Abdukadirova, I.Kh.

Karimov, Yu.

Khaydarov, T.

SocioEconomic Challenges Journal (Sumy State University)

Nanomaterials: Applications and Properties (NAP-2011). Vol. 2, Part II                  389 
 
INVESTIGATION OF THE NANOSTRUCTURES FOR-
MATION IN THE IRRADIATED BY J – QUANTA SINGLE-
CRYSTAL SILICON WITH ULTRASONIC METHOD 
T. Khaydarov, I.Kh. Abdukadirova, Yu. Karimov* 
 
Institute of Nuclear Physics Academy of Sciences, Tashkent, 100214, Uzbekistan 
 
ABSTRACT 
It’s determined that a phasic  dynamics of deformation strengthening of single-
crystal silicon irradiated by Ȗ – quanta (with energy ~ 1,27 MeV) in the wide region of 
doses (from 102  up to 109 rad)  by the internal friction  measurement with widely known 
ultrasonic  resonance method. We have detected appearance maximum on the depend-
ence of internal friction (Q-1) from dose at 105 rad in the samples p- Si with density of 
dislocations more than 103 cm -2. Besides it the instability of nanodimensional disloca-
tion structures has been established in the doses interval from 106   up to 109 rad, due to 
the formation and accumulation in the crystal lattice of the point like and continuous  
radiation defects (evolution of the dislocation densities in metals with rise of defor-
mation were considered in [1-4]). On the temporal dependence Q-1(t) throughout 1,5 - 2 
hours after irradiation the maximum has been established which position depends from 
ionizing dose. At the increasing of the observation time after stopping of the sample 
irradiation it is observed a monotonic decrease of   Q-1(t) dependence, which is obvious-
ly connected with decreasing of the radiation defects densities in the result of their anni-
hilation. 
 
Key words: internal friction, density of dislocations, Si, radiation defects. 
 
INTRODUCTION 
A lot physical properties of materials are connected with their dislocated 
structure. It can be create a dislocated structure by plastic deformation or under 
influence of gamma irradiation [1].  Radiations damages are closely connected 
with dislocation strengthening. A mechanism of deformation strengthening and 
of formation fragmentary dislocation structures in the metals has been theoreti-
cally discussed in investigations [2, 3]. 
Although the processes of multiplication and of diffusion and of annihila-
tion of dislocation in the metals and semiconductors has been considered in [2, 
3, 5, 6, 7, 8], but main goal of majority investigations consist in possibility of 
analysis that effects from kinetics positions. 
However dynamic processes of dislocation and other radiations defects af-
ter interruption of irradiation of the materials still not clear. Such information 
                                               
* e-mail: yuri@inp.uz  tel: +(998)712893136 
390                  Nanomaterials: Applications and Properties (NAP-2011). Vol. 2, Part II           
 
allows us to predetermine about resource of the semiconducting material, and 
about character and staging of curves of deformation strengthening, and of 
specific structures at mechanical fatigue of crystals. The investigation of this 
process importantly not only from practical standpoint but also importantly 
from standpoint of the description of theory of this process. In this connection 
it’s interesting the investigation of dynamic of radiations defects in the semi-
conductor after stopping of influence of the radiation. 
METHODS AND OBJECTS OF INVESTIGATION 
Measurements of internal friction (Q-1) of the single-crystal silicon have 
been made with ultrasonic resonance method [9] before and after irradiation. 
The prismatic rods of dimensions 1ɯɯ35ɦɦ, 1,2ɯ4,1ɯ28,7ɦɦ ɢ 
ɯɯ20ɦɦ has used in the measurements. 
Ranges of value of intrinsic of the bending vibrations were varied from 20 
kHz to  200 kHz.  The  power  of  vibration  for  stimulation  of  the  specimen was  
approximately10mW. As initial specimens we used types KEF-100 and KDB-
10 of single crystal of silicon. 
The samples of silicon with density of dislocations more than 103 cm -2 
were selected for quantitative description of origin of defects in the silicon and 
their further evolution after irradiate of gamma-rays these samples. 
Method of fixing of sample is shown on insertion b (Fig.1). After irradia-
tion during 10 minutes the sample was set up between acoustic lines 1 and 3. 
From that time the measurement of the internal friction Q-1 was started. 
 
