1/f noise investigation was performed on n-GaN epitaxial layer grown on sapphire. The variation of spectral power density of voltage fluctuations density was observed as a function of frequency (100-50 Hz) and it showed the 1/f spectra. This type of
behavior was attributed to the presence of traps. The variation in spectral power density of voltage fluctuations with temperature was also observed with in the temperature range 80 K and 300 K and it was found to be slightly increasing with
temperature. It was attributed to the trapping-detrapping process of charge carriers by the defects. Four probe configuration was used for noise measurement and contacts
were made with indium. To check the stability and ohmic behavior of contacts, I-V measurements were performed with in the temperature range 80-325 K.
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