In order to give a real understanding and realization of all the phenomena occurring inside the photovoltaic cell devices, the development of a reliable simulated model first is also essential. In this paper, a novel method for developing a realistic model of an efficient solar cell is presented. An efficient model of a Dual Junction InGaP/GaAs solar cell having GaAs tunnel diode is prepared and fully simulated using Silvaco
VWF/ATLAS code. An optimization of window layer, ARC, BSF etc are also performed incorporating the effect of some of the different parameters on the performance of this model. The major stages of the process are explained and the simulation results
are compared with published experimental data to demonstrate the accuracy of our results produced by the model utilizing this technique. For this optimized InGaP/GaAs Dual Junction cell model having 125 nm DLAR on 18 nm InAlP textured window
with effective 500 nm InAlGaP bottom BSF , a maximum conversion efficiency of 32.20 % (1 sun) and 36.67 % (1000 suns) is obtained under AM1.5G illumination. The introduction of this modeling technique to the photovoltaic community will prove
to be of great importance in aiding in the design and development of advanced solar cells using Silvaco Virtual Wafer Fabrication Tools.
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