The design of SRAM has evolved to suffice the need of the industry in terms of speed, power dissipation and other parameters. This paper proposed a SRAM design and an attempt has been made to design circuits using dynamic logic and pass transistor logic to obtain better performance in terms of speed, power dissipation and throughput. The dynamic logic would maintain voltage degradation by using the PMOS and NMOS transistor just as the CMOS logic, even though the design cell uses majority NMOS transistors. The proposed circuits are simulated using BSIM for different CMOS feature sizes of 70 nm, 90 nm, 120 nm and 180 nm. The results obtained have been analysed and shows that the proposed circuit of 8T performs much better as compared to other circuit configurations. There is significant improvement in power dissipation by 99.64 %, delay by 99.9 %, throughput of 490 Mbps and power delay product of 99.96 %
