Cilio, Edgar

Hossain, Maruf

Lostetter, Alexander B.

Mantooth, H. Alan

McNutt, Ty R.

UARK (University of Arkansas )

Journal of the Arkansas Academy of Science Volume 57 Article 30 2003 Parameter Extraction Software for Compact Diode Model Maruf Hossain University of Arkansas, Fayetteville Edgar Cilio University of Arkansas, Fayetteville Ty R. McNutt University of Arkansas, Fayetteville Alexander B. Lostetter University of Arkansas, Fayetteville H. Alan Mantooth University of Arkansas, Fayetteville Follow this and additional works at: https://scholarworks.uark.edu/jaas  Part of the VLSI and Circuits, Embedded and Hardware Systems Commons Recommended Citation Hossain, Maruf; Cilio, Edgar; McNutt, Ty R.; Lostetter, Alexander B.; and Mantooth, H. Alan (2003) "Parameter Extraction Software for Compact Diode Model," Journal of the Arkansas Academy of Science: Vol. 57 , Article 30. Available at: https://scholarworks.uark.edu/jaas/vol57/iss1/30 This article is available for use under the Creative Commons license: Attribution-NoDerivatives 4.0 International (CC BY-ND 4.0). Users are able to read, download, copy, print, distribute, search, link to the full texts of these articles, or use them for any other lawful purpose, without asking prior permission from the publisher or the author. This General Note is brought to you for free and open access by ScholarWorks@UARK. It has been accepted for inclusion in Journal of the Arkansas Academy of Science by an authorized editor of ScholarWorks@UARK. For more information, please contact scholar@uark.edu. 199Parameter Extraction Software For Compact Diode ModelMaruf Hossain, Edgar Cilio,Ty R. McNutt, A.B.Lostetter, and H.Alan Mantooth*Sic Research GroupDept. of Electrical EngineeringUniv. of Arkansas3217 Bell Engineering CenterFayetteville, AR 72701¦"Corresponding AuthorIntroductionIA reliable device model is crucial for the developmentd implementation of a circuit design. However, thesation of a high quality model requires a significantlount of timeand money. The software package presentedthis paper seeks to minimize the timeand money investedthe realization of a high quality model for SiC Schottky,erged PiN Schottky, and PiN Power diodes based oncNutt and Mantooth's Comprehensive SiC Diode model[cNutt et al, 2001, 2002). This software can be used fortraction of any other device model parameters with littleadification (Ma et al., 1994; Krishna et al, 1995., Bai et al.,01;Lauxetal., 1991).IThe software package is a user-friendly three-stepjorithm that provides the user with efficient parametertraction of the device. Initially, the Slope Calculationogram determines the on-state resistance of the diode,condly, the ONSTMSR program carries out the on-staterameter calculation; and lastly, the TPE programrforms the extraction of the transient parameters. Allof3 programs have been created with LabWindows/CVIth the exception ofTPE, which utilizes LabWindows/CVIdSaber.IOn-state Resistance Calculation.-- Slope Calculationtermines the on-state resistance of the diode. Measuredta of the voltage across the diode and the current goingough ithave to be supplied in any type of data file. Theipe Calculation software analyzes the data, plots the voltageainst the current, and displays the resulting curve astailed in Fig. 2. In order to find the on-resistance, Slopedculation allows the user to find the slope and inverseipe at any given point in the curve. The value obtained forIinverse slope is the on-state resistance of the diode,jure 1 shows the output of a test run. Slope Calculationrtware allows the user to calculate the on-state resistance,¦ diodes and transistors. Figure 1 shows the calculation ofipe for a transistor. From this figure it can be seen that the•tware has four check boxes at the top to allow the user to)t four different curves at the same time or any number of)ts inwhich the user might be interested. The user can usethe two cursors to obtain two sets of data points. Thosepoints are shown in their specific spaces called 1st Xcoordinate, 2nd X coordinate, 1st Y coordinate, and 2nd Ycoordinate. The user is given the value of slope and inverseslope by pressing the calculate slope and inverse slopebuttons. Notice that the best value for the on-state isobtained at the point where the curve starts increasinglinearly. This value of resistance will be used byONSTMSR.On-state Parameter Calculation.~This software carriesout the results of Slope Calculation software and uses this toextract the parameter of any diode. Figure 3 shows an on-Any data fileInput ? Plot curve in the graph ? Two differentcursors snapthe data points.ISnapped data"~ ; I f——————; 1 points are setResults 1 < | Hit Calculate button |4 | jn the output.Fig. 2. Flow chart of slope calculation software.Fig. 1. Output from slope calculation software.Journal of the Arkansas Academy of Science, Vol. 57, 2003199Journal of the Arkansas Academy of Science, Vol. 57 [2003], Art. 30Published by Arkansas Academy of Science, 2003Jr>HFig. 3. On state diode model with no forward recovery.state diode model with no forward recovery. The fourdifferent current components flow through four paralleldiodes. This software extracts eight parameters of these fourdiodes. To extract the parameters, the software uses theformulaI=Is(evJ/n*vt) Equation (1)where vjis the voltage across the diode, and Ig and n are themodel parameters and are different for the four diodesillustrated in Fig. 3. The parameters are I§R,ISgL IsE'nR,nL,nE,and nH.The user inputs the value for these eightparameters as initial guesses. The software then uses thesevalues and calculates the total diode current for each diodevoltage using equation (1). These current and voltage valuesare then plotted in the graph. Whenever the plot of the sumof all currents and voltages matches the measured currentand voltage plot, the user gets the parameters from theoutput shown in Fig. 4. This software also allows users to«8«£-3 H , ;JHbbH !Onyoit 9 MR jfTHM HH i<IViV(Ma)?nAIII (? ISE 5|ia«tS N£ 3M 9O»A)II f> ISH g'OOCC- HHdl» l^*1/f""^°1 I"-V>VDI 04-H[ltV.VP| |IHV«VO||SUMV.TO| 9oo o'i 02 a'} 04 05 oc 07 oe as ic m iSi]Fig. 4. Output from On-state parameter extraction software.Fig. 5. Flow chart of on-state parameter calculation software.GrnphicnlUser InterfaceRovers* Recovery Simulation Errot calculation beiwoon4meosuied and simulated didoGetting file 4LabWlndows/CVi ¦ i-Mf.Eiror mnln>z«(cn using. .venp.,^ I tJ^ tLafcWIretows/CVIFig. 6. Flow chart of transient parameter extraction software.select the number of parallel diodes needed for their diodemodel. Figure 5 shows the flowchart for the on-stateparameter calculation software. From the flowchart, it canbe seen that any data file is plotted in the graph first. Thenthe slope calculation software calculates the on-resistance.On-resistance is the inverse slope of the curve. Next the userinputs some initial values forISR,ISSL)ISE,ISH,nR,nL,nE,and nj_[ to the specific box of the output. The softwarecollects that input and uses itto calculate the diode currentby Equation (1). In the process, the software calculates thediode junction voltage using the initial diode currents. Aftereach calculation, the software plots one point of current andvoltage. After each plot, the total diode voltage (Vrj) isincremented by 0.02V. After plotting the entire curve, thesoftware compares the computed plot with the experimentalplot. If these two plots match, the user input values aredetermined to be the model parameters. Otherwise, the userJournal of the Arkansas Academy of Science, Vol. 57, 2003200200Journal of the Arkansas Academy of Science, Vol. 57 [2003], Art. 30https://scholarworks.uark.edu/jaas/vol57/iss1/30201Maruf Hossain, Edgar Cilio,Ty R. McNutt,A.B. Lostetter, and H. Alan Mantoothchanges the input value, and the process is repeated.Transient Parameters Extraction.--TPE extracts theparameter of the diode during the reverse recovery. Thissoftware is still under development. Nevertheless, theoutline of this routine has been determined and will beimplemented as described in this section.LabWindows/CVI delivers the user-interface component ofthe program. Initially, measured transient data of a diodereverse recovery circuit is provided to Saber. Saber willsimulate the reverse recovery circuit and compare it to themeasured data. Using the Levenberg-Marquardt (McNutt,2002) optimization routine, the difference between themeasured data and the simulated data willbe minimized.After the minimization, the extraction software willprovidethe new set of parameters. During the entire process, Saberwill work in batch mode. LabWindows/CVI willcommunicate with Saber and export parameter values andKplay them. Figure 6 describes the data flow manipulationt TPE willperform.ConclusionsIParameter extraction software has been presented ins paper. This software can accurately model SiC Schottky,;reged PiN Schottky, and PiN Power diodes based on:Nutt and Mantooth's Comprehensive SiC Diode modelcNutt, 2001). The parameter extraction is carried out inee different phases: on-state resistance extraction, on-te parameter extraction, and transient parameterraction. The software presented here provides the user a:ndly environment, while delivering accurate, reliableameters that can be use for circuit design in differingDlications.Literature CitedrY., and Goldsman, N. 2001. Modeling of nonuniformSiGe heterostructure. Semiconductor Device ResearchSymposium, 2001 International:244-247.rshna, K., and Director, S. W. 1995. A novelmethodology for statistical parameter extraction.IEEE/ACM International Conference:696-699.rx, S. E., and Fischetti, V. 1991. Simulation of smallsemiconductor devices using a coupled Monte Carlo-Poisson approach. Proceedings IEEE/CornellConference on Advance Concepts:338-346rC.L., and Lauritzen, P. O. 1994. A systematictechnique to modeling of power semiconductor devicesfor power electronic simulation. Northcon/94Conference Record:54-59.rtfutt, T. R. 2001. Silicon Carbide PiN Schottky PowerDiode Models Implemented in the Saber CircuitSimulator. Conf. Proc. of IEEE Power ElectronicsSpecialists Conference (PESC) 4:2103-2108.McNutt, T. R., Hefner, A.R., Mantooth, H.A.,Duliere,J. L.,Berning, D.W., and Singh, R. 2002. ParameterExtraction Sequence for Silicon Carbide Schottky,Merged PiN Schottky, and PiN Power Diode Models.Conf. Proc. of IEEE Power Electronics SpecialistsConference (PESC) 3:1269-1276.Journal of the Arkansas Academy of Science, Vol. 57, 2003201Journal of the Arkansas Academy of Science, Vol. 57 [2003], Art. 30Published by Arkansas Academy of Science, 2003

