We measured the anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) in a [001] oriented epitaxial thin film of La0.7Ca0.3MnO3 (LCMO) as a function of magnetic field, temperature, and current direction relative to the crystal axes. We find that both AMR and PHE in LCMO depend strongly on the current orientation relative to the crystal axes, and we demonstrate the applicability of AMR and PHE equations based on a fourth order magnetoresistance tensor consistent with the film symmetry

Ahn, C. H.

Bason, Y.

Hoffman, J.

Hong, X.

Klein, L.

Naftalis, N.

English

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University of Nebraska - Lincoln
DigitalCommons@University of Nebraska - Lincoln
Xia Hong Publications Research Papers in Physics and Astronomy
2009
Anisotropic magnetoresistance and planar Hall
effect in epitaxial films of La0.7Ca0.3MnO3
N. Naftalis
Y. Bason
J. Hoffman
X. Hong
C. H. Ahn
See next page for additional authors
Follow this and additional works at: https://digitalcommons.unl.edu/physicshong
Part of the Atomic, Molecular and Optical Physics Commons, and the Engineering Physics
Commons
This Article is brought to you for free and open access by the Research Papers in Physics and Astronomy at DigitalCommons@University of Nebraska -
Lincoln. It has been accepted for inclusion in Xia Hong Publications by an authorized administrator of DigitalCommons@University of Nebraska -
Lincoln.
Authors
N. Naftalis, Y. Bason, J. Hoffman, X. Hong, C. H. Ahn, and L. Klein
Anisotropic magnetoresistance and planar Hall effect in epitaxial films
of La0.7Ca0.3MnO3
N. Naftalis,1,a Y. Bason,1 J. Hoffman,2 X. Hong,2 C. H. Ahn,2 and L. Klein1
1Department of Physics, Nano-magnetism Research Center, Institute of Nanotechnology
and Advanced Materials, Bar-Ilan University, Ramat-Gan 52900, Israel
2Department of Applied Physics, Yale University, New Haven, 06520-8284 Connecticut, USA
Received 23 April 2009; accepted 18 June 2009; published online 22 July 2009
We measured the anisotropic magnetoresistance AMR and the planar Hall effect PHE in a 001
oriented epitaxial thin film of La0.7Ca0.3MnO3 LCMO as a function of magnetic field, temperature,
and current direction relative to the crystal axes. We find that both AMR and PHE in LCMO depend
strongly on the current orientation relative to the crystal axes, and we demonstrate the applicability
of AMR and PHE equations based on a fourth order magnetoresistance tensor consistent with the
film symmetry. © 2009 American Institute of Physics. DOI: 10.1063/1.3176934
I. INTRODUCTION
Doped manganites have been extensively studied since
the observation of colossal magnetoresistance.1 Special at-
tention has been given to the magnetotransport properties of
these materials, including their anisotropic magnetoresis-
tance AMR and planar Hall effect PHE.2,3 Recent studies
of c-oriented La0.8Sr0.2MnO3 LSMO thin films show that
for a correct description of the AMR and the PHE in this
compound, one needs to take into consideration the crystal-
line contribution and expand the magnetoresistance tensor to
fourth order using both the angle  between the magnetiza-
tion M and the 100 and the angle  between the current
J and the 100 see inset of Fig. 1a.4 Based on this
expansion, the AMR, which describes the changes in the
longitudinal resistivity long, and the PHE, which describes
the changes in the transverse resistivity trans, are given as
long = A cos2 − 2 + B cos2 + 2 + C cos4 + D
1
and
trans = A sin2 − 2 − B sin2 + 2 . 2
Here we study the AMR and the PHE in the manganite
La0.7Ca0.3MnO3 LCMO. Previous studies of long and trans
in this compound used the equations valid for amorphous
and polycrystalline films, for which
long =  +  − cos2  , 3
trans =  − sin  cos  , 4
where  and  are the resistivities parallel and perpendicu-
lar to the magnetization, respectively, and  is the angle
between J and M; i.e., =−. While deviations from Eqs.
3 and 4 were observed for LCMO,3 they were attributed