 
Fig. 1 – Dependence the internal friction of single-crystal of the silicon from the 
irradiation dose. Curve #1 is measured on frequency 149 kHz, curve #2 - 90 kHz. On 
insertions are shown:  a- typical dependence of the tension from of the deformation 
which demonstrate down up tension as result of the moving dislocation formation [12]. 
b - method of fixing of sample where 1 is transfer acoustic line and 3 – receive acoustic 
line, 2-sample 
Nanomaterials: Applications and Properties (NAP-2011). Vol. 2, Part II                  391 
 
RESULTS AND DISCUSSION 
Dependence Q-1 from the irradiation dose is shown on Fig.1. It’s can to 
divide on three regions: I-background where Q-1 essentially not changed with 
increase of the irradiation dose  (D) from 10 to 103 rad  ;  II-intermediate re-
gion where Q-1  was reached maximum with increase of D  to 105 rad ;  III-
region  where Q-1  was dropped down with increase of D from 106 ɞɨ 109 rad 
but after that again rise. 
 
 
On the temporal de-
pendence Q-1(t) (Fig.  2) 
throughout 1,5 - 2 hours 
after irradiation the max-
imum has been estab-
lished which position 
depends from ionizing 
dose. 
We suppose that 
such behavior of the Q-
1(t) function is connected 
with manifestation of 
migration activity which 
coherent with annihilation 
of the dislocation loops in 
the first 1,5-2 hours when 
it’s growing in 2,5 times starting from the initial  up  to the maximum value. At 
the increasing of the observation time after stopping of the sample irradiation it 
is observed a monotonic decrease of Q-1(t) dependence, which is obviously 
connected with decreasing of the radiation defects densities in the result of their 
annihilation. 
CONCLUSIONS 
It has been demonstrated in the present work that received dependences of 
internal friction (Q-1) from the irradiation doses have characterized the staging 
step of the deformation strengthening.  
We have detected appearance maximum on the dependence of internal 
friction (Q-1) from dose at 105 rad in the samples p-Si with density of disloca-
tions more than 103 cm-2. 
 
Acknowledgements 
The authors are thankful to Prof. M. Karimovu for important remark and 
R. Khamraevoy and Sh. Makhmudovu for concession of samples. This work 
was funded by project Ⱥ14-Ɏ070. 
 
Fig. 2 – Time dependence of the single-crystal silicon 
internal friction after stop of the irradiation action.(1) -
108 rad, (2) – initial sample 
392                  Nanomaterials: Applications and Properties (NAP-2011). Vol. 2, Part II           
 
REFERENCES 
[1] Physical  Acoustics,  Principles and Methods (Ed. W. Mason),  Vol.  III,  Part  A. The 
Effect of Imperfections, New-York, 1966, P. 578. 
[2] ȽȺ. Ɇɚɥɵɝɢɧ, ɍɎɇ, 1999, Vol. 169, P. 979-1010. 
[3] ȽȺ. Ɇɚɥɵɝɢɧ, ɎɌɌ, 2006, Vol. 48, P. 651-657. 
[4] ȽȺ. Ɇɚɥɵɝɢɧ, ɎɌɌ, 2009, Vol. 51. P. 1709-1715. 
[5] M.W. Tompson Defects and Radiation Damage in Metals, Cambridge, 1969. 
[6] L.J. Teutonico, A.V. Granato, K. Lucke, J. Appl. Phys., 1964, Vol. 35, P. 220-237. 
[7] Ȼɂ. ɋɦɢɪɧɨɜ, Ⱦɢɫɥɨɤɚɰɢɨɧɧɚɹ ɫɬɪɭɤɬɭɪɚ ɢ  ɭɩɪɨɱɧɟɧɢɟ ɤɪɢɫɬɚɥɥɨɜ. Ʌ.: 
ɇɚɭɤɚ, 1981. 
[8] ȺɊ. ȼɟɥɢɯɚɧɨɜ, ɎɌɉ, 2010, Vol. 44, P. 145-148. 
[9] ȼɆ. Ȼɚɪɚɧɨɜ, Ⱥɤɭɫɬɢɱɟɫɤɢɟɢɡɦɟɪɟɧɢɹɜɹɞɟɪɧɨɣɷɧɟɪɝɟɬɢɤɟ, Ɇ.: ɗɧɟɪɝɨɚɬɨ-
ɦɢɡɞɚɬ, 1990. 
[10] J.V. Sharp, Philos. Mag., 1967, Vol. 16, P. 77-96. 
[11] K.V. Ravi,  Imperfections and Impurities in Semiconductor Silicon, New-York – 
Toronto, 1981. 
[12] ɆȺ. Ʌɟɛɟɞɤɢɧ, ɅɊ. ȾɭɧɢɧȻɚɪɤɨɜɫɤɢɣ, ɀɗɌɎ, 1998, Vol. 113, P. 1816-1820. 
[13] L.J. Teutonico, A.V. Granato, K. Lucke, J. Appl. Phys., 1964, Vol. 35, P. 220-237. 
[14] ɂ. ɏɢɞɢɪɨɜ, Ⱦɂ. ɋɨɬɢɛɨɥɞɢɟɜ, ɋɁ. Ɂɚɣɧɨɛɢɞɞɢɧɨɜ, ɄɈ. Ȼɚɤɬɢɛɚɟɜ, ȾȺɇ 
ȺɇɊɍɡ, 2008, ʋ 6, P. 67-71. 
 
