DiSalvo, F. J.

Hambourger, Paul D.

English

Cleveland-Marshall College of Law

Cleveland State UniversityEngagedScholarship@CSUPhysics Faculty Publications Physics Department1980Hall-Coefficient and Resistivity at High Pressure in1T-TaS2Paul D. HambourgerCleveland State University, p.hambourger@csuohio.eduF. J. DiSalvoFollow this and additional works at: https://engagedscholarship.csuohio.edu/sciphysics_facpubPart of the Physics CommonsHow does access to this work benefit you? Let us know!Publisher's StatementCopyright 1980 American Institute of Physics. This article may be downloaded for personal use only.Any other use requires prior permission of the author and the American Institute of Physics. Thefollowing article appeared in < em>Bulletin of the American Physical Society 25 (1980): 200-200and may be found at http://www.aps.org/meetings/baps/.Repository CitationHambourger, Paul D. and DiSalvo, F. J., "Hall-Coefficient and Resistivity at High Pressure in 1T-TaS2" (1980). Physics Faculty Publications. 128.https://engagedscholarship.csuohio.edu/sciphysics_facpub/128This Article is brought to you for free and open access by the Physics Department at EngagedScholarship@CSU. It has been accepted for inclusion inPhysics Faculty Publications by an authorized administrator of EngagedScholarship@CSU. For more information, please contactlibrary.es@csuohio.edu.Original CitationHambourger, Paul D. and F. J. DiSalvo. "Hall-Coefficient and Resistivity at High Pressure in 1T-TaS2." Bulletin of the American PhysicalSociety 25 (1980): 200-200.BH 5 A New Class of La ered .Materials: La ered Ultra­Thin Coherent Structures LUCS. IVAN K. SCHULLER* K. MEYERA and CHARLES M. FALCO, Argonne National Lab. *-­We describe a new class of superconducting materials, Layered Ultrathin Coherent Struct~res (LUeS): .These materials are produced by sequent~ally depos1t1ng ultra­thin layers of materials using high rate magnetron sputtering or molecular beam evaporation. We present strong structural evidence (Auger and X-rays) that layers as thin 89 10 A can be prepared in this fashion. The supel'conducting properties (critical field, transition temperatures, etc.) are found to be similar to those of layered compounds. although the coupling in between layers is strong. l1lis is interpreted as layering induced changes in the electronic structure of the LUeS constituents. *Also of Physics Dept., Bucknell University, Lewisburg, Penn. **Work supported by the U. S. Department of Energy. BE 6 Low Temperature Electrical Properties of TiS2. B.J. BLUMENSTOCK, P.A. SCHROEDER, Michigan State U.* C.A. Kukkonen, W.J. Kaiser and E.li. Logothetis, Ford Motor Co.--E1ectrical resistivity, Hall coefficient and magnetoresistance of Ti1+xS2 single crystals with x < 0.06 have been measured between land 100 K. The resistivity of these crystals is of the form p - p(O) + p(T), where the residual resistiv~ty p(O) varies with the e1ec tron concentration as n1/3 . ,This dependence is. consistent with impurity scattering where the seatterers are also the source 0 f the carriers. It was previously reported that between 77 and 700 K, peT) varied as Tm where m was between 1. 85 and 2.3 depending on stoichiometry. The present measurements show that below 50 K. p(T) of all samples is close to T3. A tem­perature dependence with a power higher than T2 at low T is characteristic of phonon scattering' however the simple Bloch-Grilneisen theory predicts T5 at the lowest temperatures whereas the observed dependence remains T3 to at least 1.5 K. *Supported byN.S.F. Grant No; DMR-78-07892. BH 7 Hall Coefficient and Resistivity at High Pressure in IT-TaS2' P. D. HAMBOURGER, Cleveland ~.~ and F. J. DI SALVO, Bell Laboratories. --The Hall coefficient (RH) and resistivity (p) of IT­TaS2 have been measured over the range 1.5<T<290K under .hydrostatic pressure of 6.4 kBar. At this pres­sure the sample remains in the "quasicommensurate" charge-density-wave statel over our en\:ire temperature range. 2 ~ varies monotonically from ~ -6xlO-4 cm3/C at 290 K to '\i -2xlO-3 ~3/C at 1.5 K. ap/aT is neg­ative over most of the temperature range, with p(l.5 K)/p(290 K)~3. P is essentially temperature­independent for T<30 K. The data suggest that con­duction at low temperatures is not by hopping as ap­pears to be the case in the commensuratestate. l ,3,4 1F. J. Di Salvo and J. E. Graebner, Solid State Connuun. 23, 825 (1917).21. Tani, T. Osada, and S.Tanaka, Solid State Commun. ~, 269 (1977). 3P. D. Hambourger and F. J. Di Salvo, Bull. Am. Phys. Soc. 24. 445 (1979). 4p. 	 