The ternary III-V semiconductor (Ga, Mn)As has recently drawn a lot of attention as the model diluted
ferromagnetic semiconductor, combining semiconducting properties with magnetism. (Ga, Mn)As layers
are usually gown by the low-temperature molecular-beam epitaxy (LT-MBE) technique. Below a magnetic
transition temperature, TC, substitutional Mn2+ ions are ferromagnetically ordered owing to interaction
with spin-polarized holes. However, the character of electronic states near the Fermi energy and the electronic
structure in ferromagnetic (Ga, Mn)As are still a matter of controversy. The photoreflectance (PR)
spectroscopy was applied to study the band-structure evolution in (Ga, Mn)As layers with increasing Mn
content. We have investigated thick (800-700 nm and 230-300 nm) (Ga, Mn)As layers with Mn content in
the wide range from 0.001 % to 6 % and, as a reference, undoped GaAs layer, grown by LT-MBE on semiinsulating
(001) GaAs substrates. Our findings were interpreted in terms of the model, which assumes that
the mobile holes residing in the valence band of ferromagnetic (Ga, Mn)As and the Fermi level position determined
by the concentration of valence-band holes.
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