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碳化硅衬底沉积高取向金刚石薄膜
Authors
曹阳
满卫东
+4 more
吕继磊
刘伟
孙洁
江南
Publication date
1 January 2017
Publisher
Abstract
采用直流辉光放电等离子体设备在单晶碳化硅表面沉积高晶取向金刚石薄膜,研究了预处理方法、基片温度以及甲烷浓度(甲烷与氢气的体积比)对金刚石薄膜晶粒取向的影响。用SEM、Raman等测试方法对金刚石薄膜进行表征。结果表明:研磨处理可以提高金刚石形核密度,高的形核密度有利于金刚石薄膜的沉积;过高或过低的基片温度会使得金刚石薄膜表现出(111)面生长的趋势;高甲烷浓度和低甲烷浓度也会使得金刚石薄膜晶粒取向发生改变。最终采用850℃以及5%甲烷浓度这一沉积参数进行金刚石薄膜的沉积,制备出了取向度非常好的(100)面金刚石薄膜
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Last time updated on 10/08/2019
Institutional Repository of Ningbo Institute of Material Technology & Engineering, CAS
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Last time updated on 07/01/2019