D. Hambourger and F. J. Di Salvo, Physica ! (in press) and references therein. BH 8 Band Structure and Interlayer Interactions of Thin Films of Transition Metal Dichalcogenides: TiS 2and zrS 2 * CYRUS UMRlGAR, D.S. WANG, D.E. ELLIS, R. KRAKAUER and M. POSTERNAK+, Northwestern U.--The poten­tial field in the Van der Waals gap between adjacent MX2 sand~iches in the layered transition metal dichalcoge­nides plays an important role in determining ionic transport of intercalates. The self-consistent energy bands, local density of states, work functions and charge density of thin films of the layered transition metal dichal10genides TiS and zrS are calculated by the2LAPW method. The results of calcnlations on single sandwich and double sandwich films are compared. The Coulomb potential in the gap is mapped as an aid in studying ionic transport in these materials. The elec­tronic structure of the intercalated system (TiS 2)-Li­(TiS ) is explored.Z*Research supported by the NSF-MRL program through the l.U. MRC, NSF-DMR, AFOSR and the Swiss NSF. Permanent address: EPF, Lausanne, Switzerland. IH. Krakauer, M. Posternak and A.J. Freeman. Phys. Rev. Bl9. 1706 (1979). BH 9 Electrical Transport Properties of FexNi NbSe2..!.. ALLAN T. MITCHELL and R.C. MORRIS, Florida State~~ A ·study of the Hall coefficient and resistivity of Fe Ni NbSe has been done for x and y in the range 0-0.332fo¥ t~mperatures 4-300K. Whereas Ni NbSe for x < 0.152shows little or no behavior which ca~ be associated with the interaction of a Ni moment with the conduction elec­trons, small concentrations of Ni in Fe Ni Nbse result2in pronounced changes in the low temper~tu¥e Hall coefficient from that of Fe + NbSe2 indicating an enchanced magnetic scatteri?f;JY due to the Ni. Higher concentrations of Ni affect both transport properties and give additional indication that the Ni and Fe impurities do not act independently but rather that the magnetic character of the Ni is strongly influenced by the pres­ence of the Fe. A comparison of the properties of the three systems will be presented to give an overall picture of the magnetic character of the Fe and Ni in this anisotropy matrix, the interaction between the two impurities, and interaction of the impurities with the charge carriers. *Supported by NSF Grant DMR 7821612. BH 10 Intrinsic Paramagnetic Moments in IT-TaS2. F. J. DISALVO and. J. V. WASZCZAK~ Bell Laboratories - Recently Fukuyama and YosidaI suggested that the low temperature magnetoresistance of IT-TaS2 could be explained if both Anderson localization and electron correlations are included. This leads to a net paramagnetic localized spin density. We show that high purity IT-TaS2 has a low temperature (6-B5K) susceptibility X = 0.80 x 10-6/(T-O.4) -0.196 x 10-6 (emu/g), that can not be explained by .the measured low levels of impuri­ties. The impurities were: Fe (5-l0ppm), Ni(l-5ppm), Cu(l-5ppm). Further, Fe is non magnetic in IT-TaS2 at low temperatures. 2 Below 4K the susceptibility becomes non-linear in magnetic field, with an extrapolated non zero magnetizatj,on at zero field. Other results and models will be presented. lH. Fukuyama and K. Yosida, J. Phys. Soc. Japan 46,1522 (1979).2M. Eibschlitz and F. J. DiSalvo, Phys. Rev. Letts. 36,104 (1976). BH 11 NMR Studies in HxTaf:i2 and DxTaS2' T . . R. HALBERT ~ A. J. JACOBSON, R. L. KLEINBERG, and B. G. SILBERNAGEL. Exxon Research and Engineering Co •. --Recent neutron dif­fraction studies of HxTaSZ layered compounds indicate the inclusion of protons into the layers of the TaS2 host. 1 The present wideline and transient NMR results reflect the strong coupling of hydrogen atoms with their environment expected in such circumstances. RxTaS2and . DxTaS2 materials with a' .composition of x = 0.34· were pre­pared electrochemically and their structure was verified by x-ray diffraction. Wideline studies of the 2D NMR abs orption indica,te a substantial c~upling constant: e2qQ/h ~68 kHz. The field gradient at the site of the 2D nucleus is ~lov/R2, roughly one thousand times larger than observed for LixTaS2' where theLi species resides outside of the layers of the TaS2 hostIJiaterial. Trans- . ient measurements of the 1H spin latticei relaxation in Ho.34TaS2 reveal a Korringa-like behavior for temperature between 150 K and 300 K, with TIT ~109 sec-K. This mag­nitude is comparable to that in Li metal (~43 sec-K), suggesting relatively strong coupling with-the electrons 200 

Hall-Coefficient and Resistivity at High Pressure in 1T-TaS2

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Hall-Coefficient and Resistivity at High Pressure in 1T-TaS2

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