The miniaturization of MOS transistors has increased the integration density and speed of operation of the circuits. This miniaturization has led to parasitic phenomena that degrade the current-voltage characteristics. The EKV MOSFET Model resolves this problem, this component enables to progress in miniaturization. This paper presents a simulation of MOSFET ‘EKV model’ using Matlab to identify the different output and transfer characteristics, transconductance gm, Methodology gm/ID, etc