to various extrinsic sources, and the applicability of the
equations to LCMO was not questioned. Here we show that
Eqs. 3 and 4 are not applicable, while Eqs. 1 and 2
provide a good description of long and trans in LCMO. We
note that when J is along 100 or 010, Eq. 1 reduces to
long=C0+C1 cos2 +C2 cos4 , a form used before to ac-
count for crystal contribution in various magnetic films in-
cluding epitaxial films of Fe Ref. 5 and Fe3O4.6
II. SAMPLE CHARACTERIZATION
The thin films used for this study are 001 oriented ep-
itaxial thin films of LCMO grown on single crystal SrTiO3
100 using off-axis magnetron sputtering. The growth tem-
perature is 660 °C with process gases of 80% argon and
20% oxygen at a pressure of 150 mTorr.7 The deposition rate
is 1 nm /min and the sample is cooled in 1 atm O2. No
additional postannealing is performed. X-ray diffraction
measurements suggest that the film is partially relaxed, since
its c-axis lattice constant 3.85 Å is less than the bulk value
3.86 Å. X-ray reflectivity and -2 scans show that the film
whose measurements are presented here is 32 nm in thick-
aElectronic mail: naftaln@mail.biu.ac.il.
0
40
80
120
0
1
2
3
0 50 100 150 200 250 300
(ρ
(0
)-
ρ(
5T
))
/ρ
(5
T
)
[%
]
µ
B
per
f.u.
T [K]
(b)
0
20
40
60
80
100
H=0 T
H=5 T
ρ
[m
Ω
cm
]
(a)
FIG. 1. Color online a Temperature dependence of the resistivity  in
zero field open symbols and in a field of 5 T close symbols. Inset: A
sketch of the angles  and  used in Eqs. 1 and 2. b Magnetization in
units of B / f.u. as a function of temperature while cooling in a field of 2000
Oe along 110, and magnetoresistance as a function of temperature in an
in-plane field of 5 T.
JOURNAL OF APPLIED PHYSICS 106, 023916 2009
0021-8979/2009/1062/023916/3/$25.00 © 2009 American Institute of Physics106, 023916-1
ness. The film was patterned by photolithography to allow
long and trans measurements, with J at different angles 
relative to 100. Figure 1a presents the resistivity data of
this film in zero field and in 5 T. The zero field resistivity
peak temperature is 275 K, close to the bulk value of this
composition, and the effect of the applied field is typical.
Figure 1b presents magnetization as a function of tempera-
ture while cooling in a field of 2000 Oe applied along 110,
and magnetoresistance in an in-plane field of 5 T. The films
exhibit biaxial magnetocrystalline anisotropy with easy axes
along 110 directions. This is demonstrated in Fig. 2, which
shows that these are the directions of the remanent magneti-
zation obtained after applying and removing a magnetic field
in different directions. The biaxial anisotropy we find is con-
sistent with Ref. 8 while in Ref. 9 the easy axes are along
100. The origin of this discrepancy is unclear.
III. RESULTS AND DISCUSSION
Figure 3 shows long and trans measurements at T
=125 K. For convenience we subtract from long its average
value, which is denoted as D in Eq. 1, and define it as
long. The measurements were preformed on patterns with
different J directions relative to 100  as a function of the
magnetization direction relative to 100 . The measure-
ments were taken with a constant magnetic field of 4 T ro-
tating in the plane of the film. The magnitude of the magnetic
field we use is much larger than the anisotropy field; hence,
the magnetization orientation is in the direction of the ap-
plied field. The deviation of the observed behavior from Eqs.
3 and 4, and the contribution of crystal symmetry are
quite evident. Despite the fact that both long and trans ap-
pear sinusoidal, the amplitudes of long and trans for a given
 are different and they both depend on , inconsistent with
Eqs. 3 and 4 according to which all amplitudes should be
the same. Moreover, Fig. 4 shows that at T=25 K the crystal
symmetry contribution becomes prominent and long exhib-
its contributions with fourfold symmetry. Figure 4 also
shows that exactly the same behavior is observed for differ-
ent fields between 2 and 5 T indicating that the magnetiza-
