Benkler, M.

Grether, E.

Hanemann, T.

Hobmaier, J.

Paul, F.

Schott, J.

English

KITopen

Ferroelectric Thin Film Fabrication by Direct UV-Lithography* Laboratory for Materials Processing, Department of Microsystems Engineering - IMTEK, University of Freiburg **  Material and Process Development, Institute for Applied Materials, Karlsruhe Institute of TechnologyM. Benkler *, E. Grether *, J. Hobmaier *,  J. Schott *, F. Paul *, T. Hanemann *,**Ferroelectric RAM (FRAM) devices (Fujitsu Semiconductor Europe)Used Materials:ferroelectric ceramics with perovskite structure: lead zirconate titanate PZT lead strontium titanate PST barium strontium titanate BST Ceramic film generation:Financial support by the state of Baden-Württemberg,”Ministerium für Wissenschaft, Forschung und Kunst“ within the graduate school ”Generierungsmechanismen von         Mikrostrukturen (GenMik)” is gratefully acknowledged.Acknowledgement:Motivation:• ferroelectric films are widely used in the fields of sensors, actuators, capacitors and FRAMs• currently used deposition methods need an additional patterning process step• direct patterning of ceramic films byUV-lithography combines deposition and patterningeasy, cheap and cleanroom compatible alternativeSol synthesis:Results:• micro structured, crack free ceramic thin films• low defect concentration• polycrystalline and fine grained• maximum lateral resolution 1-2 µm• thickness 30-150 nm • simple sol synthesis• sols can be processed like commercial photoresistsDielectric measurements:Polarization vs. voltage shows hysteresis behaviorproof of ferroelectric properties of the ceramic films

Ferroelectric thin film fabrication by direct UV-lithography

https://publikationen.bibliothek.kit.edu/220096983/3816600

Ferroelectric thin film fabrication by direct UV-lithography

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