English

Parameter Extraction Software for Compact Diode Model

ScholarWorks@UARK

Journal of the Arkansas Academy of ScienceVolume 57 Article 302003Parameter Extraction Software for Compact DiodeModelMaruf HossainUniversity of Arkansas, FayettevilleEdgar CilioUniversity of Arkansas, FayettevilleTy R. McNuttUniversity of Arkansas, FayettevilleAlexander B. LostetterUniversity of Arkansas, FayettevilleAlan H. MantoothUniversity of Arkansas, FayettevilleFollow this and additional works at: http://scholarworks.uark.edu/jaasPart of the VLSI and Circuits, Embedded and Hardware Systems CommonsThis article is available for use under the Creative Commons license: Attribution-NoDerivatives 4.0 International (CC BY-ND 4.0). Users are able toread, download, copy, print, distribute, search, link to the full texts of these articles, or use them for any other lawful purpose, without asking priorpermission from the publisher or the author.This General Note is brought to you for free and open access by ScholarWorks@UARK. It has been accepted for inclusion in Journal of the ArkansasAcademy of Science by an authorized editor of ScholarWorks@UARK. For more information, please contact scholar@uark.edu.Recommended CitationHossain, Maruf; Cilio, Edgar; McNutt, Ty R.; Lostetter, Alexander B.; and Mantooth, Alan H. (2003) "Parameter Extraction Softwarefor Compact Diode Model," Journal of the Arkansas Academy of Science: Vol. 57 , Article 30.Available at: http://scholarworks.uark.edu/jaas/vol57/iss1/30199Parameter Extraction Software For Compact Diode ModelMaruf Hossain, Edgar Cilio,Ty R. McNutt, A.B.Lostetter, and H.Alan Mantooth*Sic Research GroupDept. of Electrical EngineeringUniv. of Arkansas3217 Bell Engineering CenterFayetteville, AR 72701¦"Corresponding AuthorIntroductionIA reliable device model is crucial for the developmentd implementation of a circuit design. However, thesation of a high quality model requires a significantlount of timeand money. The software package presentedthis paper seeks to minimize the timeand money investedthe realization of a high quality model for SiC Schottky,erged PiN Schottky, and PiN Power diodes based oncNutt and Mantooth's Comprehensive SiC Diode model[cNutt et al, 2001, 2002). This software can be used fortraction of any other device model parameters with littleadification (Ma et al., 1994; Krishna et al, 1995., Bai et al.,01;Lauxetal., 1991).IThe softwarepackage is a user-friendly three-stepjorithm that provides the user with efficient parametertraction of the device. Initially, the Slope Calculationogram determines the on-state resistance of the diode,condly, the ONSTMSR program carries out the on-staterameter calculation; and lastly, the TPE programrforms the extraction of the transient parameters. Allof3 programs have been created with LabWindows/CVIth the exception ofTPE, which utilizes LabWindows/CVIdSaber.IOn-state Resistance Calculation.-- Slope Calculationtermines the on-state resistance of the diode. Measuredta of the voltage across the diode and the current goingough ithave to be supplied in any type of data file. Theipe Calculation software analyzes the data, plots the voltageainst the current, and displays the resulting curve astailed in Fig. 2. In order to find the on-resistance, Slopedculation allows the user to find the slope and inverseipe at any given point in the curve. The value obtained forIinverse slope is the on-state resistance of the diode,jure 1 shows the output of a test run. Slope Calculationrtware allows the user to calculate the on-state resistance,¦ diodes