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Atomic Hydrogen Cleaning of InP(100) for Preparation of a Negative Electron Affinity Photocathode
Authors
K. A. Elamrawi
H. E. Elsayed-Ali
M. A. Hafez
Publication date
1 January 1998
Publisher
ODU Digital Commons
Abstract
Atomic hydrogen cleaning is used to clean InP(100) negative electron affinity photocathodes. Reflection high-energy electron diffraction patterns of reconstructed, phosphorus-stabilized, InP(100) surfaces are obtained after cleaning at ∼400 °C. These surfaces produce high quantum efficiency photocathodes (∼8.5%), in response to 632.8 nm light. Without atomic hydrogen cleaning, activation of InP to negative electron affinity requires heating to ∼530 °C. At this high temperature, phosphorus evaporates preferentially and a rough surface is obtained. These surfaces produce low quantum efficiency photocathodes (∼0.1%). The use of reflection high-energy electron diffraction to measure the thickness of the deposited cesium layer during activation by correlating diffraction intensity with photoemission is demonstrated. © 1998 American Institute of Physics
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