Distributed-feedback GaAs-GaAlAs diode lasers with separate optical and carrier confinement have been successfully operated under dc bias up to room temperature. They lased in a single longitudinal mode with a threshold current density of 0.94 kA/cm^2 at 170 K and 3.5 kA/cm^2 at 300 K

Aiki, K.

Nakamura, M.

Umeda, J.

Yariv, A.

Caltech Authors - Main

Downloaded 24 May 2006 to 131.215.240.9. Redistribution subject to AIP license or copyright, see http://apl.aip.org/apl/copyright.jsp
Downloaded 24 May 2006 to 131.215.240.9. Redistribution subject to AIP license or copyright, see http://apl.aip.org/apl/copyright.jsp
Downloaded 24 May 2006 to 131.215.240.9. Redistribution subject to AIP license or copyright, see http://apl.aip.org/apl/copyright.jsp


cw operation of distributed-feedback GaAs-GaAlAs diode lasers at temperatures up to 300 K

https://authors.library.caltech.edu/5287/1/NAKapl75.pdf

cw operation of distributed-feedback GaAs-GaAlAs diode lasers at temperatures up to 300 K

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