Optimisation of ex-situ annealing process for epitaxial silicon emitters via Hot Wire CVD

Abstract

A refined Hot Wire Chemical Vapour Deposition (HWCVD) process for fabricating boron doped silicon emitters using a shortened anneal time and temperature is presented. We are able to crystallise our grown films with a post-deposition annealing treatment of 2 minutes at 800°C, a significant improvement from previous work using several hours at 1000°C. Direct implications of higher annealing temperatures on the film quality is discussed. In addition, the potential for in situ annealing using a higher deposition temperature is presented, with future works aiming to find and apply the optimum deposition temperature for epitaxial silicon with HWCVD