Qingjun

Xiao, Sanshui

Zhang, Dongxian

Soft-X-ray lithography has emerged as a newly technique for manufacturing nanopatterns with both high precision and throughput. Here, we utilize four-beam interference lithography and achromatic Talbot lithography to fabricate high-resolution, and large-area color filters. Conventional top-down lithography techniques with high resolution, such as EBL and FIB, are low-throughput, which restrict large-area fabrication for industrial applications. Recently, soft-X-ray lithography with high resolution, strong exposure intensity and excellent coherence has generated considerable intertest as a promising technique for manufacturing nanopatterns with both high precision and throughput. Here we utilize four-beam interference lithography [1] and achromatic Talbot lithography (ATL) [2], by utilizing soft-X-ray interference lithography to achieve stitching nano-patterns and fast fabrication of large-area color filters. The samples are mainly prepared at the Soft-X-Ray Interference Lithography Beamline (BL08U1B) in Shanghai Synchrotron Radiation Facility (SSRF). Four gold gratings were used as the mask of four-beam interference lithography. Nanodot arrays were realized via the first order interference of four-beam Soft-X-Ray. In order to obstruct the zeroth order, an order sorting aperture (OSA) was placed closely but disconnectedly in front of wafer. The large-area manufacturing of nano-cylinder arrays was achieved by stitching multiple exposure fields. Fig. 1 (a) shows the scheme of four-beam interference lithography. Fig. 1 (c) shows the color filter sample with the period of 230 nm fabricated by four-beam interference lithography whose area is 4 x 4 mm2 and its optical micrograph and SEM image. Achromatic Talbot lithography method makes use of Talbot effect, which is a well-known phenomenon in which illuminated objects with periodic transmission profile produce self-images at certain distances. Compared with four-beam interference lithography, a single grating mask is employed in ATL, which simplifies the mask fabrication process, and enables to use full of illuminating area. Fig. 1 (b) shows the schematic illustration of achromatic Talbot lithography. The color filter consists of the silicon substrate, HSQ cylinder and Ag film. Fig. 1 (d) shows the optical micrograph and SEM image of the color filter with the period of 200 nm fabricated by ATL whose area is 0.72 x 0.72 mm2<br/

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Downloaded from orbit.dtu.dk on: Sep 11, 2019Plasmonic color filters fabricated by soft-X-ray lithographyWu, Qingjun; Jia, Hao; Xiao, Sanshui ; Zhang, DongxianPublication date:2019Document VersionPublisher's PDF, also known as Version of recordLink back to DTU OrbitCitation (APA):Wu, Q., Jia, H., Xiao, S., & Zhang, D. (2019). Plasmonic color filters fabricated by soft-X-ray lithography. Postersession presented at 9th International Conference on Surface Plasmon Photonics, Copenhagen, Denmark.   Plasmonic color filters fabricated by soft-X-ray lithography  ngjun Wu1, 2, Hao Jia1, Sanshui Xiao2, Dongxian Zhang1 1. State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou, 310027, People’s Republic of China 2. Department of Photonics Engineering, Technical University of Denmark, Kgs. Lyngby, 2800, Denmark  Abstract: Soft-X-ray lithography has emerged as a newly technique for manufacturing nanopatterns with both high precision and throughput. Here, we utilize four-beam interference lithography and achromatic Talbot lithography to fabricate high-resolution, and large-area color filters. Conventional top-down lithography techniques with high resolution, such as EBL and FIB, are low-throughput, which restrict large-area fabrication for industrial applications. Recently, soft-X-ray lithography with high resolution, strong exposure intensity and excellent coherence has generated considerable intertest as a promising technique for manufacturing nanopatterns with both high precision and throughput. Here we utilize four-beam interference lithography [1] and achromatic Talbot lithography (ATL) [2], by utilizing soft-X-ray interference lithography to achieve stitching nano-patterns and fast fabrication of large-area color filters. The samples are mainly prepared at the Soft-X-Ray Interference Lithography Beamline (BL08U1B) in Shanghai Synchrotron Radiation Facility (SSRF). Four gold gratings were used as the mask of four-beam interference lithography. Nanodot arrays were realized via the first order interference of four-beam Soft-X-Ray. In order to obstruct the zeroth order, an order sorting aperture (OSA) was placed closely but disconnectedly in front of wafer. The large-area manufacturing of nano-cylinder arrays was achieved by stitching multiple exposure fields. Fig. 1 (a) shows the scheme of four-beam interference lithography. Fig. 1 (c) shows the color filter sample with the period of 230 nm fabricated by four-beam interference lithography whose area is 4 x 4 mm2 and its optical micrograph and SEM image. Achromatic Talbot lithography method makes use of Talbot effect, which is a well-known phenomenon in which illuminated objects with periodic transmission profile produce self-images at certain distances. Compared with four-beam interference lithography, a single grating mask is employed in ATL, which simplifies the mask fabrication process, and enables to use full of illuminating area. Fig. 1 (b) shows the schematic illustration of achromatic Talbot lithography. The color filter consists of the silicon substrate, HSQ cylinder and Ag film. Fig. 1 (d) shows the optical micrograph and SEM image of the color filter with the period of 200 nm fabricated by ATL whose area is 0.72 x 0.72 mm2.  Fig. 1 (a)The scheme of four-beam interference lithography. (b)The scheme of achromatic Talbot lithography. (c) the optical micrograph and SEM image of the color filter with the period of 230 nm fabricated by four-beam interference lithography. (d) the optical micrograph and SEM image of the color filter with the period of 200 nm fabricated by ATL. Acknowledgement Financial support from National Key Research and Development Program of China (No. 2017YFA0403403), China Scholarship Council (Nos. 201706320249) and the Open Foundation of the State Key Laboratory of Modern Optical Instrumentation (No. MOIKF201701).   References [1] Sun, L., Hu, X., Wu, Q., Wang, L., Zhao, J., & Yang, S., et al., “High throughput fabrication of large-area plasmonic color filters by soft-x-ray interference lithography”. Optics Express, 24(17), 19112 (2016).      [2] Wu, Q., Xia, H., Jia, H., Wang, H., & Jiang, C., et al., “Fast and large-area fabrication of plasmonic reflection color filters by achromatic Talbot lithography”. Optics Letters, in press (2019). 

Plasmonic color filters fabricated by soft-X-ray lithography

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Plasmonic color filters fabricated by soft-X-ray lithography

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