Oscillatory tunnel magnetoresistance in double barrier magnetic tunnel junctions

Abstract

We report an unconventional oscillatory tunnel magnetoresistance as a function of the applied bias in double barrier magnetic tunnel junctions that were made of two Al2O3 barriers sandwiched by three ferromagnetic layers. When the center ferromagnetic layer is aligned antiparallel to the top and bottom magnetic layers, a distinct magnetoresistance oscillation appears with respect to the increase of the bias voltage at 4.2 K and at room temperature. The period of the oscillation is about 1.6 mV