and transistors. Figure 1 shows the calculation ofipe for a transistor. From this figure it can be seen that the•tware has four check boxes at the top to allow the user to)t four different curves at the same time or any number of)ts inwhich the user might be interested. The user can usethe two cursors to obtain two sets of data points. Thosepoints are shown in their specific spaces called 1st Xcoordinate, 2nd X coordinate, 1st Y coordinate, and 2nd Ycoordinate. The user is given the value of slope and inverseslope by pressing the calculate slope and inverse slopebuttons. Notice that the best value for the on-state isobtained at the point where the curve starts increasinglinearly. This value of resistance will be used byONSTMSR.On-state Parameter Calculation.~This software carriesout the results of Slope Calculation software and uses this toextract the parameter of any diode. Figure 3 shows an on-Any data fileInput ? Plot curve in the graph ? Two differentcursors snapthe data points.ISnapped data"~ ; I f——————; 1 points are setResults 1 < | Hit Calculate button |4 | jn the output.Fig. 2. Flow chart of slope calculation software.Fig. 1. Output from slope calculation software.Journal of the Arkansas Academy of Science, Vol. 57, 2003199Journal of the Arkansas Academy of Science, Vol. 57 [2003], Art. 30Published by Arkansas Academy of Science, 2003Jr>HFig. 3. On state diode model with no forward recovery.state diode model with no forward recovery. The fourdifferent current components flow through four paralleldiodes. This software extracts eight parameters of these fourdiodes. To extract the parameters, the software uses theformulaI=Is(evJ/n*vt) Equation (1)where vjis the voltage across the diode, and Ig and n are themodel parameters and are different for the four diodesillustrated in Fig. 3. The parameters are I§R,ISgL IsE'nR,nL,nE,and nH.The user inputs the value for these eightparameters as initial guesses. The software then uses thesevalues and calculates the total diode current for each diodevoltage using equation (1). These current and voltage valuesare then plotted in the graph. Whenever the plot of the sumof all currents and voltages matches the measured currentand voltage plot, the user gets the parameters from theoutput shown in Fig. 4. This software also allows users to«8«£-3 H , ;JHbbH !Onyoit 9 MR jfTHM HH i<IViV(Ma)?nAIII (? ISE 5|ia«tS N£ 3M 9O»A)II f> ISH g'OOCC- HHdl» l^*1/f""^°1 I"-V>VDI 04-H[ltV.VP| |IHV«VO||SUMV.TO| 9oo o'i 02 a'} 04 05 oc 07 oe as ic m iSi]Fig. 4. Output from On-state parameter extraction software.Fig. 5. Flow chart of on-state parameter calculation software.GrnphicnlUser Interface Rovers* Recovery Simulation Errot calculation beiwoon4meosuied and simulated didoGetting file 4LabWlndows/CVi ¦ i-Mf.Eiror mnln>z«(cn using..venp.,^ I tJ^ tLafcWIretows/CVIFig. 6. Flow chart of transient parameter extraction software.select the number of parallel diodes needed for their diodemodel. Figure 5 shows the flowchart for the on-stateparameter calculation software. From the flowchart, it canbe seen that any data file is plotted in the graph first. Thenthe slope calculation software calculates the on-resistance.On-resistance is the inverse slope of the curve. Next the userinputs some initial values forISR,ISSL)ISE,ISH,nR,nL,nE,and nj_[ to the specific box of the output. The softwarecollects that input and uses itto calculate the diode currentby Equation (1). In the process, the software calculates thediode junction voltage using the initial diode currents. Aftereach calculation, the