tion follows the applied field. This indicates that the fourfold
symmetry is an intrinsic property of the resistivity tensor as
allowed by symmetry and not a result of the effect of mag-
netocrystalline anisotropy on magnetic orientation. We note
that fourfold symmetry in the AMR data was observed in
other systems such as Ga,MnAs.10
In view of the failure of Eqs. 3 and 4, we try to fit the
data at T=125 K, for which we have AMR and PHE for five
different ’s, with Eqs. 1 and 2. We find that the same
four fitting parameters A=−8.79, B=−6.41, C=0.53, and D
=6241 which is a constant shift provide a good fit to all ten
different AMR and PHE curves. This indicates that Eqs. 1
and 2, which were used successfully to fit the AMR and the
PHE data of LSMO,4 provide a good description of the AMR
and the PHE data for LCMO, as well.
The reported  dependence of the amplitude is important
for applications. Designing sensing devices11 or memory
devices12 with manganites can benefit from increasing the
signal by having the current in particular directions for which
the AMR or the PHE signals attain their maximum values.
As we can see, trans obtains its largest amplitude for 
= /4 while the PHE and the AMR are often measured
with =0, /2. The fact that the AMR and the PHE in
LSMO and LCMO are described by Eqs. 1 and 2 and not
by Eqs. 3 and 4, as previously assumed, suggests the need
for a more extensive study of the magnetotransport proper-
ties of other manganites and other magnetic epitaxial films.
-4
0
4
0 45 90 135 180
Field On
Field Off
ρ t
ra
ns
[µ
Ω
cm
]
β [Deg.]
T=150 K
FIG. 2. Color online trans at T=150 K as a function of 	, the angle
between an in-plane applied field of 600 Oe and 100. For each 	 trans is
measured with field on and then with field off. The current direction is along
100.
-15
0
15
0 45 90 135 180
θ=0
θ=15
θ=45
θ=60
θ=90
∆
ρ l
on
g
[µ
Ω
cm
]
α [Deg.]
-15
0
15
ρ t
ra
ns
[µ
Ω
cm
]
FIG. 3. Color online long and trans of five patterns with different ’s as
a function of  at T=125 K. The solid lines are fits to Eqs. 1 and 2.
-4
-2
0
2
4
0 45 90 135 180
H=2 T
H=3 T
H=4 T
H=5 T
∆
ρ l
on
g
[µ
Ω
cm
]
α [Deg.]
FIG. 4. Color online long as a function of  for a pattern with = /4
with four different applied fields, at T=25 K.
023916-2 Naftalis et al. J. Appl. Phys. 106, 023916 2009
ACKNOWLEDGMENTS
L.K. acknowledges support by the Israel Science Foun-
dation founded by the Israel Academy of Sciences and Hu-
manities Grant No. 577/07. The work at Yale is supported
by NSF MRSEC Grant Nos. DMR 0520495 and DMR
0705799, NRI, ONR, and the Packard Foundation.
1M. McCormack, S. Jin, T. H. Tiefel, R. M. Fleming, J. M. Phillips, and R.
Ramesh, Appl. Phys. Lett. 64, 3045 1994.
2E. Favre-Nicolin and L. Ranno, J. Magn. Magn. Mater. 272–276, 1814
2004; J.-B. Yau, X. Hong, A. Posadas, C. H. Ahn, W. Gao, E. Altman, Y.
Bason, L. Klein, M. Sidorov, and Z. Krivokapic, J. Appl. Phys. 102,
103901 2007.
3I. C. Infante, V. Laukhin, F. Sánchez, and J. Fontcuberta, Mater. Sci. Eng.,
B 126, 283 2006; X. Jin, R. Ramos, Y. Zhou, C. McEvoy, and I. V.
Shvets, J. Appl. Phys. 99, 08C509 2006.
4Y. Bason, J. Hoffman, C. H. Ahn, and L. Klein, Phys. Rev. B 79, 092406
2009.
5R. P. van Gorkom, J. Caro, T. M. Klapwijk, and S. Radelaar, Phys. Rev. B
63, 134432 2001.
6R. Ramos, S. K. Arora, and I. V. Shvets, Phys. Rev. B 78, 214402 2008.
7X. Hong, A. Posadas, A. Lin, and C. H. Ahn, Phys. Rev. B 68, 134415
2003.
8M. C. Smoak, P. A. Ryan, F. Tsui, T. K. Nath, R. A. Rao, D. Lavric, and
C. B. Eom, J. Appl. Phys. 87, 6764 2000.
9J. O’Donnell, M. Onellion, M. S. Rzchowski, J. N. Eckstein, and I. Bo-
zovic, J. Appl. Phys. 81, 4961 1997.
10W. Limmer, J. Daeubler, L. Dreher, M. Glunk, W. Schoch, S. Schwaiger,
and R. Sauer, Phys. Rev. B 77, 205210 2008.
11A. Schuhl, F. Nguyen Van Dau, and J. R. Childress, Appl. Phys. Lett. 66,
2751 1995.
12Y. Bason, L. Klein, J.-B. Yau, X. Hong, J. Hoffman, and C. H. Ahn, J.
Appl. Phys. 99, 08R701 2006.
023916-3 Naftalis et al. J. Appl. Phys. 106, 023916 2009