  


Investigation of the nanostructures formation in the irradiated by у - quanta single-crystal silicon with ultrasonic method

Electronic Sumy State University Institutional Repository

Nanomaterials: Applications and Properties (NAP-2011). Vol. 2, Part II                  389  INVESTIGATION OF THE NANOSTRUCTURES FOR-MATION IN THE IRRADIATED BY J – QUANTA SINGLE-CRYSTAL SILICON WITH ULTRASONIC METHOD T. Khaydarov, I.Kh. Abdukadirova, Yu. Karimov*  Institute of Nuclear Physics Academy of Sciences, Tashkent, 100214, Uzbekistan  ABSTRACT It’s determined that a phasic  dynamics of deformation strengthening of single-crystal silicon irradiated by Ȗ – quanta (with energy ~ 1,27 MeV) in the wide region of doses (from 102  up to 109 rad)  by the internal friction  measurement with widely known ultrasonic  resonance method. We have detected appearance maximum on the depend-ence of internal friction (Q-1) from dose at 105 rad in the samples p- Si with density of dislocations more than 103 cm -2. Besides it the instability of nanodimensional disloca-tion structures has been established in the doses interval from 106   up to 109 rad, due to the formation and accumulation in the crystal lattice of the point like and continuous  radiation defects (evolution of the dislocation densities in metals with rise of defor-mation were considered in [1-4]). On the temporal dependence Q-1(t) throughout 1,5 - 2 hours after irradiation the maximum has been established which position depends from ionizing dose. At the increasing of the observation time after stopping of the sample irradiation it is observed a monotonic decrease of   Q-1(t) dependence, which is obvious-ly connected with decreasing of the radiation defects densities in the result of their anni-hilation.  Key words: internal friction, density of dislocations, Si, radiation defects.  INTRODUCTION A lot physical properties of materials are connected with their dislocated structure. It can be create a dislocated structure by plastic deformation or under influence of gamma irradiation [1].  Radiations damages are closely connected with dislocation strengthening. A mechanism of deformation strengthening and of formation fragmentary dislocation structures in the metals has been theoreti-cally discussed in investigations [2, 3]. Although the processes of multiplication and of diffusion and of annihila-tion of dislocation in the metals and semiconductors has been considered in [2, 3, 5, 6, 7, 8], but main goal of majority investigations consist in possibility of analysis that effects from kinetics positions. However dynamic processes of dislocation and other radiations defects af-ter interruption of irradiation of the materials still not clear. Such information                                                * e-mail: yuri@inp.uz  tel: +(998)712893136 390                  Nanomaterials: Applications and Properties (NAP-2011). Vol. 2, Part II            allows us to predetermine about resource of the semiconducting material, and about character and staging of curves of deformation strengthening, and of specific structures at mechanical fatigue of crystals. The investigation of this process importantly not only from practical standpoint but also importantly from standpoint of the description of theory of this process. In this connection it’s interesting the investigation of dynamic of radiations defects in the semi-conductor after stopping of influence of the radiation. METHODS AND OBJECTS OF INVESTIGATION Measurements of internal friction (Q-1) of the single-crystal silicon have been made with ultrasonic resonance method [9] before and after irradiation. The prismatic rods of dimensions 1ɯɯ35ɦɦ, 1,2ɯ4,1ɯ28,7ɦɦ ɢ ɯɯ20ɦɦ has used in the measurements. Ranges of value of intrinsic of the bending vibrations were varied from 20 kHz to  200 kHz.  