The role of short-range order in producing a pseudogap in the density of states ρ(E) of an elemental amorphous material is investigated. An approximate expression for ρ(E) which emphasizes short-range order and neglects all long-range order is derived from multiple-scattering theory. This expression is used to study the influence of short-range order consisting of two atoms, a single bond, and eight atoms in the staggered and eclipsed bonding configurations on ρ(E). The results of numerical calculation for amorphous sp3-bonded C, amorphous Si, and amorphous Ge are reported. These results suggest that the pseudogap in ρ(E) may be attributed to the short-range order