Anisotropic magnetoresistance and planar Hall effect in epitaxial films
of La0.7Ca0.3MnO3

DigitalCommons@University of Nebraska

University of Nebraska - LincolnDigitalCommons@University of Nebraska - LincolnXia Hong Publications Research Papers in Physics and Astronomy2009Anisotropic magnetoresistance and planar Halleffect in epitaxial films of La0.7Ca0.3MnO3N. NaftalisY. BasonJ. HoffmanX. HongC. H. AhnSee next page for additional authorsFollow this and additional works at: https://digitalcommons.unl.edu/physicshongPart of the Atomic, Molecular and Optical Physics Commons, and the Engineering PhysicsCommonsThis Article is brought to you for free and open access by the Research Papers in Physics and Astronomy at DigitalCommons@University of Nebraska -Lincoln. It has been accepted for inclusion in Xia Hong Publications by an authorized administrator of DigitalCommons@University of Nebraska -Lincoln.AuthorsN. Naftalis, Y. Bason, J. Hoffman, X. Hong, C. H. Ahn, and L. KleinAnisotropic magnetoresistance and planar Hall effect in epitaxial filmsof La0.7Ca0.3MnO3N. Naftalis,1,a Y. Bason,1 J. Hoffman,2 X. Hong,2 C. H. Ahn,2 and L. Klein11Department of Physics, Nano-magnetism Research Center, Institute of Nanotechnologyand Advanced Materials, Bar-Ilan University, Ramat-Gan 52900, Israel2Department of Applied Physics, Yale University, New Haven, 06520-8284 Connecticut, USAReceived 23 April 2009; accepted 18 June 2009; published online 22 July 2009We measured the anisotropic magnetoresistance AMR and the planar Hall effect PHE in a 001oriented epitaxial thin film of La0.7Ca0.3MnO3 LCMO as a function of magnetic field, temperature,and current direction relative to the crystal axes. We find that both AMR and PHE in LCMO dependstrongly on the current orientation relative to the crystal axes, and we demonstrate the applicabilityof AMR and PHE equations based on a fourth order magnetoresistance tensor consistent with thefilm symmetry. © 2009 American Institute of Physics. DOI: 10.1063/1.3176934I. INTRODUCTIONDoped manganites have been extensively studied sincethe observation of colossal magnetoresistance.1 Special at-tention has been given to the magnetotransport properties ofthese materials, including their anisotropic magnetoresis-tance AMR and planar Hall effect PHE.2,3 Recent studiesof c-oriented La0.8Sr0.2MnO3 LSMO thin films show thatfor a correct description of the AMR and the PHE in thiscompound, one needs to take into consideration the crystal-line contribution and expand the magnetoresistance tensor tofourth order using both the angle  between the magnetiza-tion M and the 100 and the angle  between the currentJ and the 100 see inset of Fig. 1a.4 Based on thisexpansion, the AMR, which describes the changes in thelongitudinal resistivity long, and the PHE, which describesthe changes in the transverse resistivity trans, are given aslong = A cos2 − 2 + B cos2 + 2 + C cos4 + D1andtrans = A sin2 − 2 − B sin2 + 2 . 2Here we study the AMR and the PHE in the manganiteLa0.7Ca0.3MnO3 LCMO. Previous studies of long and transin this compound used the equations valid for amorphousand polycrystalline films, for whichlong =  +  − cos2  , 3trans =  − sin  cos  , 4where  and  are the resistivities parallel and perpendicu-lar to the magnetization, respectively, and  is the anglebetween J and M; i.e., =−. While deviations from Eqs.3 and 4 were observed for LCMO,3 they were attributedto various extrinsic sources, and the applicability of theequations to LCMO was not questioned. Here we show thatEqs. 