In this work, we investigated the sensing challenges of spin-transfer torque MRAMs structured with perpendicular
magnetic tunnel junctions with a high tunneling magnetoresistance ratio in a low resistance-area product. To overcome
the problems of reading this type of memory, we have proposed a voltage sensing amplifier topology and compared its
performance to that of the current sensing amplifier in terms of power, speed, and bit error rate performance. We have
verified that the proposed sensing scheme offers a substantial improvement in bit-error-rate performance. To enumerate
the read operations of the proposed sensing scheme with the proposed cross-coupled capacitive feedback technique on
the clamped circuity have successfully been performed a 2.5X reduction in average low power and a 13X increase in
average reading speed compared with the previous works due to its device structure and the proposed circuit technique.This work is part of a project that has received funding from the
European Union’s H2020 research and innovation programme under the
Marie Skłodowska-Curie grant agreement No 691178, and supported by the
TUBITAK-Career project #113E76