The  power  of  vibration  for  stimulation  of  the  specimen was  approximately10mW. As initial specimens we used types KEF-100 and KDB-10 of single crystal of silicon. The samples of silicon with density of dislocations more than 103 cm -2 were selected for quantitative description of origin of defects in the silicon and their further evolution after irradiate of gamma-rays these samples. Method of fixing of sample is shown on insertion b (Fig.1). After irradia-tion during 10 minutes the sample was set up between acoustic lines 1 and 3. From that time the measurement of the internal friction Q-1 was started.   Fig. 1 – Dependence the internal friction of single-crystal of the silicon from the irradiation dose. Curve #1 is measured on frequency 149 kHz, curve #2 - 90 kHz. On insertions are shown:  a- typical dependence of the tension from of the deformation which demonstrate down up tension as result of the moving dislocation formation [12]. b - method of fixing of sample where 1 is transfer acoustic line and 3 – receive acoustic line, 2-sample Nanomaterials: Applications and Properties (NAP-2011). Vol. 2, Part II                  391  RESULTS AND DISCUSSION Dependence Q-1 from the irradiation dose is shown on Fig.1. It’s can to divide on three regions: I-background where Q-1 essentially not changed with increase of the irradiation dose  (D) from 10 to 103 rad  ;  II-intermediate re-gion where Q-1  was reached maximum with increase of D  to 105 rad ;  III-region  where Q-1  was dropped down with increase of D from 106 ɞɨ 109 rad but after that again rise.   On the temporal de-pendence Q-1(t) (Fig.  2) throughout 1,5 - 2 hours after irradiation the max-imum has been estab-lished which position depends from ionizing dose. We suppose that such behavior of the Q-1(t) function is connected with manifestation of migration activity which coherent with annihilation of the dislocation loops in the first 1,5-2 hours when it’s growing in 2,5 times starting from the initial  up  to the maximum value. At the increasing of the observation time after stopping of the sample irradiation it is observed a monotonic decrease of Q-1(t) dependence, which is obviously connected with decreasing of the radiation defects densities in the result of their annihilation. CONCLUSIONS It has been demonstrated in the present work that received dependences of internal friction (Q-1) from the irradiation doses have characterized the staging step of the deformation strengthening.  We have detected appearance maximum on the dependence of internal friction (Q-1) from dose at 105 rad in the samples p-Si with density of disloca-tions more than 103 cm-2.  Acknowledgements The authors are thankful to Prof. M. Karimovu for important remark and R. Khamraevoy and Sh. Makhmudovu for concession of samples. This work was funded by project Ⱥ14-Ɏ070.  Fig. 2 – Time dependence of the single-crystal silicon internal friction after stop of the irradiation action.(1) -108 rad, (2) – initial sample 392                  Nanomaterials: Applications and Properties (NAP-2011). Vol. 2, Part II            REFERENCES [1] Physical  Acoustics,  Principles and Methods (Ed. W. Mason),  Vol.  III,  Part  A. The Effect of Imperfections, New-York, 1966, P. 578. [2] ȽȺ. Ɇɚɥɵɝɢɧ, ɍɎɇ, 1999, Vol. 169, P. 979-1010. [3] ȽȺ. Ɇɚɥɵɝɢɧ, ɎɌɌ, 2006, Vol. 48, P. 651-657. [4] ȽȺ. Ɇɚɥɵɝɢɧ, ɎɌɌ, 2009, Vol. 51. P. 1709-1715. [5] M.W. Tompson Defects and Radiation Damage in Metals, Cambridge, 1969. [6] L.J. Teutonico, A.V. Granato, K. Lucke, J. Appl. Phys., 1964, Vol. 35, P. 220-237. [7] Ȼɂ. ɋɦɢɪɧɨɜ, Ⱦɢɫɥɨɤɚɰɢɨɧɧɚɹ ɫɬɪɭɤɬɭɪɚ ɢ  ɭɩɪɨɱɧɟɧɢɟ ɤɪɢɫɬɚɥɥɨɜ. Ʌ.: ɇɚɭɤɚ, 1981. [8] ȺɊ. ȼɟɥɢɯɚɧɨɜ, ɎɌɉ, 2010, Vol. 44, P. 145-148. [9] ȼɆ. Ȼɚɪɚɧɨɜ, Ⱥɤɭɫɬɢɱɟɫɤɢɟɢɡɦɟɪɟɧɢɹɜɹɞɟɪɧɨɣɷɧɟɪɝɟɬɢɤɟ, Ɇ.: ɗɧɟɪɝɨɚɬɨ-ɦɢɡɞɚɬ, 1990. [10] J.V. Sharp, Philos. Mag., 1967, Vol. 16, P. 77-96. [11] K.V. Ravi,  Imperfections and Impurities in Semiconductor Silicon, New-York – Toronto, 1981. [12] ɆȺ. Ʌɟɛɟɞɤɢɧ, ɅɊ. ȾɭɧɢɧȻɚɪɤɨɜɫɤɢɣ, ɀɗɌɎ, 1998, Vol. 113, P. 1816-1820. [13] L.J. Teutonico, A.V. Granato, K. Lucke, J. Appl. Phys., 1964, Vol. 35, P. 220-237. [14] ɂ. ɏɢɞɢɪɨɜ, Ⱦɂ. ɋɨɬɢɛɨɥɞɢɟɜ, ɋɁ. Ɂɚɣɧɨɛɢɞɞɢɧɨɜ, ɄɈ. Ȼɚɤɬɢɛɚɟɜ, ȾȺɇ ȺɇɊɍɡ, 2008, ʋ 6, P. 67-71.    

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Investigation of the nanostructures formation in the irradiated by у - quanta single-crystal silicon with ultrasonic method

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