3 and 4 are not applicable, while Eqs. 1 and 2provide a good description of long and trans in LCMO. Wenote that when J is along 100 or 010, Eq. 1 reduces tolong=C0+C1 cos2 +C2 cos4 , a form used before to ac-count for crystal contribution in various magnetic films in-cluding epitaxial films of Fe Ref. 5 and Fe3O4.6II. SAMPLE CHARACTERIZATIONThe thin films used for this study are 001 oriented ep-itaxial thin films of LCMO grown on single crystal SrTiO3100 using off-axis magnetron sputtering. The growth tem-perature is 660 °C with process gases of 80% argon and20% oxygen at a pressure of 150 mTorr.7 The deposition rateis 1 nm /min and the sample is cooled in 1 atm O2. Noadditional postannealing is performed. X-ray diffractionmeasurements suggest that the film is partially relaxed, sinceits c-axis lattice constant 3.85 Å is less than the bulk value3.86 Å. X-ray reflectivity and -2 scans show that the filmwhose measurements are presented here is 32 nm in thick-aElectronic mail: naftaln@mail.biu.ac.il.0408012001230 50 100 150 200 250 300(ρ(0)-ρ(5T))/ρ(5T)[%]µBperf.u.T [K](b)020406080100H=0 TH=5 Tρ[mΩcm](a)FIG. 1. Color online a Temperature dependence of the resistivity  inzero field open symbols and in a field of 5 T close symbols. Inset: Asketch of the angles  and  used in Eqs. 1 and 2. b Magnetization inunits of B / f.u. as a function of temperature while cooling in a field of 2000Oe along 110, and magnetoresistance as a function of temperature in anin-plane field of 5 T.JOURNAL OF APPLIED PHYSICS 106, 023916 20090021-8979/2009/1062/023916/3/$25.00 © 2009 American Institute of Physics106, 023916-1ness. The film was patterned by photolithography to allowlong and trans measurements, with J at different angles relative to 100. Figure 1a presents the resistivity data ofthis film in zero field and in 5 T. The zero field resistivitypeak temperature is 275 K, close to the bulk value of thiscomposition, and the effect of the applied field is typical.Figure 1b presents magnetization as a function of tempera-ture while cooling in a field of 2000 Oe applied along 110,and magnetoresistance in an in-plane field of 5 T. The filmsexhibit biaxial magnetocrystalline anisotropy with easy axesalong 110 directions. This is demonstrated in Fig. 2, whichshows that these are the directions of the remanent magneti-zation obtained after applying and removing a magnetic fieldin different directions. The biaxial anisotropy we find is con-sistent with Ref. 8 while in Ref. 9 the easy axes are along100. The origin of this discrepancy is unclear.III. RESULTS AND DISCUSSIONFigure 3 shows long and trans measurements at T=125 K. For convenience we subtract from long its averagevalue, which is denoted as D in Eq. 1, and define it aslong. The measurements were preformed on patterns withdifferent J directions relative to 100  as a function of themagnetization direction relative to 100 . The measure-ments were taken with a constant magnetic field of 4 T ro-tating in the plane of the film. The magnitude of the magneticfield we use is much larger than the anisotropy field; hence,the magnetization orientation is in the direction of the ap-plied field. The deviation of the observed behavior from Eqs.3 and 4, and the contribution of crystal symmetry arequite evident. Despite the fact that both long and trans ap-pear sinusoidal, the amplitudes of long and trans for a given are different and they both depend on , inconsistent withEqs. 3 and 4 according to which all amplitudes should bethe same. Moreover, Fig. 4 shows that at T=25 K the crystalsymmetry contribution becomes prominent and long exhib-its contributions with fourfold symmetry. Figure 4 alsoshows that exactly the same behavior is observed for differ-ent fields between 2 and 5 T indicating that the magnetiza-tion follows the applied field. This indicates that the fourfoldsymmetry is an intrinsic property of the resistivity tensor asallowed by symmetry and not a result of the effect of mag-netocrystalline anisotropy on magnetic orientation. We notethat fourfold symmetry in the