software plots one point of current andvoltage. After each plot, the total diode voltage (Vrj) isincremented by 0.02V. After plotting the entire curve, thesoftware compares the computed plot with the experimentalplot. If these two plots match, the user input values aredetermined to be the model parameters. Otherwise, the userJournal of the Arkansas Academy of Science, Vol. 57, 2003200200Journal of the Arkansas Academy of Science, Vol. 57 [2003], Art. 30http://scholarworks.uark.edu/jaas/vol57/iss1/30201Maruf Hossain, Edgar Cilio,Ty R. McNutt,A.B. Lostetter, and H. Alan Mantoothchanges the input value, and the process is repeated.Transient Parameters Extraction.--TPE extracts theparameter of the diode during the reverse recovery. Thissoftware is still under development. Nevertheless, theoutline of this routine has been determined and will beimplemented as described in this section.LabWindows/CVI delivers the user-interface component ofthe program. Initially, measured transient data of a diodereverse recovery circuit is provided to Saber. Saber willsimulate the reverse recovery circuit and compare it to themeasured data. Using the Levenberg-Marquardt (McNutt,2002) optimization routine, the difference between themeasured data and the simulated data willbe minimized.After the minimization, the extraction software willprovidethe new set of parameters. During the entire process, Saberwill work in batch mode. LabWindows/CVI willcommunicate with Saber and export parameter values andKplay them. Figure 6 describes the data flow manipulationt TPE willperform.ConclusionsIParameter extraction software has been presented ins paper. This software can accurately model SiC Schottky,;reged PiN Schottky, and PiN Power diodes based on:Nutt and Mantooth's Comprehensive SiC Diode modelcNutt, 2001). The parameter extraction is carried out inee different phases: on-state resistance extraction, on-te parameter extraction, and transient parameterraction. The software presented here provides the user a:ndly environment, while delivering accurate, reliableameters that can be use for circuit design in differingDlications.Literature CitedrY., and Goldsman, N. 2001. Modeling of nonuniformSiGe heterostructure. Semiconductor Device ResearchSymposium, 2001 International:244-247.rshna, K., and Director, S. W. 1995. A novelmethodology for statistical parameter extraction.IEEE/ACM International Conference:696-699.rx, S. E., and Fischetti, V. 1991. Simulation of smallsemiconductor devices using a coupled Monte Carlo-Poisson approach. Proceedings IEEE/CornellConference on Advance Concepts:338-346rC. L., and Lauritzen, P. O. 1994. A systematictechnique to modeling of power semiconductor devicesfor power electronic simulation. Northcon/94Conference Record:54-59.rtfutt, T. R. 2001. Silicon Carbide PiN Schottky PowerDiode Models Implemented in the Saber CircuitSimulator. Conf. Proc. of IEEE Power ElectronicsSpecialists Conference (PESC) 4:2103-2108.McNutt, T. R., Hefner, A.R., Mantooth, H.A.,Duliere,J. L.,Berning, D.W., and Singh, R. 2002. ParameterExtraction Sequence for Silicon Carbide Schottky,Merged PiN Schottky, and PiN Power Diode Models.Conf. Proc. of IEEE Power Electronics SpecialistsConference (PESC) 3:1269-1276.Journal of the Arkansas Academy of Science, Vol. 57, 2003201Journal of the Arkansas Academy of Science, Vol. 57 [2003], Art. 30Published by Arkansas Academy of Science, 2003

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Parameter Extraction Software for Compact Diode Model

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