AMR data was observed inother systems such as Ga,MnAs.10In view of the failure of Eqs. 3 and 4, we try to fit thedata at T=125 K, for which we have AMR and PHE for fivedifferent ’s, with Eqs. 1 and 2. We find that the samefour fitting parameters A=−8.79, B=−6.41, C=0.53, and D=6241 which is a constant shift provide a good fit to all tendifferent AMR and PHE curves. This indicates that Eqs. 1and 2, which were used successfully to fit the AMR and thePHE data of LSMO,4 provide a good description of the AMRand the PHE data for LCMO, as well.The reported  dependence of the amplitude is importantfor applications. Designing sensing devices11 or memorydevices12 with manganites can benefit from increasing thesignal by having the current in particular directions for whichthe AMR or the PHE signals attain their maximum values.As we can see, trans obtains its largest amplitude for = /4 while the PHE and the AMR are often measuredwith =0, /2. The fact that the AMR and the PHE inLSMO and LCMO are described by Eqs. 1 and 2 and notby Eqs. 3 and 4, as previously assumed, suggests the needfor a more extensive study of the magnetotransport proper-ties of other manganites and other magnetic epitaxial films.-4040 45 90 135 180Field OnField Offρ trans[µΩcm]β [Deg.]T=150 KFIG. 2. Color online trans at T=150 K as a function of 	, the anglebetween an in-plane applied field of 600 Oe and 100. For each 	 trans ismeasured with field on and then with field off. The current direction is along100.-150150 45 90 135 180θ=0θ=15θ=45θ=60θ=90∆ρ long[µΩcm]α [Deg.]-15015ρ trans[µΩcm]FIG. 3. Color online long and trans of five patterns with different ’s asa function of  at T=125 K. The solid lines are fits to Eqs. 1 and 2.-4-20240 45 90 135 180H=2 TH=3 TH=4 TH=5 T∆ρ long[µΩcm]α [Deg.]FIG. 4. Color online long as a function of  for a pattern with = /4with four different applied fields, at T=25 K.023916-2 Naftalis et al. J. Appl. Phys. 106, 023916 2009ACKNOWLEDGMENTSL.K. acknowledges support by the Israel Science Foun-dation founded by the Israel Academy of Sciences and Hu-manities Grant No. 577/07. The work at Yale is supportedby NSF MRSEC Grant Nos. DMR 0520495 and DMR0705799, NRI, ONR, and the Packard Foundation.1M. McCormack, S. Jin, T. H. Tiefel, R. M. Fleming, J. M. Phillips, and R.Ramesh, Appl. Phys. Lett. 64, 3045 1994.2E. Favre-Nicolin and L. Ranno, J. Magn. Magn. Mater. 272–276, 18142004; J.-B. Yau, X. Hong, A. Posadas, C. H. Ahn, W. Gao, E. Altman, Y.Bason, L. Klein, M. Sidorov, and Z. Krivokapic, J. Appl. Phys. 102,103901 2007.3I. C. Infante, V. Laukhin, F. Sánchez, and J. Fontcuberta, Mater. Sci. Eng.,B 126, 283 2006; X. Jin, R. Ramos, Y. Zhou, C. McEvoy, and I. V.Shvets, J. Appl. Phys. 99, 08C509 2006.4Y. Bason, J. Hoffman, C. H. Ahn, and L. Klein, Phys. Rev. B 79, 0924062009.5R. P. van Gorkom, J. Caro, T. M. Klapwijk, and S. Radelaar, Phys. Rev. B63, 134432 2001.6R. Ramos, S. K. Arora, and I. V. Shvets, Phys. Rev. B 78, 214402 2008.7X. Hong, A. Posadas, A. Lin, and C. H. Ahn, Phys. Rev. B 68, 1344152003.8M. C. Smoak, P. A. Ryan, F. Tsui, T. K. Nath, R. A. Rao, D. Lavric, andC. B. Eom, J. Appl. Phys. 87, 6764 2000.9J. O’Donnell, M. Onellion, M. S. Rzchowski, J. N. Eckstein, and I. Bo-zovic, J. Appl. Phys. 81, 4961 1997.10W. Limmer, J. Daeubler, L. Dreher, M. Glunk, W. Schoch, S. Schwaiger,and R. Sauer, Phys. Rev. B 77, 205210 2008.11A. Schuhl, F. Nguyen Van Dau, and J. R. Childress, Appl. Phys. Lett. 66,2751 1995.12Y. Bason, L. Klein, J.-B. Yau, X. Hong, J. Hoffman, and C. H. Ahn, J.Appl. Phys. 99, 08R701 2006.023916-3 Naftalis et al. J. Appl. Phys. 106, 023916 2009

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Anisotropic magnetoresistance and planar Hall effect in epitaxial films of La0.7Ca0.3MnO3

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